Abstract: In some embodiments, the present disclosure relates to an integrated circuit (IC) in which a memory structure comprises an inhibition layer inserted between two ferroelectric layers to create a tetragonal-phase dominant ferroelectric structure. In some embodiments, the ferroelectric structure includes a first ferroelectric layer, a second ferroelectric layer overlying the first ferroelectric layer, and a first inhibition layer disposed between the first and second ferroelectric layers and bordering the second ferroelectric layer. The first inhibition layer is a different material than the first and second ferroelectric layers.

Abstract: A semiconductor device includes a fin structure. A source/drain region is formed on the fin structure. A first gate structure is disposed over the fin structure. A source/drain contact is disposed over the source/drain region. The source/drain contact has a protruding segment that protrudes at least partially over the first gate structure. The source/drain contact electrically couples together the source/drain region and the first gate structure.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a channel layer, a barrier layer, a compound semiconductor layer, a gate electrode, and a stack of dielectric layers. The channel layer is disposed on the substrate. The barrier layer is disposed on the channel layer. The compound semiconductor layer is disposed on the barrier layer. The gate electrode is disposed on the compound semiconductor layer. The stack of dielectric layers is disposed on the gate electrode. The stack of dielectric layers includes layers having different etching rates.

Abstract: A method of manufacturing a semiconductor device includes the following steps. A photoresist layer is formed over a material layer on a substrate. The photoresist layer has a composition including a solvent and a first photo-active compound dissolved in the solvent. The first photo-active compound is represented by the following formula (A1) or formula (A2): Zr12O8(OH)14(RCO2)18 ??Formula (A1); or Hf6O4(OH)6(RCO2)10 ??Formula (A2). R in the formula (A1) and R in the formula (A2) each include one of the following formulae (1) to (6): The photoresist layer is patterned. The material layer is etched using the photoresist layer as an etch mask.

Abstract: A microfluidic detection unit comprises at least one fluid injection section, a fluid storage section and a detection section. Each fluid injection section defines a fluid outlet; the fluid storage section is in gas communication with the atmosphere and defines a fluid inlet; the detection section defines a first end in communication with the fluid outlet and a second end in communication with the fluid inlet. A height difference is defined between the fluid outlet and the fluid inlet along the direction of gravity. When a first fluid is injected from the at least one fluid injection section, the first fluid is driven by gravity to pass through the detection section and accumulate to form a droplet at the fluid inlet, such that a state of fluid pressure equilibrium of the first fluid is established.

Abstract: Provided are sustained-release pharmaceutical compositions including a ketamine pamoate salt and a pharmaceutically acceptable carrier thereof. The compositions include aqueous suspension, solution and matrix delivery system, which can provide sustained release for anesthesia, analgesia or treatment of central nervous system and anti-inflammatory diseases.

Abstract: A method of wireless signal transmission management includes transmitting a plurality of data packets to tethering equipment from user equipment to tethering equipment, determining a size of each of the plurality of data packets by the tethering equipment, designating data packets of the plurality of data packets having a specific range of sizes as control signal packets by the tethering equipment, and prioritizing in transmitting the control signal packets to a cellular network by the tethering equipment.

Abstract: The disclosure provides a limit device and a robot using the same. The limit device comprises a first connecting member, a transmission rod and a second connecting member. The first connecting member comprising a first main body portion and two first connecting elements. The two first connecting elements are arranged at intervals. The two first connecting elements are respectively connected to the first main body. The transmission rod comprising a first end and a second end. The first end and the second end are arranged at intervals. The first end penetrates through one of the two first connecting elements. The second end penetrates through the other one of the two first connecting element. The second connecting member provided with two indexing buckles. The two indexing buckles are arranged at intervals, each of the indexing buckles comprises a first limiting groove and a second limiting groove.

Abstract: A slurry monitoring device, a CMP system and a method of in-line monitoring a slurry are provided. The slurry monitoring device incudes a slurry metrology cell, a plurality of light sources and at least one optical detector. The slurry metrology cell is configured to accommodating a slurry. The light sources are configured to emit light beams on the slurry in the slurry metrology cell. The light sources include a first light source configured to emit a first light beam having a first wavelength, and a second light source configured to emit a second light beam having a second wavelength longer than the first wavelength. The at least one optical detector is configured to detect an intensity of the light beams scattered by abrasive particles in the slurry.

Abstract: An electronic circuit for operating with a display panel including touch sensors and fingerprint sensors is provided. The electronic circuit includes a first circuit, a second circuit, a third circuit, a first switch circuit and a control circuit. The first circuit generates display driving signals for driving the display panel. The second circuit receives fingerprint sensing signals from the fingerprint sensors. The third circuit determines a touch information according to touch sensing signals from the touch sensors. The first switch circuit includes a plurality of first switch units, each of the first switch units includes a first switch element and a second switch element. The control circuit controls the first switch circuit to transmit the display driving signals in a first time interval, controls the first switch circuit to transmit the fingerprint sensing signals in a second time interval, and controls the third circuit to receive the fingerprint sensing signals in a third time interval.

