Patents by Inventor Ting-Hsun CHANG
Ting-Hsun CHANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230364733Abstract: A chemical mechanical planarization apparatus includes a multi-zone platen comprising a plurality of individually controlled concentric toroids. The rotation direction, rotation speed, applied force, relative height, and temperature of each concentric toroid is individually controlled. Concentric polishing pads are affixed to an upper surface of each of the individually controlled concentric toroids. The chemical mechanical planarization apparatus includes a single central slurry source or includes individual slurry sources for each individually controlled concentric toroid.Type: ApplicationFiled: July 26, 2023Publication date: November 16, 2023Inventors: Ting-Hsun Chang, Hung Yen, Chi-Hsiang Shen, Fu-Ming Huang, Chun-Chieh Lin, Tsung Hsien Chang, Ji Cui, Liang-Guang Chen, Chih Hung Chen, Kei-Wei Chen
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Patent number: 11772228Abstract: A chemical mechanical planarization apparatus includes a multi-zone platen comprising a plurality of individually controlled concentric toroids. The rotation direction, rotation speed, applied force, relative height, and temperature of each concentric toroid is individually controlled. Concentric polishing pads are affixed to an upper surface of each of the individually controlled concentric toroids. The chemical mechanical planarization apparatus includes a single central slurry source or includes individual slurry sources for each individually controlled concentric toroid.Type: GrantFiled: January 17, 2020Date of Patent: October 3, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Ting-Hsun Chang, Hung Yen, Chi-Hsiang Shen, Fu-Ming Huang, Chun-Chieh Lin, Tsung Hsien Chang, Ji Cui, Liang-Guang Chen, Chih Hung Chen, Kei-Wei Chen
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Publication number: 20230271298Abstract: A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.Type: ApplicationFiled: May 5, 2023Publication date: August 31, 2023Inventors: Michael Yen, Kao-Feng Liao, Hsin-Ying Ho, Chun-Wen Hsiao, Sheng-Chao Chuang, Ting-Hsun Chang, Fu-Ming Huang, Chun-Chieh Lin, Peng-Chung Jangjian, Ji James Cui, Liang-Guang Chen, Chih Hung Chen, Kei-Wei Chen
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Patent number: 11679469Abstract: A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.Type: GrantFiled: August 23, 2019Date of Patent: June 20, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Michael Yen, Kao-Feng Liao, Hsin-Ying Ho, Chun-Wen Hsiao, Sheng-Chao Chuang, Ting-Hsun Chang, Fu-Ming Huang, Chun-Chieh Lin, Peng-Chung Jangjian, Ji James Cui, Liang-Guang Chen, Chih Hung Chen, Kei-Wei Chen
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Patent number: 11658065Abstract: A method for CMP includes following operations. A metal layer is received. A CMP slurry composition is provided in a CMP apparatus. The CMP slurry composition includes at least a first oxidizer and a second oxidizer different from each other. The first oxidizer is oxidized to form a peroxidant by the second oxidizer. A portion of the metal layer is oxidized to form a first metal oxide by the peroxidant. The first metal oxide is re-oxidized to form a second metal oxide by the second oxidizer.Type: GrantFiled: June 15, 2020Date of Patent: May 23, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Ji Cui, Fu-Ming Huang, Ting-Kui Chang, Tang-Kuei Chang, Chun-Chieh Lin, Wei-Wei Liang, Chi-Hsiang Shen, Ting-Hsun Chang, Li-Chieh Wu, Hung Yen, Chi-Jen Liu, Liang-Guang Chen, Kei-Wei Chen
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Publication number: 20230082084Abstract: A method for CMP includes following operations. A metal stack is received. The metal layer stack includes at least a first metal layer and a second metal layer, and a top surface of the first metal layer and a top surface of the second metal layer are exposed. A protecting layer is formed over the second metal layer. A portion of the first metal layer is etched. The protecting layer protects the second metal layer during the etching of the portion of the first metal layer. A top surface of the etched first metal layer is lower than a top surface of the protecting layer. The protecting layer is removed from the second metal layer.Type: ApplicationFiled: November 21, 2022Publication date: March 16, 2023Inventors: JI CUI, FU-MING HUANG, TING-KUI CHANG, TANG-KUEI CHANG, CHUN-CHIEH LIN, WEI-WEI LIANG, LIANG-GUANG CHEN, KEI-WEI CHEN, HUNG YEN, TING-HSUN CHANG, CHI-HSIANG SHEN, LI-CHIEH WU, CHI-JEN LIU
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Publication number: 20230064918Abstract: A slurry composition, a semiconductor structure and a method for forming a semiconductor structure are provided. The slurry composition includes a slurry and a precipitant dispensed in the slurry. The semiconductor structure comprises a blocking layer including at least one element of the precipitant. The method includes using the slurry composition with the precipitant to polish a conductive layer and causing the precipitant to flow into the gap.Type: ApplicationFiled: August 30, 2021Publication date: March 2, 2023Inventors: CHUN-WEI HSU, CHIH-CHIEH CHANG, YI-SHENG LIN, JIAN-CI LIN, JENG-CHI LIN, TING-HSUN CHANG, LIANG-GUANG CHEN, JI CUI, KEI-WEI CHEN, CHI-JEN LIU
