Abstract: A graph neural network to predict net parasitics and device parameters by transforming circuit schematics into heterogeneous graphs and performing predictions on the graphs. The system may achieve an improved prediction rate and reduce simulation errors.

Abstract: An electrostatic discharge protection circuit is disclosed. It comprises a stacked drain-ballasted NMOS devices structure and a gate bias circuit. The gate bias circuit includes an inverter, a first gate bias output terminal, and a second gate bias output terminal. The first gate bias output terminal is coupled to a gate of a first one of the drain-ballasted NMOS devices. The second gate bias output terminal runs from an output of the inverter to a gate of a second one of the drain-ballasted NMOS devices.

Abstract: In various embodiments, a comparison circuit compares voltages within an integrated circuit. The comparison circuit includes a comparison capacitor, an inverter, and multiple switches. A first terminal of the comparison capacitor is coupled to both a first terminal of a first switch and a first terminal of a second switch. A second terminal of the comparison capacitor is coupled to both a first terminal of a third switch and an input of the inverter. An output of the inverter is coupled to both a second terminal of the third switch and a first terminal of a fourth switch. A second terminal of the fourth switch is coupled to a first terminal of a fifth switch and a first output of the comparison circuit. At least a portion of the switches are turned on during a comparison model and are turned off during a reset mode.

Abstract: In various embodiments, a comparison circuit compares voltages within an integrated circuit. The comparison circuit includes a comparison capacitor, an inverter, and multiple switches. A first terminal of the comparison capacitor is coupled to both a first terminal of a first switch and a first terminal of a second switch. A second terminal of the comparison capacitor is coupled to both a first terminal of a third switch and an input of the inverter. An output of the inverter is coupled to both a second terminal of the third switch and a first terminal of a fourth switch. A second terminal of the fourth switch is coupled to a first terminal of a fifth switch and a first output of the comparison circuit. At least a portion of the switches are turned on during a comparison model and are turned off during a reset mode.

Abstract: A graph neural network to predict net parasitics and device parameters by transforming circuit schematics into heterogeneous graphs and performing predictions on the graphs. The system may achieve an improved prediction rate and reduce simulation errors.

Abstract: A graph neural network to predict net parasitics and device parameters by transforming circuit schematics into heterogeneous graphs and performing predictions on the graphs. The system may achieve an improved prediction rate and reduce simulation errors.

Abstract: In various embodiments, a current measurement circuit measures an input current within an integrated circuit. The current measurement circuit includes an integration capacitor, an operational amplifier, a comparison capacitor, an inverter, and multiple switches. The current measurement circuit is coupled to a clocking circuit that, during operation, generates a two-phase clock having a frequency that is proportional to the input current. At least a portion of the switches are turned on during a first phase of the two-phase clock and are turned off during a second phase of the two-phase clock.

Abstract: An electrostatic discharge protection circuit is disclosed. It comprises a stacked drain-ballasted NMOS devices structure and a gate bias circuit. The gate bias circuit includes an inverter, a first gate bias output terminal, and a second gate bias output terminal. The first gate bias output terminal is coupled to a gate of a first one of the drain-ballasted NMOS devices. The second gate bias output terminal runs from an output of the inverter to a gate of a second one of the drain-ballasted NMOS devices.

Abstract: A graph neural network to predict net parasitics and device parameters by transforming circuit schematics into heterogeneous graphs and performing predictions on the graphs. The system may achieve an improved prediction rate and reduce simulation errors.

Abstract: A system and method for calibrating an integrated circuit. The method includes configuring a first impedance for a first output of the integrated circuit according to a first configuration code and measuring a first voltage at the first output which corresponds to the first configuration code. The method further includes configuring a second impedance for a second output of the integrated circuit according to a second configuration code and measuring a second voltage at the second output which corresponds to the second configuration code. A determination of which of the first voltage and the second voltage is nearest to a predetermined voltage value. Based on the voltage determination, the integrated circuit is configured according a code of said first and second codes that corresponds to the voltage nearest to the predetermined voltage.

Abstract: A system and method for calibrating an integrated circuit. The method includes configuring a first impedance for a first output of the integrated circuit according to a first configuration code and measuring a first voltage at the first output which corresponds to the first configuration code. The method further includes configuring a second impedance for a second output of the integrated circuit according to a second configuration code and measuring a second voltage at the second output which corresponds to the second configuration code. A determination of which of the first voltage and the second voltage is nearest to a predetermined voltage value. Based on the voltage determination, the integrated circuit is configured according a code of said first and second codes that corresponds to the voltage nearest to the predetermined voltage.

Abstract: Embodiments of methods, apparatuses, systems and/or devices associated with a bus termination scheme are disclosed.

Abstract: Embodiments of methods, apparatuses, systems and/or devices associated with a bus termination scheme are disclosed.