Abstract: Disclosed is an intelligent control method for a refill-type screw insulin injection pump, including the following steps: starting the refill-type screw insulin injection pump, and filling prefabricated liquid insulin medicine into the refill injection mechanism; operating the key operation module to enable the intelligent control module to control the power device to work; when the primary telescopic screw mechanism extends to a limit, the sensor assembly transmits a signal to the intelligent control module, and the intelligent control module controls a rotational speed of the power device to be slowed down to reduce impact force of the primary telescopic screw mechanism; the refill injection mechanism performs the injection of liquid insulin medicine; and repeating the above steps, and refilling liquid insulin medicine to prepare for the next injection upon completion of the injection of liquid insulin medicine.

Abstract: Systems and methods for thermal treatment of a workpiece are provided. In one example, a method for conducting a treatment process on a workpiece, such as a thermal treatment process, an annealing treatment process, an oxidizing treatment process, or a reducing treatment process in a processing apparatus is provided. The processing apparatus includes a plasma chamber and a processing chamber. The plasma chamber and the processing chamber are separated by a plurality of separation grids or grid plates. The separation grids or grid plates operable to filter ions generated in the plasma chamber. The processing chamber has a workpiece support operable to support a workpiece.

Abstract: Processes treating a workpiece are provided. In one example implementation, a method can include performing an organic radical treatment process on a workpiece. The workpiece includes a photoresist material and a semiconductor material. The organic radical treatment process can include generating one or more species in a first chamber. The treatment process can include flowing one or more hydrocarbon molecules at a flow rate of about 100 sccm to about 15000 sccm into the one or more species to create a mixture. The mixture can include one or more organic radicals. The treatment process can include exposing the workpiece to the mixture in a second chamber. The mixture etches the photoresist material at an etch rate that is greater than an etch rate of the semiconductor material. Devices and systems for processing workpieces are also provided.

Abstract: The method of this disclosure may comprise generating a statement invocation relation for a source code by parsing intermediate representation of the source code produced by a compiler. The method of this disclosure may further comprise in response to a first statement in a first code snippet of the plurality of code snippet being changed, determining affected statements in the source code due to the change of the first statement based on the statement invocation relation.

Abstract: Systems and methods for etching titanium containing layers on a workpiece are provided. In one example, a method includes placing the workpiece on a workpiece support in a processing chamber. The workpiece includes a first layer and a second layer. The first layer is a titanium containing layer. The method includes admitting a process gas into the processing chamber. The process gas includes an ozone gas and a fluorine containing gas. The method includes exposing the first layer and the second layer on the workpiece to the process gas to at least partially etch the first layer at a greater etch rate relative to the second layer.

Abstract: Systems and methods for thermal treatment of a workpiece are provided. In one example, a method for conducting a treatment process on a workpiece, such as a thermal treatment process, an annealing treatment process, an oxidizing treatment process, or a reducing treatment process in a processing apparatus is provided. The processing apparatus includes a plasma chamber and a processing chamber. The plasma chamber and the processing chamber are separated by a plurality of separation grids or grid plates. The separation grids or grid plates operable to filter ions generated in the plasma chamber. The processing chamber has a workpiece support operable to support a workpiece.

Abstract: A method, a system and a computer program product for hybrid computing system management are proposed. In the method, workload information associated with a set of application server instances running in a first computing system is obtained by a server controller in response to a scaling request for changing the number of instances in the set of application server instances from a request controller. The set of application server instances serves at least one application running in a second computing system. A scaling decision indicating whether to change the number of instances in the set of application server instances is determined by a predictor based on the workload information from the server controller. The second computing system is enabled by the request controller to handle requests associated with the at least one application for the set of application server instances based on the scaling decision.

Abstract: Processes for oxidation of a workpiece are provided. In one example, a method includes placing a workpiece on a workpiece support in a processing chamber. The method includes performing a pre-oxidation treatment process on the workpiece in the processing chamber to initiate oxide layer formation on the workpiece. The method includes performing a remote plasma oxidation process on the workpiece in the processing chamber to continue the oxide layer formation on the workpiece. Subsequent to performing the pre-oxidation treatment process and the remote plasma oxidation process, the method can include removing the workpiece from the processing chamber. In some embodiments, the remote plasma oxidation process can include generating a first plasma from a remote plasma oxidation process gas in a plasma chamber; filtering species generated in the plasma to generate a mixture having one or more radicals; and exposing the one or more radicals to the workpiece.

Abstract: Processes for surface treatment of a workpiece are provided. In one example implementation, a method can include placing the workpiece on a workpiece support in a processing chamber. The method can include admitting a process gas into the processing chamber. The process gas can include an ozone gas. The method can include exposing the silicon nitride layer and the low-k dielectric layer to the process gas to modify a surface wetting angle of the silicon nitride layer.

Abstract: Data collection is provided, in which one or more affected transactions related to one or more transaction exceptions are determined. Based on one or more features of the one or more affected transactions, one or more trace features are determined. Based on the one or more trace features, a data collection rule is generated. Data of a subsequent transaction complying with the data collection rule is collected.

