Abstract: A method for removing nodule defects is disclosed. The nodule defects may be formed on a non-selected portion of a semiconductor structure during formation of a semiconductor region on a selected portion of the semiconductor structure. A plasma having a higher selectivity to etch the nodule defects relative to the semiconductor region may be used to selectively remove the nodule defects on the non-selected portion.

Abstract: A method for removing nodule defects is disclosed. The nodule defects may be formed on a non-selected portion of a semiconductor structure during formation of a semiconductor region on a selected portion of the semiconductor structure. A plasma having a higher selectivity to etch the nodule defects relative to the semiconductor region may be used to selectively remove the nodule defects on the non-selected portion.

Abstract: An austenitic steel alloy includes manganese in an amount of from 25 wt % to 31 wt %, aluminum in an amount of from 7 wt % to 10 wt %, carbon in an amount of from 1.2 wt % to 1.6 wt %, molybdenum in an amount of more than 0 wt % and less than 6 wt %, and a balance of iron.

Abstract: A laminated waveguide diplexer includes an upper conductive layer having a first slot and a second slot; a first line crossing over the first slot; a first shielding conductor disposed over the first line; a plurality of first conductive pillars connecting the upper conductive layer and the first shielding conductor; a second line crossing over the second slot; a second shielding conductor disposed over the second line; and a plurality of second conductive pillars connecting the upper conductive layer and the second shielding conductor.

Abstract: A laminated waveguide diplexer includes a first laminated waveguide, a second laminated waveguide, and a coupling metal connecting the first and second laminated waveguides. The first laminated waveguide has a first upper conductor with a first slot, and the second laminated waveguide has a second upper conductor with a second slot. The coupling metal includes a first line crossing over the first slot and a second line crossing over the second slot. In addition, the laminated waveguide diplexer further includes a first via connecting the first upper conductor and the first line, and a second via connecting the second upper conductor and the second line. The first and second vias are adjacent to the first and second slots, respectively, such that the first and second lines are short stubs for respective radio frequency signals propagating thereon.

Abstract: A laminated waveguide diplexer includes a first laminated waveguide, a second laminated waveguide, and a coupling metal connecting the first and second laminated waveguides. The first laminated waveguide has a first upper conductor with a first slot, and the second laminated waveguide has a second upper conductor with a second slot. The coupling metal includes a first line crossing over the first slot and a second line crossing over the second slot. In addition, the laminated waveguide diplexer further includes a first via connecting the first upper conductor and the first line, and a second via connecting the second upper conductor and the second line. The first and second vias are adjacent to the first and second slots, respectively, such that the first and second lines are short stubs for respective radio frequency signals propagating thereon.

Abstract: A laminated waveguide diplexer includes an upper conductive layer having a first slot and a second slot; a first line crossing over the first slot; a first shielding conductor disposed over the first line; a plurality of first conductive pillars connecting the upper conductive layer and the first shielding conductor; a second line crossing over the second slot; a second shielding conductor disposed over the second line; and a plurality of second conductive pillars connecting the upper conductive layer and the second shielding conductor.