Patents by Inventor Ting-Jen HSUEH

Ting-Jen HSUEH has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10656129
    Abstract: The present invention provides a miniature gas sensor, which comprises a gas sensor chip. The gas sensor chip includes a hollow structure on the back. An insulating layer is disposed below the sensing material. A miniature heating device is disposed surrounding the sensing material. The sensing material is adhered to the sensing electrodes. The sensing material includes two metal oxide semiconductors or a compound structure of the sensing layer having a metal oxide semiconductor and a reaction layer with a rough surface. An interface layer is sandwiched between the two metal oxide layers for increasing the efficiency in sensing gas. The gas sensor according to the present invention can be implemented on silicon substrate with hollow structures. In addition, the size of the chip can be miniaturized.
    Type: Grant
    Filed: December 11, 2017
    Date of Patent: May 19, 2020
    Assignee: NATIONAL APPLIED RESEARCH LABORATORIES
    Inventors: Ting-Jen Hsueh, Yu-Jen Hsiao, Yu-Te Lin, Yen-Hsi Li, Yung-Hsiang Chen, Jia-Min Shieh
  • Patent number: 10533962
    Abstract: The present invention provides a gas sensor structure comprising a gas sensing chip. The back of the sensing material is a hollow structure. An insulating layer is below the sensing material. A micro heating is disposed surrounding the sensing material. The sensing material adheres to sensing electrodes. The sensing material is a complex structure including a metal oxide semiconductor and a roughened lanthanum-carbonate gas sensing layer. The thickness of the metal oxide semiconductor is between 0.2 ?m and 10 ?m; the thickness of the roughened lanthanum-carbonate gas sensing layer is between 0.1 ?m and 4 ?m; and the size of the back etching holes is smaller than 1*1 mm. By using the gas sensor structure according to the present invention, a suspended gas sensing structure can be fabricated on a silicon substrate and the chip size can be minimized.
    Type: Grant
    Filed: December 6, 2016
    Date of Patent: January 14, 2020
    Assignee: National Applied Research Laboratories
    Inventors: Yu-Jen Hsiao, Ting-Jen Hsueh, Yu-Te Lin, Yen-Hsi Li, Jia-Min Shieh, Chien-Wei Liu, Chi-Wei Chiang
  • Publication number: 20190178860
    Abstract: The present invention provides a miniature gas sensor, which comprises a gas sensor chip. The gas sensor chip includes a hollow structure on the back. An insulating layer is disposed below the sensing material. A miniature heating device is disposed surrounding the sensing material. The sensing material is adhered to the sensing electrodes. The sensing material includes two metal oxide semiconductors or a compound structure of the sensing layer having a metal oxide semiconductor and a reaction layer with a rough surface. An interface layer is sandwiched between the two metal oxide layers for increasing the efficiency in sensing gas. The gas sensor according to the present invention can be implemented on silicon substrate with hollow structures. In addition, the size of the chip can be miniaturized.
    Type: Application
    Filed: December 11, 2017
    Publication date: June 13, 2019
    Inventors: TING-JEN HSUEH, YU-JEN HSIAO, YU-TE LIN, YEN-HSI LI, YUNG-HSIANG CHEN, JIA-MIN SHIEH
  • Publication number: 20180038816
    Abstract: The present invention provides a gas sensor structure comprising a gas sensing chip. The back of the sensing material is a hollow structure. An insulating layer is below the sensing material. A micro heating is disposed surrounding the sensing material. The sensing material adheres to sensing electrodes. The sensing material is a complex structure including a metal oxide semiconductor and a roughened lanthanum-carbonate gas sensing layer. The thickness of the metal oxide semiconductor is between 0.2 ?m and 10 ?m; the thickness of the roughened lanthanum-carbonate gas sensing layer is between 0.1 ?m and 4 ?m; and the size of the back etching holes is smaller than 1*1 mm. By using the gas sensor structure according to the present invention, a suspended gas sensing structure can be fabricated on a silicon substrate and the chip size can be minimized.
    Type: Application
    Filed: December 6, 2016
    Publication date: February 8, 2018
    Inventors: YU-JEN HSIAO, TING-JEN HSUEH, YU-TE LIN, YEN-HSI LI, JIA-MIN SHIEH, CHIEN-WEI LIU, CHI-WEI CHIANG
  • Publication number: 20140008726
    Abstract: A semiconductor structure fabricating method includes the following steps. Firstly, a silicon substrate is provided. The silicon substrate has a first surface and a second surface. In addition, a first semiconductor structure is formed on the first surface of the silicon substrate. Then, the second surface of the silicon substrate is textured as a rough surface. Then, a first electrode layer is formed on the rough surface.
    Type: Application
    Filed: July 4, 2012
    Publication date: January 9, 2014
    Inventors: Yu-Jen HSIAO, Ting-Jen HSUEH, Jia-Min SHIEH, Yu-Ming YEH, Chee-Wee LIU, Bau-Tong DAI, Fu-Liang YANG