Patents by Inventor Ting-Wei Chiang
Ting-Wei Chiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 11755813Abstract: An IC structure includes a first cell and a first and second rail. The first cell includes a first and second active region and a first, a second and a third gate structure. The first active region having a first dopant type. The second active region having a second dopant type. The first gate structure extending in a second direction, overlapping the first or the second active region. The second gate structure extending in the second direction, and overlapping a first edge of the first or second active region. The third gate structure extending in the second direction, and overlapping at least a second edge of the first or second active region. The first rail extending in the first direction and overlapping a middle portion of the first active region. The second rail extending in the first direction and overlapping a middle portion of the second active region.Type: GrantFiled: August 17, 2021Date of Patent: September 12, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Hui-Zhong Zhuang, Ting-Wei Chiang, Li-Chun Tien, Shun Li Chen, Lee-Chung Lu
-
Patent number: 11735625Abstract: A semiconductor device, including: a first OD strip, a first doping region, a second OD strip, a second doping region, and a third doping region. The first OD strip extending in a first direction is disposed on the first OD strip, and includes a first-type dopant to define an active region of a first MOS. The second OD strip extending in the first direction and immediately adjacent to the first OD strip in a second direction, wherein the second direction is orthogonal with the first direction. The second doping region is disposed on the second OD strip, and includes a second-type dopant to define an active region of a second MOS. The third doping region is disposed on the second OD strip, and includes the second-type dopant and is configured to be a body terminal of the first MOS.Type: GrantFiled: September 29, 2020Date of Patent: August 22, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Jung-Chan Yang, Hui-Zhong Zhuang, Chih-Liang Chen, Ting-Wei Chiang, Cheng-I Huang, Kuo-Nan Yang
-
Patent number: 11727187Abstract: A method of manufacturing a transmission gate includes overlying a first active area with a first metal zero segment, the first active area including first and second PMOS transistors, overlying a second active area with a second metal zero segment, the second active area including first and second NMOS transistors, and configuring the first and second PMOS transistors and the first and second NMOS transistors as a transmission gate by forming three conductive paths. At least one of the conductive paths includes a first conductive segment perpendicular to the first and second metal zero segments, and the first and second metal zero segments have a first offset distance corresponding to three times a metal zero pitch.Type: GrantFiled: March 8, 2022Date of Patent: August 15, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Shao-Lun Chien, Pin-Dai Sue, Li-Chun Tien, Ting-Wei Chiang, Ting Yu Chen
-
Publication number: 20230253396Abstract: The present disclosure describes an example method for routing a standard cell with multiple pins. The method can include modifying a dimension of a pin of the standard cell, where the pin is spaced at an increased distance from a boundary of the standard cell than an original position of the pin. The method also includes routing an interconnect from the pin to a via placed on a pin track located between the pin and the boundary and inserting a keep out area between the interconnect and a pin from an adjacent standard cell. The method further includes verifying that the keep out area separates the interconnect from the pin from the adjacent standard cell by at least a predetermined distance.Type: ApplicationFiled: April 13, 2023Publication date: August 10, 2023Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Fong-yuan CHANG, Chun-Chen CHEN, Sheng-Hsiung CHEN, Ting-Wei CHIANG, Chung-Te LIN, Jung-Chan YANG, Lee-Chung LU, Po-Hsiang HUANG
-
Patent number: 11704465Abstract: An integrated circuit structure includes a first and second power rail extending in a first direction and being located at a first level, a first and second set of conductive structures located at a second level and extending in a second direction, a first and second set of vias, and a first and second conductive structure located at a third level and extending in the second direction. The first set of vias coupling the first power rail to the first set of conductive structures. The second set of vias coupling the second power rail to the second set of conductive structures. The first conductive structure overlaps a first conductive structure of the first set of conductive structures and the second set of conductive structures. The second conductive structure overlaps a second conductive structure of the first set of conductive structures and the second set of conductive structures.Type: GrantFiled: November 30, 2020Date of Patent: July 18, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jung-Chan Yang, Ting-Wei Chiang, Cheng-I Huang, Hui-Zhong Zhuang, Chi-Yu Lu, Stefan Rusu
