Abstract: A miter saw includes a worktable and a cutting unit. The cutting unit includes a movable arm pivotably connected with the worktable, a saw blade, a triggering switch and a tilt power-off module. The movable arm defines a reference plane which intersects a working surface of the worktable at an included angle. The tilt power-off module is disposed to detect the included angle and shift the triggering switch between a power-on state and a power-off state. The triggering switch is shifted to the power-off state when the tilt power-off module detects that the included angle is less than a predetermined breaking angle so as to prevent rotation of the saw blade in a folded position for safety purposes.

Abstract: A negative electrode material, and a negative electrode plate, an electrochemical device, and an electronic device including the same. The negative electrode material includes SiMxCy, where 0.5?x?2, 0.5?y?4, and M includes at least one of boron, nitrogen, oxygen, or aluminum; for SiMxCy, a particle size at a quantity accumulation degree of A % is DNA, a particle size at a volume accumulation degree of B % is DVB, and a half-peak width of a quantity distribution curve is ?DN; and 2 ?m?(DV50?DN50)?6 ?m, and 1?(DN99?DN1)/?DN?1.3. The use of the negative electrode material, and the negative electrode plate, the electrochemical device and the electronic device including the same according to the present application achieve good cycle performance and energy density.

Abstract: A semiconductor device and method of manufacturing a semiconductor device is disclosed herein including creating a photoresist mixture that includes a surfactant, and a base solvent; one or more boiling point modifying solvents having a boiling point higher in temperature than the base solvent; and one or more hydrophilicity modifying solvents that are more hydrophilic than the base solvent; depositing the photoresist mixture onto a substrate comprising a plurality of UBMLs using a wet film process; performing a pre-bake process to cure the photoresist; and patterning the photoresist.

Abstract: A composite negative electrode material includes a Si-M-C composite material and graphene on a surface of the Si-M-C composite material, where M includes at least one of boron, nitrogen, or oxygen. Solid state nuclear magnetic resonance testing of the Si-M-C composite material shows that chemical shifts of element silicon include ?5 ppm±5 ppm, ?35 ppm±5 ppm, ?75 ppm±5 ppm, and ?110 ppm±5 ppm, and a peak width at half height at ?5 ppm±5 ppm satisfies 7 ppm<K<28 ppm. The composite negative electrode material and the negative electrode plate and electrochemical apparatus that use the composite negative electrode material have good cycling performance.

Abstract: The invention relates to anti-EGF like domain multiple 6 antibody (anti-EGFL6 antibody) and cancer detection (or diagnosis) and treatment using the anti-EGFL6 antibody. The present invention creates anti-EGFL6 antibodies, particularly, a single-chain antibody fragments (scFv) and humanized antibody, which have ability in binding to EGFL6 and in inhibiting angiogenesis and cancer cell growth.

Abstract: A method for removing nodule defects is disclosed. The nodule defects may be formed on a non-selected portion of a semiconductor structure during formation of a semiconductor region on a selected portion of the semiconductor structure. A plasma having a higher selectivity to etch the nodule defects relative to the semiconductor region may be used to selectively remove the nodule defects on the non-selected portion.

Abstract: A negative electrode plate includes a current collector and an active substance layer provided on the current collector, where the active substance layer includes a silicon-based material, and a proportion by mass of element silicon in the active substance layer has a minimum value X1 and a maximum value X2 among different locations of a same area size, where a value of X1/X2 is M, and M?0.7; and a weight loss rate of the active substance layer under thermogravimetric (TG) analysis within 800° C. has a minimum value Y1 and a maximum value Y2 among different locations of a same area size, where a value of Y1/Y2 is N, and N?0.7. In this disclosure, the silicon-based material and a binder in the active substance layer are uniformly dispersed, improving C-rate performance and cycling performance of the electrochemical apparatus and reducing swelling of an electrode assembly.

Abstract: An expansion card adapted for an electronic device. The expansion card includes a circuit board and a baffle. The baffle comprises a plate part and a mount part. The plate part is fixed on the circuit board. The mount part is detachably engaged with the plate part and configured to be fixed to the electronic device so as to fix the expansion card to the electronic device.

Abstract: A treadmill with a safety warning function includes a miming unit, a driving unit, a detection unit and a control unit. The running unit includes a driving roller and a running belt provided for a runner to stand thereon. The detection unit includes a camera arranged at a predefined height range on top of the running belt for photographing images. The control unit determines a height of the runner based on the images photographed. The safety monitoring method for the treadmill includes obtaining an image above the running belt and determining whether the height of the runner is greater than the predefined height. By determining whether the height of the runner is greater than the predefined height, it is able to determine whether the driving roller can be driven by the driving unit to rotate, thereby preventing the hazard of accidental activation by a child of insufficient height.

Abstract: A method for video trimming includes: displaying a video trimming interface for a first video in a virtual screen in response to a first input caused by a motion of a head-mounted device when a user moves head, where the video trimming interface includes at least one trimming control; adjusting the at least one trimming control to a first position and a second position that are in the video trimming interface in response to a second input caused by a motion of the head-mounted device when the user moves head; and cutting out content between a first time point corresponding to the first position in the first video and a second time point corresponding to the second position in the first video to obtain a second video, where the first position and the second position are different positions of a same or different trimming controls in the video trimming interface.

