Abstract: A method includes forming a stack of channel layers and sacrificial layers over a substrate, patterning the stack to form a fin-shape structure, and recessing a portion of the fin-shape structure to form a recess. A top surface of the substrate under the recess is covered at least by a bottommost sacrificial layer of the stack. The method also includes forming inner spacers on terminal ends of the sacrificial layers that are above the bottommost sacrificial layer, depositing an undoped layer in the recess, and forming a doped epitaxial feature over the undoped layer. The undoped layer covers terminal ends of a bottommost channel layer of the stack. The doped epitaxial feature covers terminal ends of the channel layers that are above the bottommost channel layer.

Abstract: A semiconductor device includes a transistor having a source/drain and a gate. The semiconductor device also includes a conductive contact for the transistor. The conductive contact provides electrical connectivity to the source/drain or the gate of the transistor. The conductive contact includes a plurality of barrier layers. The barrier layers have different depths from one another.

Abstract: A semiconductor device includes a transistor having a source/drain and a gate. The semiconductor device also includes a conductive contact for the transistor. The conductive contact provides electrical connectivity to the source/drain or the gate of the transistor. The conductive contact includes a plurality of barrier layers. The barrier layers have different depths from one another.

Abstract: A device includes: a complementary transistor including: a first transistor having a first source/drain region and a second source/drain region; and a second transistor stacked on the first transistor, and having a third source/drain region and a fourth source/drain region, the third source/drain region overlapping the first source/drain region, the fourth source/drain region overlapping the second source/drain region. The device further includes: a first source/drain contact electrically coupled to the third source/drain region; a second source/drain contact electrically coupled to the second source/drain region; a gate isolation structure adjacent the first and second transistors; and an interconnect structure electrically coupled to the first source/drain contact and the second source/drain contact.

Abstract: An example electronic device includes a controller to determine a user touch detection by a power adaptor coupled to the electronic device to operate the electronic device in an AC power mode. The power adaptor may comprise a proximity sensor to detect a user touch for detachment of the power adaptor from the electronic device, and a control circuit to operate a configuration pin in a low output mode to signal user touch detection. The controller may initiate central processing unit (CPU) throttling to reduce power consumption by the electronic device. The controller may further stop CPU throttling in response to detecting that the power adaptor has been detached from the electronic device. Further, the controller may switch the electronic device to a DC power mode to operate using DC power supplied by a battery of the electronic device in response to power adaptor detachment.

Abstract: A fast-transient buffer is shown. The fast-transient buffer has a flipped voltage follower coupled between the input terminal and the output terminal of the fast-transient buffer, and a first MOS transistor coupled to the flipped voltage follower as well as the output terminal of the fast-transient buffer. The first MOS transistor regulates the output voltage of the output terminal of the fast-transient buffer, in the opposite direction in comparison with an output voltage regulation direction due to the flipped voltage follower.

Abstract: The present invention provides an ADC including a first switched capacitor array, a second switched capacitor array, a third switched capacitor array, an integrator and a quantizer. The first switched capacitor array is configured to sample the input signal to generate a first sampled signal. The second switched capacitor array is configured to sample the input signal to generate a second sampled signal and generate a first quantization error. The third switched capacitor array is configured to sample the input signal to generate a third sampled signal and generate a second quantization error. The integrator is configured to receive the first quantization error and the second quantization error in a time-interleaving manner, and integrate the first/second quantization error to generate an integrated quantization error. The quantizer is configured to quantize the first sampled signal by using the integrated quantization error as a reference voltage to generate a digital output signal.

Abstract: The present invention provides an ADC for receiving at least an input signal to generate a digital output signal, wherein the ADC includes an input terminal and a plurality of output terminals, the input terminal is arranged to receive the input signal, and each of the output terminals is configured to output one bit of the digital output signal. The ADC is controlled to operate in a normal mode or a low power mode, and when the ADC operates in the normal mode, all of the output terminals are enabled to output the bits to form the digital output signal; and when the ADC operates in the low power mode, only a portion of the output terminals are enabled to output the bits to form the digital output signal.

Abstract: The present invention provides an ADC including a first switched capacitor array, a second switched capacitor array, a third switched capacitor array, an integrator and a quantizer. The first switched capacitor array is configured to sample the input signal to generate a first sampled signal. The second switched capacitor array is configured to sample the input signal to generate a second sampled signal and generate a first quantization error. The third switched capacitor array is configured to sample the input signal to generate a third sampled signal and generate a second quantization error. The integrator is configured to receive the first quantization error and the second quantization error in a time-interleaving manner, and integrate the first/second quantization error to generate an integrated quantization error. The quantizer is configured to quantize the first sampled signal by using the integrated quantization error as a reference voltage to generate a digital output signal.

Abstract: An antibacterial colloid, comprising: a plurality of metal nanoparticles. wherein the plurality of metal nanoparticles have an average particle diameter less than 10 nm; a plurality of metal ions, wherein the plurality of metal ions have a concentration greater than 20 ppm; and a medium, wherein the medium comprises a protein component containing at least a functional group for reduction, wherein the antibacterial colloid is free from nitrate ions.

Abstract: The present invention provides an ADC for receiving at least an input signal to generate a digital output signal, wherein the ADC includes an input terminal and a plurality of output terminals, the input terminal is arranged to receive the input signal, and each of the output terminals is configured to output one bit of the digital output signal. The ADC is controlled to operate in a normal mode or a low power mode, and when the ADC operates in the normal mode, all of the output terminals are enabled to output the bits to form the digital output signal; and when the ADC operates in the low power mode, only a portion of the output terminals are enabled to output the bits to form the digital output signal.