Abstract: An integrated circuit package including integrated circuit dies with slanted sidewalls and a method of forming are provided. The integrated circuit package may include a first integrated circuit die, a first gap-fill dielectric layer around the first integrated circuit die, a second integrated circuit die underneath the first integrated circuit die, and a second gap-fill dielectric layer around the second integrated circuit die. The first integrated circuit die may include a first substrate, wherein a first angle is between a first sidewall of the first substrate and a bottom surface of the first substrate, and a first interconnect structure on the bottom surface of the first substrate, wherein a second angle is between a first sidewall of the first interconnect structure and the bottom surface of the first substrate. The first angle may be larger than the second angle.

Abstract: An interconnect structure includes a dielectric layer, a first conductive feature, a hard mask layer, a conductive layer, and a capping layer. The first conductive feature is disposed in the dielectric layer. The hard mask layer is disposed on the first conductive feature. The conductive layer includes a first portion and a second portion, the first portion of the conductive layer is disposed over at least a first portion of the hard mask layer, and the second portion of the conductive layer is disposed over the dielectric layer. The hard mask layer and the conductive layer are formed by different materials. The capping layer is disposed on the dielectric layer and the conductive layer.

Abstract: A method for manufacturing a semiconductor structure includes preparing a dielectric structure formed with trenches respectively defined by lateral surfaces of the dielectric structure, forming spacer layers on the lateral surfaces, filling an electrically conductive material into the trenches to form electrically conductive features, selectively depositing a blocking layer on the dielectric structure, selectively depositing a dielectric material on the electrically conductive features to form a capping layer, removing the blocking layer and the dielectric structure to form recesses, forming sacrificial features in the recesses, forming a sustaining layer to cover the sacrificial features; and removing the sacrificial features to obtain the semiconductor structure formed with air gaps confined by the sustaining layer and the spacer layers.

Abstract: A gravity-assisted rotational mechanism and a generator device cooperating therewith. The gravity-assisted rotational mechanism includes multiple concentric rotational members having different sizes and rotatable about the same rotational center, several link members having equal weights for driving the same, and at least one connection member for pivotally connecting the rotational members with the link members. The rotational members can symmetrically push/pull each other. The link members and connection member are respectively mounted on interference sections of at least some of the rotational members to absorb gravitational energy. The energy of the link members is transmitted via the interference sections to the rotational members to form a cycle of energy storage and transmission. The generator device serves to convert the gravitational energy and minimize the rotational inertia loss and increase yield rate of electrical energy.

Abstract: A gravity-assisted rotational mechanism and a generator device cooperating therewith. The gravity-assisted rotational mechanism includes multiple concentric rotational members having different sizes and rotatable about the same rotational center, several link members having equal weights for driving the same, and at least one connection member for pivotally connecting the rotational members with the link members. The rotational members can symmetrically push/pull each other. The link members and connection member are respectively mounted on interference sections of at least some of the rotational members to absorb gravitational energy. The energy of the link members is transmitted via the interference sections to the rotational members to form a cycle of energy storage and transmission, whereby the gravity-assisted rotational mechanism can lastingly continuously rotate as an ornamental device.

Abstract: A gravity-assisted rotational mechanism and a generator device cooperating therewith. The gravity-assisted rotational mechanism includes multiple concentric rotational members having different sizes and rotatable about the same rotational center, several link members having equal weights for driving the same, and at least one connection member for pivotally connecting the rotational members with the link members. The rotational members can symmetrically push/pull each other. The link members and connection member are respectively mounted on interference sections of at least some of the rotational members to absorb gravitational energy. The energy of the link members is transmitted via the interference sections to the rotational members to form a cycle of energy storage and transmission, whereby the gravity-assisted rotational mechanism can lastingly continuously self-rotate as an ornamental device.

Abstract: A gravity-assisted rotational mechanism and a generator device cooperating therewith. The gravity-assisted rotational mechanism includes multiple concentric rotational members having different sizes and rotatable about the same rotational center, several link members having equal weights for driving the same, and at least one connection member for pivotally connecting the rotational members with the link members. The rotational members can symmetrically push/pull each other. The link members and connection member are respectively mounted on interference sections of at least some of the rotational members to absorb gravitational energy. The energy of the link members is transmitted via the interference sections to the rotational members to form a cycle of energy storage and transmission. In condition of low energy loss, the gravity-assisted rotational mechanism forms a continuously swinging self-revolving device for lasting watching.

Abstract: The present invention relates to a method to produce biodegradable polyester, which comprises the following steps: (a) mixing a carbon source, a nitrogen source and water into a reactive material to perform pretreatment; (b) providing a halophilic bacterium, a starting broth and culture with the reactive material; (c) feeding the reactive material; and (d) extracting the polyester from the fermentation broth; wherein, the bacterium has a salt tolerance of 10-30%.

Abstract: The present invention relates to a method to produce biodegradable polyester, which comprises the following steps: (a) mixing a carbon source, a nitrogen source and water into a reactive material to perform pretreatment; (b) providing a halophilic bacterium, a starting broth and culture with the reactive material; (c) feeding the reactive material; and (d) extracting the polyester from the fermentation broth; wherein, the bacterium has a salt tolerance of 10-30%.