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Patent number: 11508585Abstract: A method for CMP includes following operations. A dielectric structure is received. The dielectric structure includes a metal layer stack formed therein. The metal layer stack includes at least a first metal layer and a second metal layer, and the first metal layer and the second metal layer are exposed through a surface of the dielectric structure. A first composition is provided to remove a portion of the first metal layer from the surface of the dielectric structure. A second composition is provided to form a protecting layer over the second metal layer. The protecting layer is removed from the second metal layer. A CMP operation is performed to remove a portion of the second metal layer. In some embodiments, the protecting layer protects the second metal layer during the removal of the portion of the first metal layer.Type: GrantFiled: June 15, 2020Date of Patent: November 22, 2022Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Ji Cui, Fu-Ming Huang, Ting-Kui Chang, Tang-Kuei Chang, Chun-Chieh Lin, Wei-Wei Liang, Liang-Guang Chen, Kei-Wei Chen, Hung Yen, Ting-Hsun Chang, Chi-Hsiang Shen, Li-Chieh Wu, Chi-Jen Liu
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Publication number: 20220017780Abstract: A slurry composition, a polishing method and an integrated circuit are provided. The slurry composition includes a slurry and at least one cationic surfactant having at least one nitrogen atom in the molecule. The slurry includes at least one liquid carrier, at least one abrasive and at least one pH adjusting agent, and has a pH of less than 7.0. The polishing method includes using the slurry composition with the cationic surfactant to polish a conductive layer. The integrated circuit comprises a block layer comprising the cationic surfactant between a sidewall of the conductive plug and an interlayer dielectric layer.Type: ApplicationFiled: November 24, 2020Publication date: January 20, 2022Inventors: JI CUI, CHI-JEN LIU, CHIH-CHIEH CHANG, KAO-FENG LIAO, PENG-CHUNG JANGJIAN, CHUN-WEI HSU, TING-HSUN CHANG, LIANG-GUANG CHEN, KEI-WEI CHEN, HUI-CHI HUANG
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Publication number: 20210391186Abstract: A method for CMP includes following operations. A dielectric structure is received. The dielectric structure includes a metal layer stack formed therein. The metal layer stack includes at least a first metal layer and a second metal layer, and the first metal layer and the second metal layer are exposed through a surface of the dielectric structure. A first composition is provided to remove a portion of the first metal layer from the surface of the dielectric structure. A second composition is provided to form a protecting layer over the second metal layer. The protecting layer is removed from the second metal layer. A CMP operation is performed to remove a portion of the second metal layer. In some embodiments, the protecting layer protects the second metal layer during the removal of the portion of the first metal layer.Type: ApplicationFiled: June 15, 2020Publication date: December 16, 2021Inventors: Ji Cui, Fu-Ming Huang, Ting-Kui Chang, Tang-Kuei Chang, Chun-Chieh Lin, Wei-Wei Liang, Liang-Guang Chen, Kei-Wei Chen, Hung Yen, Ting-Hsun Chang, Chi-Hsiang Shen, Li-Chieh Wu, Chi-Jen Liu
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Publication number: 20210391208Abstract: A method for CMP includes following operations. A metal layer is received. A CMP slurry composition is provided in a CMP apparatus. The CMP slurry composition includes at least a first oxidizer and a second oxidizer different from each other. The first oxidizer is oxidized to form a peroxidant by the second oxidizer. A portion of the metal layer is oxidized to form a first metal oxide by the peroxidant. The first metal oxide is re-oxidized to form a second metal oxide by the second oxidizer.Type: ApplicationFiled: June 15, 2020Publication date: December 16, 2021Inventors: Ji Cui, Fu-Ming Huang, Ting-Kui Chang, Tang-Kuei Chang, Chun-Chieh Lin, Wei-Wei Liang, Chi-Hsiang Shen, Ting-Hsun Chang, Li-Chieh Wu, Hung Yen, Chi-Jen Liu, Liang-Guang Chen, Kei-Wei Chen
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Patent number: 11121028Abstract: Semiconductor devices and methods of forming are provided. In some embodiments the semiconductor device includes a substrate, and a dielectric layer over the substrate. A first conductive feature is included in the dielectric layer, the first conductive feature comprising a first number of material layers. A second conductive feature is included in the dielectric layer, the second conductive feature comprising a second number of material layers, where the second number is higher than the first number. A first electrical connector is included overlying the first conductive feature.Type: GrantFiled: September 13, 2019Date of Patent: September 14, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Wei Hsu, Ling-Fu Nieh, Pinlei Edmund Chu, Chi-Jen Liu, Yi-Sheng Lin, Ting-Hsun Chang, Chia-Wei Ho, Liang-Guang Chen
