Patents by Inventor Ting-Li Yang

Ting-Li Yang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240387422
    Abstract: A semiconductor structure is provided. The semiconductor structure includes an interconnection structure, a passivation layer and a dielectric capping layer. The interconnect structure has a conductive pad located at a top of the interconnection structure. The passivation layer is disposed on the interconnection structure. The passivation layer has a first opening to expose a portion of the conductive pad. The dielectric capping layer is conformally formed on the passivation layer and extends into the first opening. The dielectric capping layer has a second opening to expose the portion of the conductive pad.
    Type: Application
    Filed: April 17, 2024
    Publication date: November 21, 2024
    Inventors: Cheng-Lin HUANG, Ting-Li YANG
  • Publication number: 20240379605
    Abstract: A semiconductor device includes a substrate; an interconnect structure over the substrate; a first passivation layer over the interconnect structure; a first conductive pad, a second conductive pad, and a conductive line disposed over the first passivation layer and electrically coupled to conductive features of the interconnect structure; a conformal second passivation layer over and extending along upper surfaces and sidewalls of the first conductive pad, the second conductive pad, and the conductive line; a first conductive bump and a second conductive bump over the first conductive pad and the second conductive pad, respectively, where the first conductive bump and the second conductive bump extend through the conformal second passivation layer and are electrically coupled to the first conductive pad and the second conductive pad, respectively; and a dummy bump over the conductive line, where the dummy bump is separated from the conductive line by the conformal second passivation layer.
    Type: Application
    Filed: July 25, 2024
    Publication date: November 14, 2024
    Inventors: Ting-Li Yang, Po-Hao Tsai, Yi-Wen Wu, Sheng-Pin Yang, Hao-Chun Liu
  • Publication number: 20240363569
    Abstract: A method of forming a semiconductor device includes: forming an interconnect structure over a substrate; forming a first passivation layer over the interconnect structure; forming a first conductive feature over the first passivation layer and electrically coupled to the interconnect structure; conformally forming a second passivation layer over the first conductive feature and the first passivation layer; forming a dielectric layer over the second passivation layer; and forming a first bump via and a first conductive bump over and electrically coupled to the first conductive feature, where the first bump via is between the first conductive bump and the first conductive feature, where the first bump via extends into the dielectric layer, through the second passivation layer, and contacts the first conductive feature, where the first conductive bump is over the dielectric layer and electrically coupled to the first bump via.
    Type: Application
    Filed: July 3, 2024
    Publication date: October 31, 2024
    Inventors: Ting-Li Yang, Po-Hao Tsai, Ching-Wen Hsiao, Hong-Seng Shue, Ming-Da Cheng
  • Patent number: 12057423
    Abstract: A method of forming a semiconductor device includes: forming an interconnect structure over a substrate; forming a first passivation layer over the interconnect structure; forming a first conductive feature over the first passivation layer and electrically coupled to the interconnect structure; conformally forming a second passivation layer over the first conductive feature and the first passivation layer; forming a dielectric layer over the second passivation layer; and forming a first bump via and a first conductive bump over and electrically coupled to the first conductive feature, where the first bump via is between the first conductive bump and the first conductive feature, where the first bump via extends into the dielectric layer, through the second passivation layer, and contacts the first conductive feature, where the first conductive bump is over the dielectric layer and electrically coupled to the first bump via.
    Type: Grant
    Filed: October 1, 2021
    Date of Patent: August 6, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ting-Li Yang, Po-Hao Tsai, Ching-Wen Hsiao, Hong-Seng Shue, Ming-Da Cheng
  • Publication number: 20240250019
    Abstract: Methods for forming dummy under-bump metallurgy structures and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first redistribution line and a second redistribution line over a semiconductor substrate; a first passivation layer over the first redistribution line and the second redistribution line; a second passivation layer over the first passivation layer; a first under-bump metallurgy (UBM) structure over the first redistribution line, the first UBM structure extending through the first passivation layer and the second passivation layer and being electrically coupled to the first redistribution line; and a second UBM structure over the second redistribution line, the second UBM structure extending through the second passivation layer, the second UBM structure being electrically isolated from the second redistribution line by the first passivation layer.
