Patents by Inventor Ting-Wei Ko

Ting-Wei Ko has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Anti-reflective integrated touch display panel
    Patent number: 10705639
    Abstract: An anti-reflective integrated touch display panel includes an anti-reflective structure and touch electrodes. The anti-reflective structure includes a first insulating layer, a second insulating layer disposed on the first insulating layer, a conducting layer disposed on the second insulating layer, a third insulating layer disposed on the second insulating layer, and a fourth insulating layer disposed on the third insulating layer. The first insulating layer includes silicon oxide or silicon nitride, and has a thickness of 0.1 to 2 micrometers. The second insulating layer includes silicon oxide or strontium oxide, and has a thickness of 0.001 to 0.1 micrometer. The conducting layer includes molybdenum, and has a thickness of 0.01 to 0.05 micrometer. The fourth insulating layer includes silicon nitride, and has a thickness of 0.001 to 0.3 micrometer. The touch electrodes are disposed between the third insulating layer and the fourth insulating layer.
    Type: Grant
    Filed: January 29, 2019
    Date of Patent: July 7, 2020
    Assignee: Au Optronics Corporation
    Inventors: Chun-Cheng Hung, Wen-Jen Li, Yen-Shih Huang, Chia-Ming Chen, Ting-Wei Ko, Chia-Yuan Yeh
  • ANTI-REFLECTIVE INTEGRATED TOUCH DISPLAY PANEL
    Publication number: 20200057520
    Abstract: An anti-reflective integrated touch display panel includes an anti-reflective structure and touch electrodes. The anti-reflective structure includes a first insulating layer, a second insulating layer disposed on the first insulating layer, a conducting layer disposed on the second insulating layer, a third insulating layer disposed on the second insulating layer, and a fourth insulating layer disposed on the third insulating layer. The first insulating layer includes silicon oxide or silicon nitride, and has a thickness of 0.1 to 2 micrometers. The second insulating layer includes silicon oxide or strontium oxide, and has a thickness of 0.001 to 0.1 micrometer. The conducting layer includes molybdenum, and has a thickness of 0.01 to 0.05 micrometer. The fourth insulating layer includes silicon nitride, and has a thickness of 0.001 to 0.3 micrometer. The touch electrodes are disposed between the third insulating layer and the fourth insulating layer.
    Type: Application
    Filed: January 29, 2019
    Publication date: February 20, 2020
    Applicant: Au Optronics Corporation
    Inventors: Chun-Cheng Hung, Wen-Jen Li, Yen-Shih Huang, Chia-Ming Chen, Ting-Wei Ko, Chia-Yuan Yeh