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Publication number: 20210220964Abstract: A chemical mechanical planarization apparatus includes a multi-zone platen comprising a plurality of individually controlled concentric toroids. The rotation direction, rotation speed, applied force, relative height, and temperature of each concentric toroid is individually controlled. Concentric polishing pads are affixed to an upper surface of each of the individually controlled concentric toroids. The chemical mechanical planarization apparatus includes a single central slurry source or includes individual slurry sources for each individually controlled concentric toroid.Type: ApplicationFiled: January 17, 2020Publication date: July 22, 2021Inventors: Ting-Hsun Chang, Hung Yen, Chi-Hsiang Shen, Fu-Ming Huang, Chun-Chieh Lin, Tsung Hsien Chang, Ji Cui, Liang-Guang Chen, Chih Hung Chen, Kei-Wei Chen
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Publication number: 20210053180Abstract: A chemical mechanical planarization (CMP) tool includes a platen and a polishing pad attached to the platen, where a first surface of the polishing pad facing away from the platen includes a first polishing zone and a second polishing zone, where the first polishing zone is a circular region at a center of the first surface of the polishing pad, and the second polishing zone is an annular region around the first polishing zone, where the first polishing zone and the second polishing zone have different surface properties.Type: ApplicationFiled: August 23, 2019Publication date: February 25, 2021Inventors: Michael Yen, Kao-Feng Liao, Hsin-Ying Ho, Chun-Wen Hsiao, Sheng-Chao Chuang, Ting-Hsun Chang, Fu-Ming Huang, Chun-Chieh Lin, Peng-Chung Jangjian, Ji James Cui, Liang-Guang Chen, Chih Hung Chen, Kei-Wei Chen
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Patent number: 10636701Abstract: Semiconductor devices and methods of forming are provided. In some embodiments the method includes forming a dielectric layer over a substrate and patterning the dielectric layer to form a first recess. The method may also include depositing a first layer in the first recess and depositing a second layer over the first layer, the second layer being different than the first layer. The method may also include performing a first chemical mechanical polish (CMP) process on the second layer using a first oxidizer and performing a second CMP process on remaining portions of the second layer and the first layer using the first oxidizer. The method may also include forming a first conductive element over the remaining portions of the first layer after the second CMP polish is performed.Type: GrantFiled: March 29, 2018Date of Patent: April 28, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Chun-Wei Hsu, Ling-Fu Nieh, Pinlei Edmund Chu, Chi-Jen Liu, Yi-Sheng Lin, Ting-Hsun Chang, Chia-Wei Ho, Liang-Guang Chen
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Publication number: 20200006125Abstract: Semiconductor devices and methods of forming are provided. In some embodiments the semiconductor device includes a substrate, and a dielectric layer over the substrate. A first conductive feature is included in the dielectric layer, the first conductive feature comprising a first number of material layers. A second conductive feature is included in the dielectric layer, the second conductive feature comprising a second number of material layers, where the second number is higher than the first number. A first electrical connector is included overlying the first conductive feature.Type: ApplicationFiled: September 13, 2019Publication date: January 2, 2020Inventors: Chun-Wei Hsu, Ling-Fu Nieh, Pinlei Edmund Chu, Chi-Jen Liu, Yi-Sheng Lin, Ting-Hsun Chang, Chia-Wei Ho, Liang-Guang Chen
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Publication number: 20190103308Abstract: Semiconductor devices and methods of forming are provided. In some embodiments the method includes forming a dielectric layer over a substrate and patterning the dielectric layer to form a first recess. The method may also include depositing a first layer in the first recess and depositing a second layer over the first layer, the second layer being different than the first layer. The method may also include performing a first chemical mechanical polish (CMP) process on the second layer using a first oxidizer and performing a second CMP process on remaining portions of the second layer and the first layer using the first oxidizer. The method may also include forming a first conductive element over the remaining portions of the first layer after the second CMP polish is performed.Type: ApplicationFiled: March 29, 2018Publication date: April 4, 2019Inventors: Chun-Wei Hsu, Ling-Fu Nieh, Pinlei Edmund Chu, Chi-Jen Liu, Yi-Sheng Lin, Ting-Hsun Chang, Chia-Wei Ho, Liang-Guang Chen
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Publication number: 20140161550Abstract: A micro-drill and a method for manufacturing the same are disclosed. The micro-drill comprises: a substrate having a surface, an ultra-nanocrystalline diamond film including a plurality of ultra-nanocrystalline diamond grains, which is formed on the surface of the substrate; wherein the substrate is a tungsten carbide substrate and a size of each ultra-nanocrystalline diamond grain is in a range from 1 to 30 nm.Type: ApplicationFiled: December 10, 2013Publication date: June 12, 2014Applicant: National Tsing Hua UniversityInventors: Nyan-Hwa TAI, Ting-Hsun CHANG