Abstract: An alternating electric field-driven gallium nitride (GaN)-based nano-light-emitting diode (nanoLED) structure with an electric field enhancement effect is provided. The GaN-based nanoLED structure forms a nanopillar structure that runs through an indium tin oxide (ITO) layer, a p-type GaN layer, a multiple quantum well (MQW) active layer and an n-type GaN layer and reaches a GaN buffer layer; and the nanopillar structure has a cross-sectional area that is smallest at the MQW active layer and gradually increases towards two ends of a nanopillar, forming a pillar structure with a thin middle and two thick ends. The shape of the GaN-based nanopillar improves the electric field strength within the QW layer in the alternating electric field environment and increases the current density in the QW region of the nanopillar structure under current driving, forming strong electric field gain and current gain, thereby improving the luminous efficiency of the device.

Abstract: Systems and methods for thermal treatment of a workpiece are provided. In one example, a method for conducting a treatment process on a workpiece, such as a thermal treatment process, an annealing treatment process, an oxidizing treatment process, or a reducing treatment process in a processing apparatus is provided. The processing apparatus includes a plasma chamber and a processing chamber. The plasma chamber and the processing chamber are separated by a plurality of separation grids or grid plates. The separation grids or grid plates operable to filter ions generated in the plasma chamber. The processing chamber has a workpiece support operable to support a workpiece.

Abstract: Provided is a sequential-pulse single-frequency laser power amplification apparatus, which comprises a sequence control unit for modulating and switching a source laser to output a primary laser, and a power amplification unit for amplifying the primary laser to output a secondary laser. Also provided is a sequence controllable multi-laser system comprising a plurality of single-frequency and/or multi-frequency laser power amplification apparatuses. This allows a single ultra-narrow linewidth laser device to meet the experimental requirements of multiple platforms in an atomic experiment, achieving high performance at low costs.

Abstract: An anode material includes a lithiated silicon oxide material and a MySiOz layer. The lithiated silicon oxide material includes Li2SiO3, Li2Si2O5 or a combination thereof, and the MySiOz layer coats the lithiated silicon oxide material; M includes Mg, Al, Zn, Ca, Ba, B or any combination thereof; and 0<y<3, and 0.5<z<6. The anode material has high first discharge coulombic efficiency, high gram capacity, and good cycle performance.

Abstract: A bit index explicit replication (BIER) operations, administration, and maintenance (OAM) detection method includes a bit forwarding ingress router (BFIR) obtaining a detection request packet based on a first BIER OAM packet, and sending the detection request packet to at least one bit forwarding egress router BFER. The detection request packet includes a first packet and a first packet header. The first packet is a packet obtained by encapsulating the first BIER OAM packet. The first packet header includes a bit string, and the bit string indicates the at least one bit forwarding egress router BFER that is to be measured.

Abstract: A configuration circuit of a flash FPGA for realizing external monitoring and configuration is provided. In the configuration circuit, a positive high-voltage output terminal of a positive high-voltage charge pump is connected to a positive high-voltage external monitoring port through a positive high-voltage bidirectional switch circuit, and the positive high-voltage output terminal of a positive high-voltage charge pump is further configured as a positive output end of a voltage supply circuit. A negative high-voltage output terminal of a negative high-voltage charge pump is connected to a negative high-voltage external monitoring port through a negative high-voltage bidirectional switch circuit, and the negative high-voltage output terminal of a negative high-voltage charge pump is further configured as a negative output end of the voltage supply circuit. Based on a received mode adjustment signal, a mode control circuit controls to enter an external monitoring mode or an external configuration mode.

Abstract: The present application relates to the field of biotechnology, and in particular to a c-Met targeted aptamer drug conjugate. The drug conjugate c-Met-ApDC of the present application can achieve a cytotoxic IC50 of 100 nM in a cell with high expression of c-Met and a tumor model with high expression of c-Met, effectively inhibit a tumor in an animal model, achieve a tumor inhibition rate of 100% for a triple negative breast cancer PDX model, and gain complete regression of a transplanted tumor. The inhibition rate of the drug conjugate administrated subcutaneously to choroidal melanoma as a subcutaneous tumor by tail vein is up to 98.13%, and the inhibition rate of the drug conjugate injected intravitreally into intraocular choroidal melanoma in situ is 100%, which realizes complete regression of the transplanted tumor.

Abstract: Processes treating a workpiece are provided. In one example implementation, a method can include performing an organic radical treatment process on a workpiece. The workpiece includes a photoresist material and a semiconductor material. The organic radical treatment process can include generating one or more species in a first chamber. The treatment process can include flowing one or more hydrocarbon molecules at a flow rate of about 100 sccm to about 15000 sccm into the one or more species to create a mixture. The mixture can include one or more organic radicals. The treatment process can include exposing the workpiece to the mixture in a second chamber. The mixture etches the photoresist material at an etch rate that is greater than an etch rate of the semiconductor material. Devices and systems for processing workpieces are also provided.

Abstract: The method of this disclosure may comprise generating a statement invocation relation for a source code by parsing intermediate representation of the source code produced by a compiler. The method of this disclosure may further comprise in response to a first statement in a first code snippet of the plurality of code snippet being changed, determining affected statements in the source code due to the change of the first statement based on the statement invocation relation.

