Abstract: An electronic device includes a back board, plurality of light emitting units arranged on the base, an optical film arranged on the plurality of light emitting units, and a reflective component arranged on the base and including a first surface. The back board includes a base, a side portion, and a top portion, wherein in a cross section view, an extension direction of the side portion is different from an extension direction of the base and an extension direction of the top portion; wherein an end of the side portion is connected to the base and another end of the side portion is connected to the top portion.

Abstract: A plating membrane includes a support structure extending radially outward from a nozzle that is to direct a flow of a plating solution toward a wafer. The plating membrane also includes a frame, supported by the support structure, having an inner wall that is angled outward from the nozzle. The outward angle of the inner wall relative to the nozzle directs a flow of plating solution from the nozzle in a manner that increases uniformity of the flow of the plating solution toward the wafer, reduces the amount of plating solution that is redirected inward toward the center of the plating membrane, reduces plating material voids in trenches of the wafer (e.g., high aspect ratio trenches), and/or the like.

Abstract: A backlight module includes a back board, a lamp board, a wavelength conversion film, an optical film, a coating layer and a reflective component. The back board includes a side wall. The lamp board is arranged on the back board, and includes plural light emitting units. The wavelength conversion film is arranged on the light emitting units. The optical film is arranged on the wavelength conversion film. The coating layer is arranged on the optical film, and adjacent to the optical film. The reflective component is arranged between the side wall and the optical film, and surrounds the wavelength conversion film and the optical film. At an optical wavelength of 450 nanometers, a brightness of a first surface of the reflective component is between 70 and 100, a first chromaticity thereof is between ?10 and 10, and a second chromaticity thereof is between ?10 and 10.

Abstract: A signal quality optimization system and a signal quality optimization method are provided.

Abstract: An electronic device includes a light-emitting module including a substrate, a plurality of light-emitting units, and a light-adjusting layer. The substrate has a first region and a second region, the second region being closer to the edge of the substrate than the first region. The light-emitting units are disposed on the substrate, wherein the light-emitting units include a first light-emitting unit disposed in the first region and a second light-emitting unit disposed in the second region. The light-adjusting layer includes a first light-adjusting element disposed on the first light-emitting unit and a second light-adjusting element disposed on the second light-emitting unit. The first light-adjusting element and the second light-adjusting element have different dimensions.

Abstract: A semiconductor device and a method of forming the same is disclosed. The semiconductor device includes a substrate, a first well region disposed within the substrate, a second well region disposed adjacent to the first well region and within the substrate, and an array of well regions disposed within the first well region. The first well region includes a first type of dopants, the second well region includes a second type of dopants that is different from the first type of dopants, and the array of well regions include the second type of dopants. The semiconductor device further includes a metal silicide layer disposed on the array of well regions and within the substrate, a metal silicide nitride layer disposed on the metal silicide layer and within the substrate, and a contact structure disposed on the metal silicide nitride layer.

Abstract: An electronic system test method, comprising: (a) inputting a victim test pattern to a victim signal path of a target electronic system and simultaneously inputting at least one aggressor test pattern to at least one aggressor signal path of the target electronic system, according to a major set of test patterns comprising a plurality of minor set of test patterns; (b) acquiring a output response corresponding to the step (a); and (c) after changing the victim test pattern or the aggressor test pattern, and after repeating the step (a) and the step (b) until all of the major test patterns set are used thereby acquiring a plurality of the output responses, determining a combination level according to the output responses. The victim test pattern is an X bit pattern and the aggressor test pattern is a Y bit pattern, X and Y are positive integers larger than or equal to 3.

Abstract: A semiconductor device and a method of forming the same is disclosed. The semiconductor device includes a substrate, a first well region disposed within the substrate, a second well region disposed adjacent to the first well region and within the substrate, and an array of well regions disposed within the first well region. The first well region includes a first type of dopants, the second well region includes a second type of dopants that is different from the first type of dopants, and the array of well regions include the second type of dopants. The semiconductor device further includes a metal silicide layer disposed on the array of well regions and within the substrate, a metal silicide nitride layer disposed on the metal silicide layer and within the substrate, and a contact structure disposed on the metal silicide nitride layer.

