Abstract: A color tunable optical device electrically connects to a driving power source, and includes a first polarizer, a liquid crystal layer, a phase retarder and a second polarizer. The first polarizer converts a first mixed light into a first polarized mixed light. The liquid crystal layer is located behind the first polarizer and electrically connected to the driving power source for changing an arrangement direction of liquid crystal cells of the liquid crystal layer, and receives the first polarized mixed light. The phase retarder is located behind the liquid crystal layer to generate a second polarized mixed light. The second polarizer is located behind the phase retarder, and a second mixed light is generated by changing an incident angle of the second polarized mixed light incident on the second polarize, wherein a color of the second mixed light is different from that of the first mixed light.

Abstract: A message pushing method, a storage medium, and a server are disclosed in this disclosure, belonging to the field of Internet of Vehicles. The method includes: obtaining basic data associated with a target vehicle; recognizing a current scene of the target vehicle based on the basic data to obtain a scene recognition result; determining, according to the scene recognition result, at least one recommended service for the target vehicle; generating a service message of the at least one recommended service; and pushing the service message to the target vehicle.

Abstract: An execution method for convolution computation is disclosed, which includes: dividing an input image of N channels into a first tile to an X-th tile according to a feature tile; sequentially performing convolution computations on the data in the first tile to the X-th tile of the input image of the N channels, and storing the computation results as output data; mapping the data in each of the tiles by a kernel, and performing multiply-accumulate operations on the mapped data in each of the tiles, wherein each time the multiply-accumulate operation performed on the data mapped by the kernel is complete, the kernel is shifted to change the mapped data in said tile, and multiply-accumulate operation is performed on the changed mapped data until the multiply-accumulate operations performed on all of the data in said tile are complete, thereby finishing the convolution computation of said tile.

Abstract: A message pushing method, a storage medium, and a server are disclosed in this disclosure, belonging to the field of Internet of Vehicles. The method includes: obtaining basic data associated with a target vehicle; recognizing a current scene of the target vehicle based on the basic data to obtain a scene recognition result; determining, according to the scene recognition result, at least one recommended service for the target vehicle; generating a service message of the at least one recommended service; and pushing the service message to the target vehicle.

Abstract: A one-time programmable memory device includes a well of a first polarity in a semiconductor substrate. A lightly-doped drain (LDD) region is above one portion of the well. The LDD region has a first doping concentration and a second polarity that is opposite the first polarity. A source region or a drain region of the second polarity is above another portion of the well. The source region or the drain region has a second doping concentration that is higher than the first doping concentration. A first breakdown voltage between the LDD region and the well region is higher than a second breakdown voltage between the source region or the drain region and the well region. A select device is positioned at least partially above a portion of the source region or the drain region. The select device is configured to form a channel between the source region or the drain region and the LDD region. An anti-fuse device is positioned at least partially above a portion of the LDD region.

Abstract: A method for playing interactive games via a portable apparatus is disclosed. The method is applied to a portable apparatus. The method includes: transmitting a location signal; receiving location signals transmitted from other portable apparatuses; receiving a shooting signal; and determining a game status based on the shooting signal.

Abstract: An OTP memory device includes a first and a second doped region of the same polarity in a semiconductor substrate. The second doped region has a higher doping concentration than the first doped region. A source region and a drain region of an opposite polarity are also in the semiconductor substrate. The source is positioned over the lower doped region, and the drain is positioned over the higher doped region. A plurality of anti-fuse devices, separated from each other by a portion of the lower doped region, are each positioned at least partially above a respective portion of the source region (and, in turn, above the lower doped region). A first metal line is coupled to a first subset of the anti-fuse devices, and a second metal line is coupled to a different, second subset of the anti-fuse devices arranged between the anti-fuses in the first subset.

Abstract: A one-time programmable memory device includes a well of a first polarity in a semiconductor substrate. A lightly-doped drain (LDD) region is above one portion of the well. The LDD region has a first doping concentration and a second polarity that is opposite the first polarity. A source region or a drain region of the second polarity is above another portion of the well. The source region or the drain region has a second doping concentration that is higher than the first doping concentration. A first breakdown voltage between the LDD region and the well region is higher than a second breakdown voltage between the source region or the drain region and the well region. A select device is positioned at least partially above a portion of the source region or the drain region. The select device is configured to form a channel between the source region or the drain region and the LDD region. An anti-fuse device is positioned at least partially above a portion of the LDD region.

Abstract: An OTP memory device includes a first and a second doped region of the same polarity in a semiconductor substrate. The second doped region has a higher doping concentration than the first doped region. A source region and a drain region of an opposite polarity are also in the semiconductor substrate. The source is positioned over the lower doped region, and the drain is positioned over the higher doped region. A plurality of anti-fuse devices, separated from each other by a portion of the lower doped region, are each positioned at least partially above a respective portion of the source region (and, in turn, above the lower doped region). A first metal line is coupled to a first subset of the anti-fuse devices, and a second metal line is coupled to a different, second subset of the anti-fuse devices arranged between the anti-fuses in the first subset.

Abstract: A method for playing interactive games via a portable apparatus is disclosed. The method is applied to a portable apparatus. The method includes: transmitting a location signal; receiving location signals transmitted from other portable apparatuses; receiving a shooting signal; and determining a game status based on the shooting signal.

Abstract: A method for manufacturing a junction plane of a solar cell through an aluminum induced crystallization method includes steps of: providing a substrate; forming an aluminum film layer on a surface of a first growth area on a back side of the substrate; forming an N-type amorphous silicon layer on a surface of the aluminum film layer and a surface of a second growth area on the back side of the substrate; performing a thermal treatment to allow aluminum to induce the N-type amorphous silicon layer to crystallize and form a P-type polycrystalline silicon layer, such that positions of the aluminum film layer and the P-type polycrystalline silicon layer are switched due to the thermal treatment to allow the P-type polycrystalline silicon layer to be formed between the aluminum film layer and the substrate to form a PN junction plane with the N-type amorphous silicon layer.

Abstract: A toothbrush comprises: a main body including a handle wall portion defining a rear passage portion, and formed with an elongate slot, the slot being in spatial communication with the rear passage portion; a toothpaste material received in the handle wall portion; and a driving member extending through the slot into the handle wall portion. The driving member is slidable along the slot so that the toothpaste material is moved forwardly onto a bristle mounting surface along the rear passage portion.

Abstract: A method of forming an NMOS device with reduced device degradation, generated during a constant current stress, has been developed. The reduced device degradation is attributed to the use of a high temperature oxide (HTO), layer, used as an underlying component of composite insulator spacers, formed on the sides of the NMOS gate structures. After definition of an insulator capped polycide gate structure a thin, (140 to 160 Angstrom), HTO layer is deposited at a temperature between about 700 to 800° C., followed by the deposition of a silicon nitride layer. Definition of the composite insulator layer, comprised with the underlying, HTO, results in NMOS devices with reduced drain current and reduced transconductance values, when compared to counterparts fabricated with composite insulator spacers formed without the thin, HTO layer featured in this invention.