    Type: Application
    Filed: March 7, 2024
    Publication date: July 25, 2024
    Inventors: Ting-Li Yang, Po-Hao Tsai, Ming-Da Cheng, Yung-Han Chuang, Hsueh-Sheng Wang
  • Publication number: 20240153849
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a chip structure including a substrate and a wiring structure over a first surface of the substrate. The semiconductor device structure includes a first seed layer over the wiring structure, a first inner wall of the first enlarged portion, and a second inner wall of the neck portion. The semiconductor device structure includes a second seed layer over a second surface of the substrate, a third inner wall of the second enlarged portion, and the first seed layer over the second inner wall of the neck portion. The second seed layer is in direct contact with the first seed layer.
    Type: Application
    Filed: January 2, 2024
    Publication date: May 9, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ting-Li YANG, Wen-Hsiung LU, Lung-Kai MAO, Fu-Wei LIU, Mirng-Ji LII
  • Patent number: 11955423
    Abstract: Methods for forming dummy under-bump metallurgy structures and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first redistribution line and a second redistribution line over a semiconductor substrate; a first passivation layer over the first redistribution line and the second redistribution line; a second passivation layer over the first passivation layer; a first under-bump metallurgy (UBM) structure over the first redistribution line, the first UBM structure extending through the first passivation layer and the second passivation layer and being electrically coupled to the first redistribution line; and a second UBM structure over the second redistribution line, the second UBM structure extending through the second passivation layer, the second UBM structure being electrically isolated from the second redistribution line by the first passivation layer.
    Type: Grant
    Filed: March 26, 2021
    Date of Patent: April 9, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Ting-Li Yang, Po-Hao Tsai, Ming-Da Cheng, Yung-Han Chuang, Hsueh-Sheng Wang
  • Patent number: 11942398
    Abstract: A semiconductor device includes a substrate, at least one via, a liner layer and a conductive layer. The substrate includes an electronic circuitry. The at least one via passes through the substrate. The at least one via includes a plurality of concave portions on a sidewall thereof. The liner layer fills in the plurality of concave portions of the at least one via. The conductive layer is disposed on the sidewall of the at least one via, covers the liner layer, and extends onto a surface of the substrate. The thickness of the conductive layer on the sidewall of the at least one via is varied.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: March 26, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ting-Li Yang, Wen-Hsiung Lu, Jhao-Yi Wang, Fu Wei Liu, Chin-Yu Ku
  • Publication number: 20240096827
    Abstract: In an embodiment, a device includes: a passivation layer on a semiconductor substrate; a first redistribution line on and extending along the passivation layer; a second redistribution line on and extending along the passivation layer; a first dielectric layer on the first redistribution line, the second redistribution line, and the passivation layer; and an under bump metallization having a bump portion and a first via portion, the bump portion disposed on and extending along the first dielectric layer, the bump portion overlapping the first redistribution line and the second redistribution line, the first via portion extending through the first dielectric layer to be physically and electrically coupled to the first redistribution line.
    Type: Application
    Filed: December 1, 2023
    Publication date: March 21, 2024
    Inventors: Chen-Shien Chen, Ting-Li Yang, Po-Hao Tsai, Chien-Chen Li, Ming-Da Cheng
  • Publication number: 20240083742
    Abstract: A micro electro mechanical system (MEMS) includes a circuit substrate comprising electronic circuitry, a support substrate having a recess, a bonding layer disposed between the circuit substrate and the support substrate, through holes passing through the circuit substrate to the recess, a first conductive layer disposed on a front side of the circuit substrate, and a second conductive layer disposed on an inner wall of the recess. The first conductive layer extends into the through holes and the second conductive layer extends into the through holes and coupled to the first conductive layer.
