Patents by Inventor Ting L. Chu

Ting L. Chu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 4792460
    Abstract: A process is provided for forming high purity polysilanes or polygermanes by electric discharge wherein the monosilane or monogermane is provided in a gaseous mixture with a carrier gas at atmospheric pressure. The polysilanes or polygermanes produced at atmospheric pressure are further deposited by various means onto a substrate as hydrogenated amorphous silicon or germanium. The polysilane may also be used for the deposition of hydrogenated amorphous silicon alloys.
    Type: Grant
    Filed: July 15, 1986
    Date of Patent: December 20, 1988
    Assignee: Electric Power Research Institute, Inc.
    Inventors: Ting L. Chu, Shirley S. Chu
  • Patent number: 4077818
    Abstract: Low-cost polycrystalline silicon solar cells supported on substrates are prepared by depositing successive layers of polycrystalline silicon containing appropriate dopants over supporting substrates of a member selected from the group consisting of metallurgical-grade polycrystalline silicon, graphite and steel coated with a diffusion barrier of silica, borosilicate, phosphosilicate, or mixtures thereof such that p-n junction devices are formed which effectively convert solar energy to electrical energy. To improve the conversion efficiency of the polycrystalline silicon solar cells, the crystallite size in the silicon is substantially increased by melting and solidifying a base layer of polycrystalline silicon before depositing the layers which form the p-n junction.
    Type: Grant
    Filed: June 4, 1976
    Date of Patent: March 7, 1978
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventor: Ting L. Chu
  • Patent number: 3961997
    Abstract: Low-cost polycrystalline silicon cells supported on substrates are prepared by depositing successive layers of polycrystalline silicon containing appropriate dopants over supporting substrates of a member selected from the group consisting of metallurgical-grade polycrystalline silicon, graphite and steel coated with a diffusion barrier of silica, borosilicate, phosphosilicate, or mixtures thereof such that p-n junction devices are formed which effectively convert solar energy to electrical energy.
    Type: Grant
    Filed: May 12, 1975
    Date of Patent: June 8, 1976
    Assignee: The United States of America as represented by the Administrator of the National Aeronautics and Space Administration
    Inventor: Ting L. Chu