Patents by Inventor Ting-Wei Yuan

Ting-Wei Yuan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240071833
    Abstract: The present disclosure relates to a semiconductor device with a hybrid fin-dielectric region. The semiconductor device includes a substrate, a source region and a drain region laterally separated by a hybrid fin-dielectric (HFD) region. A gate electrode is disposed above the HFD region and the HFD region includes a plurality of fins covered by a dielectric and separated from the source region and the drain region by the dielectric.
    Type: Application
    Filed: August 25, 2022
    Publication date: February 29, 2024
    Inventors: Yi-Huan Chen, Huan-Chih Yuan, Yu-Chang Jong, Scott Yeh, Fei-Yun Chen, Yi-Hao Chen, Ting-Wei Chou
  • Patent number: D784343
    Type: Grant
    Filed: February 1, 2016
    Date of Patent: April 18, 2017
    Assignee: Acer Incorporated
    Inventors: Chu-Yu Chen, Ming-Haw Wang, Ting-Wei Yuan, Shang-Chuan Lin, Chun-Chieh Chiu
  • Patent number: D816086
    Type: Grant
    Filed: February 1, 2016
    Date of Patent: April 24, 2018
    Assignee: Acer Incorporated
    Inventors: Chu-Yu Chen, Ting-Wei Yuan, Chun-Chieh Chiu