-
Publication number: 20230223392Abstract: An integrated circuit includes a first gate electrode structure extending in a first direction. The integrated circuit includes a second gate electrode structure extending in the first direction and separated in a second direction from the first gate electrode structure. The integrated circuit includes a conductive feature. The conductive feature includes a first section electrically connected to the second portion, a second section electrically connected to the second gate structure, and a third section electrically connecting the first section and the second section, wherein the third section extends in a third direction angled with respect to both the first direction and the second direction.Type: ApplicationFiled: March 15, 2023Publication date: July 13, 2023Inventors: Tung-Heng HSIEH, Ting-Wei CHIANG, Chung-Te LIN, Hui-Zhong ZHUANG, Li-Chun TIEN, Sheng-Hsiung WANG
-
Patent number: 11694013Abstract: An integrated circuit includes a first and a set of conductive traces, and a first conductive feature. The second set of conductive traces includes a first conductive trace of the second set of conductive traces corresponding to a gate terminal of a first p-type transistor, and a second conductive trace of the second set of conductive traces corresponding to a gate terminal of a first n-type transistor. The first conductive feature corresponds to at least a first contact of a first dummy transistor. The first conductive trace of the second set of conductive traces is electrically coupled to the second conductive trace of the second set of conductive traces by at least the first conductive feature. The first n-type transistor being part of a first transmission gate. The first p-type transistor being part of a second transmission gate.Type: GrantFiled: July 8, 2022Date of Patent: July 4, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Ting-Wei Chiang, Hui-Zhong Zhuang, Li-Chun Tien
-
Patent number: 11675954Abstract: A method of designing a device includes identifying a pin to be inserted into a first layer of the device, wherein the first layer has a plurality of first routing tracks, and each of the plurality of first routing tracks extend in a first direction. The method further includes identifying a blocking shape on a second layer different from the first layer, wherein the second layer has a plurality of second routing tracks, and each of the plurality of second routing tracks extends in a second direction different from the first direction. The method further includes determining at least one candidate location for the pin in the first layer based on the plurality of first routing tracks of the first layer. The method further includes setting a location for the pin in the first layer based on the determined at least one candidate location.Type: GrantFiled: October 20, 2020Date of Patent: June 13, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Sheng-Hsiung Chen, Jyun-Hao Chang, Ting-Wei Chiang, Fong-Yuan Chang, I-Lun Tseng, Po-Hsiang Huang
-
Patent number: 11664383Abstract: A semiconductor structure is disclosed. The semiconductor structure includes: a first standard cell; and a second standard cell; wherein a cell width of the first standard cell along a first direction is substantially the same as a cell width of the second standard cell along the first direction, and a cell height of the first standard cell along a second direction perpendicular to the first direction is substantially greater than a cell height of the second standard cell along the second direction.Type: GrantFiled: May 25, 2021Date of Patent: May 30, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.Inventors: Hsueh-Chih Chou, Chia Hao Tu, Sang Hoo Dhong, Lee-Chung Lu, Li-Chun Tien, Ting-Wei Chiang, Hui-Zhong Zhuang
-
Patent number: 11652041Abstract: A device includes gates and a first conductive segment. A first distance is present between a first gate of the gates and the first conductive segment. A second distance is present between a second gate of the gates and the first conductive segment. The first distance is greater than the second distance.Type: GrantFiled: July 16, 2021Date of Patent: May 16, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chung-Te Lin, Ting-Wei Chiang, Hui-Zhong Zhuang, Li-Chun Tien, Pin-Dai Sue
-
