Abstract: A touch sensor includes a resistive layer on a substrate and electrodes on the resistive layer. The electrodes and portions of the resistive layer between the electrodes form series resistor chains disposed at peripheral regions of the touch sensor and surrounding a touch region of the touch sensor. The electrodes are formed by forming a conductive layer on the resistive layer in a thin-film deposition process, followed by patterning the conductive layer into the electrodes. A sheet resistivity of the resistive layer is between about 200? and about 800?. A sheet resistivity of the conductive layer is between about 0.03? and about 0.2?. A ratio of the sheet resistivity of the resistive layer to the sheet resistivity of the conductive layer is between about 2,500 and about 10,000.

Abstract: Provided is an injectable sustained release pharmaceutical formulation, including 3-acyl-naltrexone or a pharmaceutically acceptable salt thereof, a biocompatible organic solvent, and optionally a biocompatible polymeric material. Also provided is a method for treating opioid use disorder or alcoholism, including administering the injectable sustained release pharmaceutical formulation to a subject in need thereof. The pharmaceutical formulation provides a sustained release profile after one single injection, and the plasma levels of naltrexone in minipigs could provide a sustained release for 2 months.

Abstract: A method for obtaining regenerated seedlings of Brassica campestris L. ssp. chinensis from embryonic tip tissues, including the following steps. A seed is inoculated to a germination medium for dark culture for 60 h. The testa, root tip, two cotyledons and middle growing point of the resultant germinated seed are removed, and an embryonic tip with a length of 3-5 mm is retained as an explant. The explant is sequentially subjected to low-temperature pre-culture in a pre-culture medium for 36 h, room-temperature shaking culture in a liquid bud induction culture medium for 10 min, and bud induction culture in a bud induction culture medium for 20 d. A regenerated plant with 5-6 leaves is transferred to a rooting medium for rooting culture for about 2 weeks, and a well-rooted plant is collected, and subjected to hardening and transplantation into a filed.

Abstract: Semiconductor packages and methods of forming the same are disclosed. An semiconductor package includes two dies, an encapsulant, a first metal line and a plurality of dummy vias. The encapsulant is disposed between the two dies. The first metal line is disposed over the two dies and the encapsulant, and electrically connected to the two dies. The plurality of dummy vias is disposed over the encapsulant and aside the first metal line.

Abstract: Gate spacer that improves performance and methods for fabricating such are disclosed herein. An exemplary device includes a gate stack disposed over a semiconductor layer and a gate spacer disposed on a sidewall of the gate stack. A source/drain feature is disposed in the semiconductor layer and adjacent the gate spacer. A low-k contact etch stop layer is disposed on a top surface and a sidewall of the gate spacer and a portion of the gate spacer is disposed between the low-k contact etch stop layer and the semiconductor layer. A source/drain contact is disposed on the source/drain feature and adjacent the low-k contact etch stop layer.

Abstract: A method includes forming a contact spacer on a sidewall of an inter-layer dielectric, wherein the contact spacer encircles a contact opening, forming a silicide region in the opening and on a source/drain region, depositing an adhesion layer extending into the contact opening, and performing a treatment process, so that the contact spacer is treated. The treatment process is selected from the group consisting of an oxidation process, a carbonation process, and combinations thereof. The method further includes depositing a metal barrier over the adhesion layer, depositing a metallic material to fill the contact opening, and performing a planarization process to remove excess portions of the metallic material over the inter-layer dielectric.

Abstract: A tape measure comprises a housing containing a tape, spring, reel, and hub, with first seal(s) to seal between the reel cartridge and the hub and/or to seal between the reel and the housing and/or a part fixed to the housing. An outermost coil of the spring may extend out of an opening in the reel and be attached to an innermost coil of the tape, and a second seal may be provided on the reel, to seal between the spring and the reel where the spring extends from the reel. Alternatively, the spring may be contained within the reel, and an outermost coil of the spring may be attached to an interior of the reel. An exterior of the reel may include an attachment portion to which an innermost coil of the tape is attached. The housing may be openable to enable contaminants to be removed from the housing.

Abstract: A method includes forming a dielectric layer over an epitaxial source/drain region. An opening is formed in the dielectric layer. The opening exposes a portion of the epitaxial source/drain region. A barrier layer is formed on a sidewall and a bottom of the opening. An oxidation process is performing on the sidewall and the bottom of the opening. The oxidation process transforms a portion of the barrier layer into an oxidized barrier layer and transforms a portion of the dielectric layer adjacent to the oxidized barrier layer into a liner layer. The oxidized barrier layer is removed. The opening is filled with a conductive material in a bottom-up manner. The conductive material is in physical contact with the liner layer.

Abstract: A semiconductor structure includes semiconductor layers vertically stacked above a substrate, a gate structure wrapping around each of the semiconductor layers, a gate spacer disposed on sidewalls of the gate structure, a source/drain (S/D) feature abutting the semiconductor layers, and an S/D contact landing on a top surface of the S/D feature. In a cross-sectional view along a lengthwise direction of the semiconductor layers, a topmost point of the top surface of the S/D feature is above a top surface of a topmost one of the semiconductor layers, and a bottommost point of the top surface of the S/D feature is below the top surface of the topmost one of the semiconductor layers.

