Abstract: A semiconductor device includes first and second semiconductor fins extending from a substrate and a source/drain region epitaxially grown in recesses of the first and second semiconductor fins. A top surface of the source/drain region is higher than a surface level with top surfaces of the first and second semiconductor fins. The source/drain region includes a plurality of buffer layers. Respective layers of the plurality of buffer layers are embedded between respective layers of the source/drain region.

Abstract: A semiconductor device includes a substrate having a magnetic tunneling junction (MTJ) region and a logic region, a magnetic tunneling junction (MTJ) on the MTJ region and a first metal interconnection on the MTJ. Preferably, a top view of the MTJ includes a circle and a top view of the first metal interconnection includes an ellipse overlapping the circle.

Abstract: A substrate structure with invisible inner electrode patterns is provided. The substrate structure includes a substrate, an electrode pattern, a first laminated structure, and a passivation layer. The electrode pattern is disposed on the substrate. The first laminated structure is disposed on the electrode pattern, in which the first laminated structure includes a first upper layer, a second upper layer, and a third upper layer. The first upper layer is adjoined to the electrode pattern and the substrate. The first upper layer, the second upper layer, and the third upper layer are stacked sequentially. The passivation layer is disposed on the first laminated structure. The refractive indexes of the electrode pattern, the first upper layer, the second upper layer, the third upper layer, and the passivation layer are decreased sequentially.

Abstract: A substrate structure with invisible inner electrode patterns is provided. The substrate structure includes a substrate, an electrode pattern, a first laminated structure, and a passivation layer. The electrode pattern is disposed on the substrate. The first laminated structure is disposed on the electrode pattern, in which the first laminated structure includes a first upper layer, a second upper layer, and a third upper layer. The first upper layer is adjoined to the electrode pattern and the substrate. The first upper layer, the second upper layer, and the third upper layer are stacked sequentially. The passivation layer is disposed on the first laminated structure. The refractive indexes of the electrode pattern, the first upper layer, the second upper layer, the third upper layer, and the passivation layer are decreased sequentially.