    Type: Application
    Filed: November 15, 2023
    Publication date: March 14, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ting-Li YANG, Kai-Di WU, Ming-Da CHENG, Wen-Hsiung LU, Cheng Jen LIN, Chin Wei KANG
  • Patent number: 11908790
    Abstract: A chip structure is provided. The chip structure includes a substrate. The chip structure includes a conductive line over the substrate. The chip structure includes a first passivation layer over the substrate and the conductive line. The chip structure includes a conductive pad over the first passivation layer covering the conductive line. The conductive pad is thicker and wider than the conductive line. The chip structure includes a first conductive via structure and a second conductive via structure passing through the first passivation layer and directly connected between the conductive pad and the conductive line. The chip structure includes a conductive pillar over the conductive pad.
    Type: Grant
    Filed: January 6, 2021
    Date of Patent: February 20, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ting-Li Yang, Po-Hao Tsai, Ching-Wen Hsiao, Hong-Seng Shue, Yu-Tse Su
  • Patent number: 11901266
    Abstract: A method for forming a semiconductor device structure is provided. The method includes providing a chip structure including a substrate and a wiring structure over a first surface of the substrate. The method includes removing a first portion of the wiring structure adjacent to the hole to widen a second portion of the hole in the wiring structure. The second portion has a first width increasing in a first direction away from the substrate. The method includes forming a first seed layer over the wiring structure and in the hole. The method includes thinning the substrate from a second surface of the substrate until the first seed layer in the hole is exposed. The method includes forming a second seed layer over the second surface of the substrate and the first seed layer in the hole.
    Type: Grant
    Filed: August 30, 2021
    Date of Patent: February 13, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ting-Li Yang, Wen-Hsiung Lu, Lung-Kai Mao, Fu-Wei Liu, Mirng-Ji Lii
  • Patent number: 11862588
    Abstract: In an embodiment, a device includes: a passivation layer on a semiconductor substrate; a first redistribution line on and extending along the passivation layer; a second redistribution line on and extending along the passivation layer; a first dielectric layer on the first redistribution line, the second redistribution line, and the passivation layer; and an under bump metallization having a bump portion and a first via portion, the bump portion disposed on and extending along the first dielectric layer, the bump portion overlapping the first redistribution line and the second redistribution line, the first via portion extending through the first dielectric layer to be physically and electrically coupled to the first redistribution line.
    Type: Grant
    Filed: May 18, 2021
    Date of Patent: January 2, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chen-Shien Chen, Ting-Li Yang, Po-Hao Tsai, Chien-Chen Li, Ming-Da Cheng
  • Patent number: 11851321
    Abstract: A micro electro mechanical system (MEMS) includes a circuit substrate comprising electronic circuitry, a support substrate having a recess, a bonding layer disposed between the circuit substrate and the support substrate, through holes passing through the circuit substrate to the recess, a first conductive layer disposed on a front side of the circuit substrate, and a second conductive layer disposed on an inner wall of the recess. The first conductive layer extends into the through holes and the second conductive layer extends into the through holes and coupled to the first conductive layer.
    Type: Grant
    Filed: March 1, 2021
    Date of Patent: December 26, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Ting-Li Yang, Kai-Di Wu, Ming-Da Cheng, Wen-Hsiung Lu, Cheng Jen Lin, Chin Wei Kang
  • Patent number: 11855028
    Abstract: A semiconductor device includes a substrate; an interconnect structure over the substrate; a first passivation layer over the interconnect structure; a first conductive pad, a second conductive pad, and a conductive line disposed over the first passivation layer and electrically coupled to conductive features of the interconnect structure; a conformal second passivation layer over and extending along upper surfaces and sidewalls of the first conductive pad, the second conductive pad, and the conductive line; a first conductive bump and a second conductive bump over the first conductive pad and the second conductive pad, respectively, where the first conductive bump and the second conductive bump extend through the conformal second passivation layer and are electrically coupled to the first conductive pad and the second conductive pad, respectively; and a dummy bump over the conductive line, where the dummy bump is separated from the conductive line by the conformal second passivation layer.