Abstract: Systems and methods for etching titanium containing layers on a workpiece are provided. In one example, a method includes placing the workpiece on a workpiece support in a processing chamber. The workpiece includes a first layer and a second layer. The first layer is a titanium containing layer. The method includes admitting a process gas into the processing chamber. The process gas includes an ozone gas and a fluorine containing gas. The method includes exposing the first layer and the second layer on the workpiece to the process gas to at least partially etch the first layer at a greater etch rate relative to the second layer.

Abstract: A monitoring system and a monitoring method thereof are provided. The monitoring system includes a thermal imaging device and a processor. The thermal imaging device obtains a thermal imaging image. The processor is coupled to the thermal imaging device. The processor determines a separating distance between a reference thermal source and a target thermal source in the thermal imaging image. The reference thermal source corresponds to a reference position, and the target thermal source corresponds to a target person. The processor determines a current posture corresponding to the target thermal source in the thermal imaging image. The processor transmits an alarm signal according to the separating distance and the current posture. Accordingly, the misgivings for the privacy violation may be ceased, and it is adapted for low light environment.

Abstract: The present disclosure discloses a thermophilic recombinant type II pullulanase and the application thereof, and belongs to the technical field of genetic engineering. The present disclosure obtains a thermophilic recombinant type II pullulanase by heterologously expressing type II pullulanase in Escherichia coli. Its optimum pH is 6.6, it has better pH tolerance under the conditions of pH 5.8-8.0, and its optimum temperature is 95° C. After incubating at 95° C. for 10 h, the remaining enzyme activity is greater than 50%. It can exhibit higher specific enzyme activity under strong reducing conditions. For example, adding DTT to the culture environment can increase the specific enzyme activity of Sumo-PulPy by 237.2%. The present disclosure also provides the combined truncation mutant ?28N+?791C of type II pullulanase Sumo-PulPy. The specific enzyme activity of the enzyme mutant is 32.18±0.92 U/mg, which is 5.

Abstract: Systems and methods for etching titanium containing layers on a workpiece are provided. In one example, a method includes placing the workpiece on a workpiece support in a processing chamber. The workpiece includes a first layer and a second layer. The first layer is a titanium containing layer. The method includes admitting a process gas into the processing chamber. The process gas includes an ozone gas and a fluorine containing gas. The method includes exposing the first layer and the second layer on the workpiece to the process gas to at least partially etch the first layer at a greater etch rate relative to the second layer.

Abstract: Apparatus and methods for processing a workpiece using a plasma are provided. In one example implementation, an apparatus can include a processing chamber. The apparatus can include a plasma chamber comprising a dielectric tube defining a sidewall. The apparatus can include an inductively coupled plasma source. The inductively coupled plasma source can include an RF generator configured to energize an induction coil disposed about the dielectric tube. The apparatus can include a separation grid separating the processing chamber from the plasma chamber. The apparatus can include a controller configured to operate the inductively coupled plasma source in a pulsed mode. During the pulsed mode the RF generator is configured to apply a plurality of pulses of RF power to the induction coil. A frequency of pulses can be in a range of about 1 kHz to about 100 kHz.

Abstract: Processes for removing photoresist layer(s) from a workpiece, such as a semiconductor are provided. In one example implementation, a method for processing a workpiece can include supporting a workpiece on a workpiece support. The workpiece can have a photoresist layer and a low-k dielectric material layer. The method can include performing a hydrogen radical etch process on the workpiece to remove at least a portion of the photoresist layer. The method can also include exposing the workpiece to an ozone process gas to remove at least a portion of the photoresist layer.

Abstract: Apparatus, systems, and methods for processing a workpiece are provided. In one example implementation, the workpiece can include a silicon nitride layer and a silicon layer. The method can include admitting an ozone gas into a processing chamber. The method can include exposing the workpiece to the ozone gas. The method can include generating one or more species from a process gas using a plasma induced in a plasma chamber. The method can include filtering the one or more species to create a filtered mixture. The method can further include exposing the workpiece to the filtered mixture in the processing chamber such that the filtered mixture at least partially etches the silicon nitride layer more than the silicon layer. Due to ozone gas reacting with surface of silicon layer prior to etching process with fluorine-containing gas, selective silicon nitride etch over silicon can be largely promoted.

Abstract: Systems and methods for etching titanium containing layers on a workpiece are provided. In one example, a method includes placing the workpiece on a workpiece support in a processing chamber. The workpiece includes a first layer and a second layer. The first layer is a titanium containing layer. The method includes admitting a process gas into the processing chamber. The process gas includes an ozone gas and a fluorine containing gas. The method includes exposing the first layer and the second layer on the workpiece to the process gas to at least partially etch the first layer at a greater etch rate relative to the second layer.

Abstract: The described invention provides a method for reducing progression of lung fibrosis after a lung injury comprising administering a therapeutic amount of a therapeutic agent, wherein the therapeutic amount is effective: (a) to modulate expression of a T-box transcription factor in a population of cells in lung; and (b) to reduce proliferation of the population of cells in lung expressing the T-box transcription factor. According to some embodiments the T-box transcription factor is Tbx4.