Abstract: A shelf tray assembly has a bracket and a partition, where the partition includes a first partition. The bracket includes a sliding rail with a second section and a first section higher than the second section, and there is a first height difference between the first and second sections. The first partition is configured to reciprocate on the bracket along the sliding rail, and a movement path of the first partition includes a first position and a second position. When the first partition is located at the first position, the first partition is supported on the first section. When the first partition is located at the second position, the first partition is supported on the second section. The shelf tray assembly includes a lifting structure. A height difference when the first partition rises or falls can be effectively reduced, and a moving process of the first partition becomes smoother.

Abstract: A support component for a tray component of a refrigeration appliance includes an outer frame, an inner frame, and a reinforcing member. The outer frame has a first open end, the first open end is configured for inserting at least one part of the reinforcing member into the outer frame. The inner frame is connected to the outer frame and at least one part of the reinforcing member is located between the inner frame and the outer frame. The support component with such a structure reduces the probability that the partial structure of a frame is damaged due to the compression of a reinforcing member. The tray component and the refrigeration appliance having the support component have a high product yield and are not likely to fall apart.

Abstract: A refrigeration appliance has a storage box with an open upper end. First and second hanging pins are disposed on a cover plate. The first hanging pin is hung in a first hanger loop and is movable in a front-rear direction and/or an up-down direction in the first hanger loop. The second hanging pin is hung in a second hanger loop and is movable in the front-rear direction and/or the up-down direction in the second hanger loop. The cover plate is movable in the front-rear direction and/or the up-down direction relative to the storage box to at least partially open and close the storage box. The first hanger loop includes an open section that enables the first hanging pin to enter the first hanger loop from the open section and the cover plate of the refrigeration appliance is thereby easy to install.

Abstract: A method for removing nodule defects is disclosed. The nodule defects may be formed on a non-selected portion of a semiconductor structure during formation of a semiconductor region on a selected portion of the semiconductor structure. A plasma having a higher selectivity to etch the nodule defects relative to the semiconductor region may be used to selectively remove the nodule defects on the non-selected portion.

Abstract: A negative electrode material, including an oxygen-containing silicon material. In a Raman spectrum of the oxygen-containing silicon material, IA represents a peak intensity at a corresponding peak position of 140 cm?1±10 cm?1 in the Raman spectrum, ID represents a peak intensity at a corresponding peak position of 470 cm?1±10 cm?1 in the Raman spectrum, and IE represents a peak intensity at a corresponding peak position of 510 cm?1±10 cm?1 in the Raman spectrum; and 0<IA/ID<2, and 0?IE/IA<5. In this way, after the electrochemical device containing the negative electrode material is cycled, all crystalline silicon is converted into non-crystalline silicon, thereby decreasing the volume change of the negative electrode material in the electrochemical device and improving the cycle performance and expansion performance of the electrochemical device.

Abstract: A negative electrode material includes a silicon-based material, or a silicon-based material and graphite. The silicon-based material includes a silicon oxide material and a carbon layer located on a surface of the silicon oxide material. A particle size distribution of the silicon-based material satisfies 1?(Dn99?Dn10)/Dn50?4, Dn10?1 ?m, and Dn50?3 ?m. In the negative electrode material, a number distribution of particle sizes of the silicon-based material can be controlled so that large and small particles are better matched, thereby improving cycling performance of an electrochemical apparatus.

Abstract: A negative electrode includes a negative current collector, a first negative active material layer and a second negative active material layer. The first negative active material layer is arranged on one side of a first portion of the negative current collector, and the second negative active material layers are arranged on two sides of a second portion, different from the first portion, of the negative current collector. A ratio of a weight per unit area of the first negative active material layer to a weight per unit area of the second negative active material layer on the negative current collector is 0.47 to 0.52, and a ratio of a compacted density of the first negative active material layer to a compacted density of the second negative active material layer is 0.9 to 1.1.

Abstract: A negative electrode composite material includes a Si—M—C composite material. A conductive layer exists on a surface of the Si—M—C composite material, M includes at least one of boron, nitrogen, or oxygen. Chemical shifts of a silicon element in the Si—M?C composite material as measured in a solid-state nuclear magnetic resonance test include ?5 ppm±5 ppm, ?35 ppm±5 ppm, ?75 ppm±5 ppm, ?110 ppm±5 ppm. A peak width at half height at ?5 ppm±5 ppm is K, and K satisfies: 7 ppm<K<28 ppm. The negative electrode composite material exhibits a relatively low expansion rate and a relatively high conductivity.

Abstract: A high throughput lensless imaging method and system thereof are provided. The system mainly includes a light source, an optical panel, and an optical image sensing module. The light source is used to generate light with a specific wavelength to illuminate. The optical panel corresponds to the light source and includes an optical pinhole that corresponds to the light source such that the light generated by the light source passes through the optical pinhole. The position of the optical image sensing module corresponds to the other surface of the optical panel, and the optical image sensing module includes a sensing unit to receive an optical diffraction signal formed after the light source illuminates an object. The sensing unit is electrically connected to a computing unit that is used to compute after receiving the optical diffraction signal transmitted by the sensing unit, so as to perform the computation and reconstruction of an image.

Abstract: Disclosed is an optical system using image restoration, including a light source, a pinhole, a testing platform, an image sensor and an image processing device. The pinhole is disposed on a light transmission path of the light source. The testing platform is disposed on the light transmission path of the light source and the pinhole is located between the light source and the testing platform. The testing platform is used to place a testing sample. The image sensor is disposed below the testing platform, and used to sense the testing sample so as to output an optical diffraction signal. The image processing device is electrically connected to the image sensor and used to perform signal processing and optical signal recognition on the optical diffraction signal of the testing sample so as to obtain a clear image of the testing sample.