    Type: Grant
    Filed: May 21, 2021
    Date of Patent: December 26, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING
    Inventors: Ting-Li Yang, Po-Hao Tsai, Yi-Wen Wu, Sheng-Pin Yang, Hao-Chun Liu
  • Patent number: 11855017
    Abstract: Methods for forming under-bump metallurgy (UBM) structures having different surface profiles and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first redistribution line and a second redistribution line over a semiconductor substrate; a first passivation layer over the first redistribution line and the second redistribution line; a first under-bump metallurgy (UBM) structure over and electrically coupled to the first redistribution line, the first UBM structure extending through the first passivation layer, a top surface of the first UBM structure being concave; and a second UBM structure over and electrically coupled to the second redistribution line, the second UBM structure extending through the first passivation layer, a top surface of the second UBM structure being flat or convex.
    Type: Grant
    Filed: June 9, 2021
    Date of Patent: December 26, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Ting-Li Yang, Po-Hao Tsai, Ming-Da Cheng, Yung-Han Chuang, Hsueh-Sheng Wang
  • Publication number: 20230411318
    Abstract: Methods for forming under-bump metallurgy (UBM) structures having different surface profiles and semiconductor devices formed by the same are disclosed. In an embodiment, a semiconductor device includes a first redistribution line and a second redistribution line over a semiconductor substrate; a first passivation layer over the first redistribution line and the second redistribution line; a first under-bump metallurgy (UBM) structure over and electrically coupled to the first redistribution line, the first UBM structure extending through the first passivation layer, a top surface of the first UBM structure being concave; and a second UBM structure over and electrically coupled to the second redistribution line, the second UBM structure extending through the first passivation layer, a top surface of the second UBM structure being flat or convex.
    Type: Application
    Filed: August 7, 2023
    Publication date: December 21, 2023
    Inventors: Ting-Li Yang, Po-Hao Tsai, Ming-Da Cheng, Yung-Han Chuang, Hsueh-Sheng Wang
  • Publication number: 20230395468
    Abstract: A semiconductor device includes a substrate, at least one via, a liner layer and a conductive layer. The substrate includes an electronic circuitry. The at least one via passes through the substrate. The at least one via includes a plurality of concave portions on a sidewall thereof. The liner layer fills in the plurality of concave portions of the at least one via. The conductive layer is disposed on the sidewall of the at least one via, covers the liner layer, and extends onto a surface of the substrate. The thickness of the conductive layer on the sidewall of the at least one via is varied.
    Type: Application
    Filed: August 2, 2023
    Publication date: December 7, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ting-Li Yang, Wen-Hsiung Lu, Jhao-Yi Wang, Fu Wei Liu, Chin-Yu Ku
  • Publication number: 20230369269
    Abstract: A semiconductor device includes a substrate; an interconnect structure over the substrate; a first passivation layer over the interconnect structure; a first conductive pad, a second conductive pad, and a conductive line disposed over the first passivation layer and electrically coupled to conductive features of the interconnect structure; a conformal second passivation layer over and extending along upper surfaces and sidewalls of the first conductive pad, the second conductive pad, and the conductive line; a first conductive bump and a second conductive bump over the first conductive pad and the second conductive pad, respectively, where the first conductive bump and the second conductive bump extend through the conformal second passivation layer and are electrically coupled to the first conductive pad and the second conductive pad, respectively; and a dummy bump over the conductive line, where the dummy bump is separated from the conductive line by the conformal second passivation layer.
    Type: Application
    Filed: July 27, 2023
    Publication date: November 16, 2023
    Inventors: Ting-Li Yang, Po-Hao Tsai, Yi-Wen Wu, Sheng-Pin Yang, Hao-Chun Liu
  • Publication number: 20230154788
    Abstract: A semiconductor device structure is provided. The semiconductor device structure includes a first conductive line over a substrate. The semiconductor device structure includes a first protection cap over the end portion. The first protection cap and the first conductive line are made of different conductive materials, and the first protection cap exposes a peripheral region of a top surface of the end portion. The semiconductor device structure includes a first photosensitive dielectric layer over the substrate, the first conductive line, and the first protection cap. The semiconductor device structure includes a conductive via structure passing through the first photosensitive dielectric layer and connected to the first protection cap.
    Type: Application
    Filed: January 13, 2023
    Publication date: May 18, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Ting-Li YANG, Wei-Li HUANG, Sheng-Pin YANG, Chi-Cheng CHEN, Hon-Lin HUANG, Chin-Yu KU, Chen-Shien CHEN