Patents by Inventor Ting-Yi Fang

Ting-Yi Fang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9947444
    Abstract: A process for producing a multilayer varistor (MLV) if remained its size unchanged as prior arts is favorable to outstandingly increase overall current-carrying area and improve the performance of final produced MLV; and the MLV has laminated a lower cap, an inner-electrode stack formed from piling up several inner-electrode gaps (g), and an upper cap into a unity, and at least satisfies the condition that the lower cap and the upper cap has a thickness smaller than a thickness of the inner-electrode gap (g), but equal to or greater than 0.1 times of the thickness of the inner-electrode gap (g).
    Type: Grant
    Filed: September 20, 2017
    Date of Patent: April 17, 2018
    Assignee: SFI ELECTRONICS TECHNOLOGY INC.
    Inventors: Ching-Hohn Lien, Jie-An Zhu, Zhi-Xian Xu, Ting-Yi Fang, Hong-Zong Xu
  • Publication number: 20180090248
    Abstract: A process for producing a multilayer varistor (MLV) if remained its size unchanged as prior arts is favorable to outstandingly increase overall current-carrying area and improve the performance of final produced MLV; and the MLV has laminated a lower cap, an inner-electrode stack formed from piling up several inner-electrode gaps (g), and an upper cap into a unity, and at least satisfies the condition that the lower cap and the upper cap has a thickness smaller than a thickness of the inner-electrode gap (g), but equal to or greater than 0.1 times of the thickness of the inner-electrode gap (g).
    Type: Application
    Filed: September 20, 2017
    Publication date: March 29, 2018
    Inventors: Ching-Hohn LIEN, Jie-An ZHU, Zhi-Xian XU, Ting-Yi FANG, Hong-Zong XU
  • Patent number: 8488291
    Abstract: A ZnO surge arrester for high-temperature operation is characterized in that a grain boundary layer between ZnO grains thereof contains a BaTiO3-based positive temperature coefficient thermistor material, which takes 10-85 mol % in the overall grain boundary layer, and when operating temperature raises, the positive temperature coefficient thermistor material in the grain boundary layer has its resistance sharply increasing with the raising temperature, so as to compensate or partially compensate decrease in resistance of components in the grain boundary layer caused by the raising temperature, thereby making the resistance of the grain boundary layer in the ZnO surge arrester more independent of temperature. The ZnO surge arrester thus is suitable for operation where a maximum operating temperature is higher than 125° C., or even higher than 150° C.
    Type: Grant
    Filed: February 9, 2011
    Date of Patent: July 16, 2013
    Assignee: SFI Electronics Technology Inc.
    Inventors: Ching-Hohn Lien, Jie-An Zhu, Zhi-Xian Xu, Xing-Xiang Huang, Ting-Yi Fang
  • Publication number: 20130011963
    Abstract: A process for producing zinc oxide varistors possessed a property of breakdown voltage (V1mA) ranging from 230 to 1,730 V/mm is to perform the doping of zinc oxide and the sintering of zinc oxide grains with a high-impedance sintered powder through two independent procedures, so that the doped zinc oxide and the high-impedance sintered powder are well mixed in a predetermined ratio and then used to make the zinc oxide varistors through conventional technology by low-temperature sintering (lower than 900° C.); the resultant zinc oxide varistors may use pure silver as inner electrode and particularly possess breakdown voltage ranging from 230 to 1,730 V/mm.
    Type: Application
    Filed: September 13, 2012
    Publication date: January 10, 2013
    Applicant: SFI ELECTRONICS TECHNOLOGY INC.
    Inventors: Ching-Hohn LIEN, Jie-An ZHU, Zhi-Xian XU, Hong-Zong XU, Ting-Yi FANG, Xing-Xiang HUANG
  • Publication number: 20120057265
    Abstract: A ZnO surge arrester for high-temperature operation is characterized in that a grain boundary layer between ZnO grains thereof contains a BaTiO3-based positive temperature coefficient thermistor material, which takes 10-85 mol % in the overall grain boundary layer, and when operating temperature raises, the positive temperature coefficient thermistor material in the grain boundary layer has its resistance sharply increasing with the raising temperature, so as to compensate or partially compensate decrease in resistance of components in the grain boundary layer caused by the raising temperature, thereby making the resistance of the grain boundary layer in the ZnO surge arrester more independent of temperature. The ZnO surge arrester thus is suitable for operation where a maximum operating temperature is higher than 125° C., or even higher than 150° C.
    Type: Application
    Filed: February 9, 2011
    Publication date: March 8, 2012
    Applicant: SFI Electronics Technology Inc.
    Inventors: Ching-Hohn LIEN, Jie-An Zhu, Zhi-Xian Xu, Xing-Xiang Huang, Ting-Yi Fang
  • Publication number: 20100117271
    Abstract: A process for producing zinc oxide varistors is to perform the doping of zinc oxide and the sintering of zinc oxide grains with a high-impedance sintering material through two independent procedures, so that the doped zinc oxide and the high-impedance sintering material are well mixed in a predetermined ratio and then used to make the zinc oxide varistors through conventional technology by low-temperature sintering (lower than 900° C.); the resultant zinc oxide varistors may use pure silver as inner electrode and particularly possess one or more of varistor properties, thermistor properties, capacitor properties, inductor properties, piezoelectricity and magnetism.
    Type: Application
    Filed: July 9, 2009
    Publication date: May 13, 2010
    Applicant: SFI Electronics Technology Inc.
    Inventors: Ching-Hohn Lien, Jie-An Zhu, Cheng-Tsung Kuo, Jiu-Nan Lin, Zhi-Xian Xu, Hong-Zong Xu, Ting-Yi Fang, Xing-Xiang Huang