Abstract: Integrated fan-out packages and methods of forming the same are disclosed. An integrated fan-out package includes two dies, an encapsulant, a first metal line and a plurality of dummy vias. The encapsulant is disposed between the two dies. The first metal line is disposed over the two dies and the encapsulant, and electrically connected to the two dies. The plurality of dummy vias is disposed over the encapsulant and aside the first metal line.

Abstract: A detection system and method for the migrating cell is provided. The system is configured to detect a migrating cell combined with an immunomagnetic bead. The system includes a platform, a microchannel, a magnetic field source, a coherent light source and an optical sensing module. The microchannel is configured to allow the migrating cell to flow in it along a flow direction. The magnetic field source is configured to provide magnetic force to the migrating cell combined with the immunomagnetic bead. The magnetic force includes at least one magnetic force component and the magnetic force component is opposite to the flow direction of the microchannel. The coherent light source is configured to provide the microchannel with the coherent light. The optical sensing module is configured to receive the interference light caused by the coherent light being reflected by the sample inside the microchannel.

Abstract: A digital-to-analog converter and an operation method thereof are provided. The digital-to-analog converter includes a current source module, a decoder, a change indicator, and a random number generator. The decoder is coupled to the current source module and receives a digital input signal. The change indicator is coupled to the decoder and provides an indication signal to the decoder. The random number generator is coupled to the change indicator and provides a random number signal to the change indicator. The change indicator generates an indication signal according to the random number signal, and the decoder generates a control signal to the current source module according to the digital input signal and the indication signal, so that the current source module generates an analog output signal corresponding to the digital input signal according to the control signal.

Abstract: A probe pin cleaning pad including a foam layer, a cleaning layer, and a polishing layer is provided. The cleaning layer is disposed between the foam layer and the polishing layer. A cleaning method for a probe pin is also provided.

Abstract: Methods, systems and apparatus for memory devices with multiple string select line (SSL) cuts are provided. In one aspect, a semiconductor device includes: a three-dimensional (3D) array of memory cells and a plurality of common source lines (CSLs) configured to separate the 3D array of memory cells into a plurality of portions. Each portion of the plurality of portions is between two adjacent CSLs and includes a plurality of conductive layers separated from each other by insulating layers and a plurality of vertical channels arranged orthogonally through the plurality of conductive layers and the insulating layers, each of the plurality of vertical channels including a string of memory cells. A top part of each portion of one or more portions includes at least two SSL cuts configured to separate the portion into multiple independent units, and each of the independent units is selectable by a corresponding SSL of multiple SSLs.

Abstract: A three-dimensional sensing system includes a plurality of scanners each emitting a light signal to a scene to be sensed and receiving a reflected light signal, according to which depth information is obtained. Only one scanner executes transmitting corresponding light signal and receiving corresponding reflected light signal at a time.

Abstract: The present invention relates to methods for identifying an EoE endotype of a patient and treating the patient with one or more therapies targeted to the patient's disease endotype; and related methods for stratifying patients for clinical trials.

Abstract: Methods of forming a semiconductor device structure are described. In some embodiments, the method includes forming a contact opening in an interlayer dielectric (ILD) layer disposed over an epitaxy source/drain region and forming a metal layer in the contact opening. The metal layer includes top portions, side portions, and a bottom portion, and a space is defined between the top portions of the metal layer. The method further includes performing a gradient metal removal process on the metal layer to enlarge the space, forming a sacrificial layer in the contact opening, recessing the sacrificial layer in the contact opening to expose a portion of the sidewall portions, removing the top portions and the exposed portion of the sidewall portions, removing the sacrificial layer, and forming a bulk metal layer on the bottom portion of the metal layer.

Abstract: The present invention relates to methods for identifying an EoE endotype of a patient and treating the patient with one or more therapies targeted to the patient's disease endotype; and related methods for stratifying patients for clinical trials.

Abstract: A method of fabricating a contact structure includes the following steps. An opening is formed in a dielectric layer. A conductive material layer is formed within the opening and on the dielectric layer, wherein the conductive material layer includes a bottom section having a first thickness and a top section having a second thickness, the second thickness is greater than the first thickness. A first treatment is performed on the conductive material layer to form a first oxide layer on the bottom section and on the top section of the conductive material layer. A second treatment is performed to remove at least portions of the first oxide layer and at least portions of the conductive material layer, wherein after performing the second treatment, the bottom section and the top section of the conductive material layer have substantially equal thickness.