Abstract: A wireless access point information generation method, a device, and a computer readable medium are provided. The method includes: extracting candidate character images from an obtained image, wherein the obtained image includes an image indicating a wireless access point; determining a character image in the extracted candidate character images; determining a recognition result of the determined character image by using a character-recognition model, wherein the character-recognition model is used for representing a correspondence between the character image and a character; and generating an access point identifier and a password of the wireless access point according to the determined recognition result. The method provides a manner of generating wireless access point information.

Abstract: A wireless access point information generation method, a device, and a computer readable medium are provided. The method includes: extracting candidate character images from an obtained image, wherein the obtained image includes an image indicating a wireless access point; determining a character image in the extracted candidate character images; determining a recognition result of the determined character image by using a character-recognition model, wherein the character-recognition model is used for representing a correspondence between the character image and a character; and generating an access point identifier and a password of the wireless access point according to the determined recognition result. The method provides a manner of generating wireless access point information.

Abstract: A method for rerouting traffic by a switch in a software defined networking (SDN) arrangement comprises an additional switch, multiple routing paths between the original switch and the additional switch being preconfigured by a SDN controller. The original switch collects network statistics by transmitting monitoring packets on each of the multiple routing paths and then calculating a round-trip time (RTT) value for each path on the return of the monitoring packets to the additional switch, the two switches functioning together as local controllers. After collection of network statistics from all the multiple routing paths, the original switch selects the routing path with the smallest RTT value and reroutes traffic accordingly.

Abstract: A tracking device, a tracking system, and a tracking device control method with safe-zone demarcation based on the usually detected WiFi access points are provided. The tracking device includes a telecommunication transceiver, a WiFi receiver and a microcontroller. The microcontroller is configured to operate the telecommunication transceiver to transmit WiFi information to a server during a data-collection period for behavior analysis of a tracked object equipped with the tracking device and for safe-zone demarcation of the tracking device. The WiFi information indicates WiFi access points detected by the WiFi receiver. The safe-zone demarcation of the tracking device is adaptive to habitual behaviors, obtained from the behavior analysis, of the tracked object.

Abstract: A tracking device, a tracking system, and a tracking device control method with safe-zone demarcation based on the usually detected WiFi access points are provided. The tracking device includes a telecommunication transceiver, a WiFi receiver and a microcontroller. The microcontroller is configured to operate the telecommunication transceiver to transmit WiFi information to a server during a data-collection period for behavior analysis of a tracked object equipped with the tracking device and for safe-zone demarcation of the tracking device. The WiFi information indicates WiFi access points detected by the WiFi receiver. The safe-zone demarcation of the tracking device is adaptive to habitual behaviors, obtained from the behavior analysis, of the tracked object.

Abstract: A method of growth and transfer of epitaxial structures from semiconductor crystalline substrate(s) to an assembly substrate. Using this method, the assembly substrate encloses one or more semiconductor materials and defines a wafer size that is equal to or larger than the semiconductor crystalline substrate for further wafer processing. The process also provides a unique platform for heterogeneous integration of diverse material systems and device technologies onto one single substrate.

Abstract: Methods and structures for heterogeneous integration of diverse material systems and device technologies onto a single substrate incorporate layer transfer techniques into an epitaxy level packaging process. A planar substrate surface of multiple epitaxial areas of different materials can be heterogeneously integrated with a substrate material. Complex assembly and lattice engineering is significantly reduced. Microsystems of different circuits made from different materials can be built from a single wafer Fab line employing the claimed processes.

Abstract: A method of image retrieval from a target image collection, including segmenting a query image into two or more bands, obtaining weighted color histogram vectors for the two or more bands in the query image, and obtaining weighted color histogram vectors for two or more bands in a target image. A distance measurement is determined between the query image and the target image using the weighted color histogram vectors from corresponding bands in the query image and the target image. Bands in an image can be groups, strips, sections, regions, or the like, and can be linear bands, rectangular bands, circular bands, or the like. The bands are preferably, though not necessarily, concentric or otherwise aligned and any number of bands can be utilized. Also, content based image retrieval is provided that incorporates use of varying photo composition in different regions as a technique for improving accuracy of retrieval.

Abstract: A method, processing system and computer program product for image retrieval. In one aspect, the method includes, in a processing system: determining a query feature set for a search image, wherein the query feature set includes texture data indicative of a texture of the search image for a plurality of resolutions of the search image; determining a dissimilarity measurement between at least one query feature of the query feature set and at least one target feature of a target image set for one or more target images, wherein the dissimilarity measurement is determined at least partially based upon the dissimilarity between the texture data of the search image and one or more target images for at least some of the plurality of resolutions of the target image; and identifying one or more target images based upon the dissimilarity measurement.

Abstract: Methods and structures for heterogeneous integration of diverse material systems and device technologies onto a single substrate incorporate layer transfer techniques into an epitaxy level packaging process. A planar substrate surface of multiple epitaxial areas of different materials can be heterogeneously integrated with a substrate material. Complex assembly and lattice engineering is significantly reduced. Microsystems of different circuits made from different materials can be built from a single wafer Fab line employing the claimed processes.

Abstract: A method of growing an epitaxial semiconductor structure is disclosed. The growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.

Abstract: A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.

Abstract: A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.

Abstract: A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.

Abstract: A method of growing an epitaxial semiconductor structure is disclosed. The growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.

Abstract: A method of growth and transfer of epitaxial structures from semiconductor crystalline substrate(s) to an assembly substrate. Using this method, the assembly substrate encloses one or more semiconductor materials and defines a wafer size that is equal to or larger than the semiconductor crystalline substrate for further wafer processing. The process also provides a unique platform for heterogeneous integration of diverse material systems and device technologies onto one single substrate.

Abstract: Methods and structures for heterogeneous integration of diverse material systems and device technologies onto a single substrate incorporate layer transfer techniques into an epitaxy level packaging process. A planar substrate surface of multiple epitaxial areas of different materials can be heterogeneously integrated with a substrate material. Complex assembly and lattice engineering is significantly reduced. Microsystems of different circuits made from different materials can be built from a single wafer Fab line employing the claimed processes.

Abstract: An apparatus for growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.

Abstract: A method of growing an epitaxial film and transferring it to an assembly substrate is disclosed. The film growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.

Abstract: A method of growing an epitaxial semiconductor structure is disclosed. The growth and transfer are made using an epitaxy lateral overgrowth technique. The formed epitaxial film on an assembly substrate can be further processed to form devices such as solar cell, light emitting diode, and other devices and assembled into higher integration of desired applications.