Patent number: 11637098Abstract: The present disclosure describes an example method for routing a standard cell with multiple pins. The method can include modifying a dimension of a pin of the standard cell, where the pin is spaced at an increased distance from a boundary of the standard cell than an original position of the pin. The method also includes routing an interconnect from the pin to a via placed on a pin track located between the pin and the boundary and inserting a keep out area between the interconnect and a pin from an adjacent standard cell. The method further includes verifying that the keep out area separates the interconnect from the pin from the adjacent standard cell by at least a predetermined distance.Type: GrantFiled: May 10, 2021Date of Patent: April 25, 2023Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Fong-yuan Chang, Lee-Chung Lu, Po-Hsiang Huang, Chun-Chen Chen, Chung-Te Lin, Ting-Wei Chiang, Sheng-Hsiung Chen, Jung-Chan Yang
-
Publication number: 20230124337Abstract: A semiconductor device includes at least one memory cell and at least one logic cell. The at least one logic cell is disposed next to the at least one memory cell. The at least one logic cell includes fins. The fins are separated into fin groups for forming transistors. A distance between two adjacent groups of the plurality of fin groups is different from a distance between another two adjacent groups of the plurality of fin groups.Type: ApplicationFiled: December 15, 2022Publication date: April 20, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: You-Cheng XIAO, Jhih-Siang HU, Ru-Yu WANG, Jung-Hsuan CHEN, Ting-Wei CHIANG
-
Patent number: 11631661Abstract: An integrated circuit includes a first gate electrode structure extending in a first direction and having a first portion and a second portion separated from each other. The integrated circuit further includes a second gate electrode structure extending in the first direction and separated in a second direction from the first gate electrode structure. The integrated circuit further includes a conductive feature. The conductive feature includes a first section electrically connected to the second portion, wherein the first section extends in the second direction. The conductive feature further includes a second section electrically connected to the second gate electrode structure, wherein the second section extends in the second direction. The conductive feature further includes a third section electrically connecting the first section and the second section, wherein the third section extends in a third direction angled with respect to both the first direction and the second direction.Type: GrantFiled: May 11, 2021Date of Patent: April 18, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Tung-Heng Hsieh, Ting-Wei Chiang, Chung-Te Lin, Hui-Zhong Zhuang, Li-Chun Tien, Sheng-Hsiung Wang
-
Publication number: 20230112357Abstract: A circuit includes a first transistor, a second type-one transistor, a first type-two transistor, a third type-one transistor, a fourth type-one transistor, and a fifth type-one transistor. The first type-one transistor has a gate configured to have a first supply voltage of a first power supply. The first type-two transistor has a gate configured to have a second supply voltage of the first power supply. The third type-one transistor has a first active-region conductively connected with an active-region of the first type-one transistor. Third type-one transistor has a second active-region and a gate conductively connected to each other. The fifth type-one transistor has a first active-region conductively connected with the gate of the third type-one transistor and has a second active-region configured to have a first supply voltage of a second power supply. The fifth type-one transistor is configured to be at a conducting state.Type: ApplicationFiled: December 9, 2022Publication date: April 13, 2023Inventors: Chi-Yu LU, Ting-Wei CHIANG, Hui-Zhong ZHUANG, Jerry Chang Jui KAO, Pin-Dai SUE, Jiun-Jia HUANG, Yu-Ti SU, Wei-Hsiang MA
-
Publication number: 20230111939Abstract: A method includes: abutting a first logic cell having a first cell height to a first memory cell having the first cell height; forming a first conductive rail and a second conductive rail at opposite sides of the first memory cell, respectively; forming a plurality of first conductive rails between the first conductive rail and the second conductive rail; forming a third conductive rail and a fourth conductive rail at opposite sides of the first logic cell, respectively; and forming a plurality of second conductive rails between the third conductive rail and the fourth conductive rail. An amount of the plurality of second conductive rails is larger than an amount of the plurality of first conductive rails.Type: ApplicationFiled: December 12, 2022Publication date: April 13, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: You-Cheng XIAO, Jhih-Siang HU, Ru-Yu WANG, Jung-Hsuan CHEN, Ting-Wei CHIANG
-
