Abstract: A method of manufacturing a semiconductor package structure is provided. The method includes providing a first carrier, forming a patterned buffer layer over the first carrier, forming a first redistribution structure that includes forming a first dielectric layer on the patterned buffer layer, after an electrical testing by applying an electric signal towards the first redistribution structure, removing the first carrier, removing portions of the first dielectric layer, resulting in a patterned first dielectric layer, the patterned first dielectric layer exposing portions of the first circuit layer, removing the exposed portions of the first circuit layer, using the patterned first dielectric layer as a mask, resulting in a patterned first circuit layer, and forming an electric conductor in a recess defined by the patterned first dielectric layer and the patterned first circuit layer.

Abstract: An electronic package is provided, and the manufacturing method of which is to form a plurality of conductive pillars and dispose an electronic element on a first circuit structure, then cover the plurality of conductive pillars and the electronic element with a cladding layer, and then form a second circuit structure on the cladding layer, so that the plurality of conductive pillars are electrically connected to the first circuit structure and the second circuit structure, and the electronic element is electrically connected to the first circuit structure, where a fan-out redistribution layer is configured in the first circuit structure and the second circuit structure, and at least one ground layer is configured in the second circuit structure. Further, the ground layer includes a plurality of sheet bodies arranged in an array, so that at least one slot is disposed between every two adjacent sheet bodies.

Abstract: A method of manufacturing a semiconductor package structure is provided. The method includes providing a first carrier, forming a patterned buffer layer over the first carrier, forming a first redistribution structure that includes forming a first dielectric layer on the patterned buffer layer, after an electrical testing by applying an electric signal towards the first redistribution structure, removing the first carrier, removing portions of the first dielectric layer, resulting in a patterned first dielectric layer, the patterned first dielectric layer exposing portions of the first circuit layer, removing the exposed portions of the first circuit layer, using the patterned first dielectric layer as a mask, resulting in a patterned first circuit layer, and forming an electric conductor in a recess defined by the patterned first dielectric layer and the patterned first circuit layer.

Abstract: A method of manufacturing a semiconductor package structure is provided. The method includes providing a first carrier, forming a patterned buffer layer over the first carrier, forming a first redistribution structure that includes forming a first dielectric layer on the patterned buffer layer, after an electrical testing by applying an electric signal towards the first redistribution structure, removing the first carrier, removing portions of the first dielectric layer, resulting in a patterned first dielectric layer, the patterned first dielectric layer exposing portions of the first circuit layer, removing the exposed portions of the first circuit layer, using the patterned first dielectric layer as a mask, resulting in a patterned first circuit layer, and forming an electric conductor in a recess defined by the patterned first dielectric layer and the patterned first circuit layer.

Abstract: A method of manufacturing a semiconductor package structure is provided. The method includes providing a first carrier, forming a patterned buffer layer over the first carrier, forming a first redistribution structure that includes forming a first dielectric layer on the patterned buffer layer, after an electrical testing by applying an electric signal towards the first redistribution structure, removing the first carrier, removing portions of the first dielectric layer, resulting in a patterned first dielectric layer, the patterned first dielectric layer exposing portions of the first circuit layer, removing the exposed portions of the first circuit layer, using the patterned first dielectric layer as a mask, resulting in a patterned first circuit layer, and forming an electric conductor in a recess defined by the patterned first dielectric layer and the patterned first circuit layer.

Abstract: A semiconductor device package includes a semiconductor device in an encapsulating layer, an electrical conductor for electrical connection of the semiconductor device to an external device, and a redistribution structure for electrical connection between the semiconductor device and the electrical conductor. The redistribution structure includes dielectric layers stacked on each other in a direction extending between the encapsulating layer and the electrical conductor, wherein the dielectric layer most adjacent to the electrical conductor includes a first pattern under the electrical conductor, and circuit layers each corresponding to a respective one of the dielectric layers.