Abstract: A method includes providing a semiconductor structure including a fin protruding from a substrate, where the fin includes first semiconductor layers and second semiconductor layers, recessing the fin to form a source/drain (S/D) recess, forming an S/D feature in the S/D recess, trimming the S/D feature, depositing a dielectric layer to cover the S/D feature, forming a contact hole in the dielectric layer to expose the S/D feature, and forming a metal contact in the contact hole.

Abstract: A hinge mechanism is provided, including a connecting unit, a hinge unit, and a locking element. The connecting unit has a connecting member and a tubular member. The tubular member is disposed on the connecting member. The hinge unit has a first member, a second member, a shaft, and a rod. The shaft pivotally connects the first member to the second member. The rod is affixed to the second member. The rod extends into the tubular member and has a slot. The locking element is fastened through the tubular member and joined in the slot.

Abstract: A slurry monitoring device, a CMP system and a method of in-line monitoring a slurry are provided. The slurry monitoring device incudes a slurry metrology cell, a plurality of light sources, at least one optical lens, and at least one optical detector. The slurry metrology cell accommodates a slurry. The light sources emit light beams on the slurry in the slurry metrology cell. The at least one optical lens is disposed between the plurality of light sources and the slurry metrology cell. The at least one optical lens modifies a size of a light spot of the light beams impinged on the slurry. The at least one optical detector detects an intensity of the light beams scattered by abrasive particles in the slurry.

Abstract: The invention relates to a composition for promoting the growth of legumes. The composition includes auxin, choline chloride and ?-aminobutyric acid (GABA). The invention also relates to a method for promoting the growth of legumes.

Abstract: A slurry monitoring device, a CMP system and a method of in-line monitoring a slurry are provided. The slurry monitoring device incudes a slurry metrology cell, a plurality of light sources and at least one optical detector. The slurry metrology cell is configured to accommodating a slurry. The light sources are configured to emit light beams on the slurry in the slurry metrology cell. The light sources include a first light source configured to emit a first light beam having a first wavelength, and a second light source configured to emit a second light beam having a second wavelength longer than the first wavelength. The at least one optical detector is configured to detect an intensity of the light beams scattered by abrasive particles in the slurry.

Abstract: The present invention relates to methods for identifying an EoE endotype of a patient and treating the patient with one or more therapies targeted to the patient's disease endotype; and related methods for stratifying patients for clinical trials.

Abstract: Methods of forming a semiconductor device structure are described. In some embodiments, the method includes forming a contact opening in an interlayer dielectric (ILD) layer disposed over an epitaxy source/drain region and forming a metal layer in the contact opening. The metal layer includes top portions, side portions, and a bottom portion, and a space is defined between the top portions of the metal layer. The method further includes performing a gradient metal removal process on the metal layer to enlarge the space, forming a sacrificial layer in the contact opening, recessing the sacrificial layer in the contact opening to expose a portion of the sidewall portions, removing the top portions and the exposed portion of the sidewall portions, removing the sacrificial layer, and forming a bulk metal layer on the bottom portion of the metal layer.

Abstract: The present invention relates to methods for identifying an EoE endotype of a patient and treating the patient with one or more therapies targeted to the patient's disease endotype; and related methods for stratifying patients for clinical trials.

Abstract: A method of fabricating a contact structure includes the following steps. An opening is formed in a dielectric layer. A conductive material layer is formed within the opening and on the dielectric layer, wherein the conductive material layer includes a bottom section having a first thickness and a top section having a second thickness, the second thickness is greater than the first thickness. A first treatment is performed on the conductive material layer to form a first oxide layer on the bottom section and on the top section of the conductive material layer. A second treatment is performed to remove at least portions of the first oxide layer and at least portions of the conductive material layer, wherein after performing the second treatment, the bottom section and the top section of the conductive material layer have substantially equal thickness.

Abstract: A tape measure comprises a housing containing a tape, spring, reel, and hub, with first seal(s) to seal between the reel cartridge and the hub and/or to seal between the reel and the housing and/or a part fixed to the housing. An outermost coil of the spring may extend out of an opening in the reel and be attached to an innermost coil of the tape, and a second seal may be provided on the reel, to seal between the spring and the reel where the spring extends from the reel. Alternatively, the spring may be contained within the reel, and an outermost coil of the spring may be attached to an interior of the reel. An exterior of the reel may include an attachment portion to which an innermost coil of the tape is attached. The housing may be openable to enable contaminants to be removed from the housing.

Abstract: A method includes forming a dielectric layer over an epitaxial source/drain region. An opening is formed in the dielectric layer. The opening exposes a portion of the epitaxial source/drain region. A barrier layer is formed on a sidewall and a bottom of the opening. An oxidation process is performing on the sidewall and the bottom of the opening. The oxidation process transforms a portion of the barrier layer into an oxidized barrier layer and transforms a portion of the dielectric layer adjacent to the oxidized barrier layer into a liner layer. The oxidized barrier layer is removed. The opening is filled with a conductive material in a bottom-up manner. The conductive material is in physical contact with the liner layer.