Publication number: 20230111501Abstract: An integrated circuit includes a first and second active region, a first insulating region, and a first and second contact. The first and second active regions extend in a first direction, are in a substrate, and are located on a first level. The first active region includes a first drain/source region and a second drain/source region. The second active region includes a third drain/source region. The first insulating region is over the first drain/source region. The first contact extends in a second direction, overlaps the third drain/source region, is electrically coupled to the third drain/source region and is located on a second level. The second contact extends in at least the second direction, overlaps the first insulating region and the first contact. The second contact is electrically insulated from the first drain/source region, is electrically coupled to the third drain/source region, and is located on a third level.Type: ApplicationFiled: December 13, 2022Publication date: April 13, 2023Inventors: Pochun WANG, Yu-Jung CHANG, Hui-Zhong ZHUANG, Ting-Wei CHIANG
-
Publication number: 20230108658Abstract: An integrated circuit includes a plurality of metal lines extending along a first direction, the plurality of metal lines being separated, in a second direction perpendicular to the first direction, by integral multiples of a nominal minimum pitch. The integrated circuit further includes a plurality of standard cells, at least one of the plurality of standard cells having a cell height along the second direction being a non-integral multiple of the nominal minimum pitch.Type: ApplicationFiled: December 9, 2022Publication date: April 6, 2023Inventors: Shang-Chih HSIEH, Chun-Fu CHEN, Ting-Wei CHIANG, Hui-Zhong ZHUANG, Hsiang-Jen TSENG
-
Publication number: 20230060387Abstract: An integrated circuit includes a first and second active region, a first conductive structure, an insulating region, a set of gates and a set of contacts. The first and second active region are in a substrate, extend in a first direction, are located on a first level, and being separated from one another in a second direction. The first conductive structure extends in the first direction, is located on the first level, and is between the first and second active region. The insulating region is located on at least the first level, and is between the first and second active region and the first conductive structure. The set of gates extend in the second direction, overlap the first conductive structure, and is located on a second level. The set of contacts extend in the second direction, overlap the first conductive structure, and is located on the second level.Type: ApplicationFiled: November 7, 2022Publication date: March 2, 2023Inventors: Pochun WANG, Ting-Wei CHIANG, Chih-Ming LAI, Hui-Zhong ZHUANG, Jung-Chan YANG, Ru-Gun LIU, Ya-Chi CHOU, Yi-Hsiung LIN, Yu-Xuan HUANG, Yu-Jung CHANG, Guo-Huei WU, Shih-Ming CHANG
-
Publication number: 20230042514Abstract: A semiconductor device includes a substrate; and a cell region having opposite first and second sides, the cell region including active regions formed in the substrate; relative to an imaginary first reference line, a first majority of the active regions having first ends which align with the first reference line, the first side being parallel and proximal to the first reference line; relative to an imaginary second reference line in the second direction, a second majority of the active regions having second ends which align with the second reference line, the second side being parallel and proximal to the second reference line; and gate structures correspondingly on first and second ones of the active regions; and relative to the second direction, a first end of a selected one of the gate structures abuts an intervening region between the first and second active regions.Type: ApplicationFiled: January 21, 2022Publication date: February 9, 2023Inventors: Ru-Yu WANG, You-Cheng XIAO, Kao-Cheng LIN, Pin-Dai SUE, Ting-Wei CHIANG
-
Patent number: 11574110Abstract: A method of fabricating an integrated circuit structure includes placing a first set of conductive structure layout patterns on a first layout level, placing a second set of conductive structure layout patterns on a second layout level, placing a first set of via layout patterns between the second set of conductive structure layout patterns and the first set of conductive structure layout patterns, and manufacturing the integrated circuit structure based on at least one of the layout patterns of the integrated circuit. At least one of the layout patterns is stored on a non-transitory computer-readable medium, and at least one of the placing operations is performed by a hardware processor. The first set of conductive structure layout patterns extends in a first direction. The second set of conductive structure layout patterns extends in the second direction, and overlap the first set of conductive structure layout patterns.Type: GrantFiled: November 30, 2018Date of Patent: February 7, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Jung-Chan Yang, Ting-Wei Chiang, Jerry Chang-Jui Kao, Hui-Zhong Zhuang, Lee-Chung Lu, Li-Chun Tien, Meng-Hung Shen, Shang-Chih Hsieh, Chi-Yu Lu