Abstract: Systems and methods for etching titanium containing layers on a workpiece are provided. In one example, a method includes placing the workpiece on a workpiece support in a processing chamber. The workpiece includes a first layer and a second layer. The first layer is a titanium containing layer. The method includes admitting a process gas into the processing chamber. The process gas includes an ozone gas and a fluorine containing gas. The method includes exposing the first layer and the second layer on the workpiece to the process gas to at least partially etch the first layer at a greater etch rate relative to the second layer.

Abstract: Systems and methods for thermal treatment of a workpiece are provided. In one example, a method for conducting a treatment process on a workpiece, such as a thermal treatment process, an annealing treatment process, an oxidizing treatment process, or a reducing treatment process in a processing apparatus is provided. The processing apparatus includes a plasma chamber and a processing chamber. The plasma chamber and the processing chamber are separated by a plurality of separation grids or grid plates. The separation grids or grid plates operable to filter ions generated in the plasma chamber. The processing chamber has a workpiece support operable to support a workpiece.

Abstract: A method, a system and a computer program product for hybrid computing system management are proposed. In the method, workload information associated with a set of application server instances running in a first computing system is obtained by a server controller in response to a scaling request for changing the number of instances in the set of application server instances from a request controller. The set of application server instances serves at least one application running in a second computing system. A scaling decision indicating whether to change the number of instances in the set of application server instances is determined by a predictor based on the workload information from the server controller. The second computing system is enabled by the request controller to handle requests associated with the at least one application for the set of application server instances based on the scaling decision.

Abstract: Processes for oxidation of a workpiece are provided. In one example, a method includes placing a workpiece on a workpiece support in a processing chamber. The method includes performing a pre-oxidation treatment process on the workpiece in the processing chamber to initiate oxide layer formation on the workpiece. The method includes performing a remote plasma oxidation process on the workpiece in the processing chamber to continue the oxide layer formation on the workpiece. Subsequent to performing the pre-oxidation treatment process and the remote plasma oxidation process, the method can include removing the workpiece from the processing chamber. In some embodiments, the remote plasma oxidation process can include generating a first plasma from a remote plasma oxidation process gas in a plasma chamber; filtering species generated in the plasma to generate a mixture having one or more radicals; and exposing the one or more radicals to the workpiece.

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include placing the workpiece on a workpiece support in a processing chamber. The method can include admitting a process gas into the processing chamber. The process gas can include an ozone gas. The method can include exposing the silicon nitride layer and the low-k dielectric layer to the process gas to modify a surface wetting angle of the silicon nitride layer.

Abstract: Data collection is provided, in which one or more affected transactions related to one or more transaction exceptions are determined. Based on one or more features of the one or more affected transactions, one or more trace features are determined. Based on the one or more trace features, a data collection rule is generated. Data of a subsequent transaction complying with the data collection rule is collected.

Abstract: Systems and methods for etching titanium containing layers on a workpiece are provided. In one example, a method includes placing the workpiece on a workpiece support in a processing chamber. The workpiece includes a first layer and a second layer. The first layer is a titanium containing layer. The method includes admitting a process gas into the processing chamber. The process gas includes an ozone gas and a fluorine containing gas. The method includes exposing the first layer and the second layer on the workpiece to the process gas to at least partially etch the first layer at a greater etch rate relative to the second layer.

Abstract: A monitoring system and a monitoring method thereof are provided. The monitoring system includes a thermal imaging device and a processor. The thermal imaging device obtains a thermal imaging image. The processor is coupled to the thermal imaging device. The processor determines a separating distance between a reference thermal source and a target thermal source in the thermal imaging image. The reference thermal source corresponds to a reference position, and the target thermal source corresponds to a target person. The processor determines a current posture corresponding to the target thermal source in the thermal imaging image. The processor transmits an alarm signal according to the separating distance and the current posture. Accordingly, the misgivings for the privacy violation may be ceased, and it is adapted for low light environment.

Abstract: The present disclosure discloses a thermophilic recombinant type II pullulanase and the application thereof, and belongs to the technical field of genetic engineering. The present disclosure obtains a thermophilic recombinant type II pullulanase by heterologously expressing type II pullulanase in Escherichia coli. Its optimum pH is 6.6, it has better pH tolerance under the conditions of pH 5.8-8.0, and its optimum temperature is 95° C. After incubating at 95° C. for 10 h, the remaining enzyme activity is greater than 50%. It can exhibit higher specific enzyme activity under strong reducing conditions. For example, adding DTT to the culture environment can increase the specific enzyme activity of Sumo-PulPy by 237.2%. The present disclosure also provides the combined truncation mutant ?28N+?791C of type II pullulanase Sumo-PulPy. The specific enzyme activity of the enzyme mutant is 32.18±0.92 U/mg, which is 5.

Abstract: Systems and methods for etching titanium containing layers on a workpiece are provided. In one example, a method includes placing the workpiece on a workpiece support in a processing chamber. The workpiece includes a first layer and a second layer. The first layer is a titanium containing layer. The method includes admitting a process gas into the processing chamber. The process gas includes an ozone gas and a fluorine containing gas. The method includes exposing the first layer and the second layer on the workpiece to the process gas to at least partially etch the first layer at a greater etch rate relative to the second layer.