Abstract: A backlight module includes a back board, a lamp board, a wavelength conversion film, an optical film, a coating layer and a reflective component. The back board includes a side wall. The lamp board is arranged on the back board, and includes plural light emitting units. The wavelength conversion film is arranged on the light emitting units. The optical film is arranged on the wavelength conversion film. The coating layer is arranged on the optical film, and adjacent to the optical film. The reflective component is arranged between the side wall and the optical film, and surrounds the wavelength conversion film and the optical film. At an optical wavelength of 450 nanometers, a brightness of a first surface of the reflective component is between 70 and 100, a first chromaticity thereof is between ?10 and 10, and a second chromaticity thereof is between ?10 and 10.

Abstract: A plating membrane includes a support structure extending radially outward from a nozzle that is to direct a flow of a plating solution toward a wafer. The plating membrane also includes a frame, supported by the support structure, having an inner wall that is angled outward from the nozzle. The outward angle of the inner wall relative to the nozzle directs a flow of plating solution from the nozzle in a manner that increases uniformity of the flow of the plating solution toward the wafer, reduces the amount of plating solution that is redirected inward toward the center of the plating membrane, reduces plating material voids in trenches of the wafer (e.g., high aspect ratio trenches), and/or the like.

Abstract: An electronic device includes a light emitting module, a beam splitting film and a diffuser plate. The light emitting module provides a light having a first waveband. The beam splitting film is arranged on the light emitting module. The diffuser plate is arranged on the light emitting module, wherein the beam splitting film is arranged between the light emitting module and the diffuser plate. The beam splitting film has a first transmittance for the first waveband, and the beam splitting film has a second transmittance for a second waveband other than the first waveband, where the first transmittance is greater than the second transmittance.

Abstract: A method for performing memory calibration and an associated System on Chip (SoC) Integrated Circuit (IC) are provided. The method may include: in a power-up and initialization phase, controlling a physical layer (PHY) circuit within the SoC IC to apply power to a memory through a pad set and perform initialization on the memory; in an impedance-calibration-related phase, triggering the memory to perform impedance calibration regarding a set of data pins; in at least one subsequent phase, during performing any calibration operation among a reading-related calibration operation and a writing-related calibration operation, performing a data access test corresponding to a set of test points on a predetermined mask, wherein the predetermined mask is movable with respect to a data eye; and according to whether the data access test is successful, selectively stopping the any calibration operation.

Abstract: A plating membrane includes a support structure extending radially outward from a nozzle that is to direct a flow of a plating solution toward a wafer. The plating membrane also includes a frame, supported by the support structure, having an inner wall that is angled outward from the nozzle. The outward angle of the inner wall relative to the nozzle directs a flow of plating solution from the nozzle in a manner that increases uniformity of the flow of the plating solution toward the wafer, reduces the amount of plating solution that is redirected inward toward the center of the plating membrane, reduces plating material voids in trenches of the wafer (e.g., high aspect ratio trenches), and/or the like.

Abstract: The present invention provides an electronic device including a storage device and a processor. The storage device includes a program code and a database, wherein the database includes a plurality of combinations of printed circuit boards and packages and a plurality of channel models. The processor is configured to execute the program code to perform the steps of: obtaining a first combination of the plurality of combinations of printed circuit boards and packages from the database; obtaining a first channel model of the plurality of channel models from the database, wherein the first channel model is generated according to the first combination; determining first die information; and performing simulation to generate characteristics of a power delivery network and a voltage drop of a system according to the first channel model and the first die information.

Abstract: A power line structure includes a dielectric layer, a first conductive component, a second conductive component, and a third conductive component. The first conductive component is disposed at a first side of the dielectric layer. The second conductive component is disposed at the first side of the dielectric layer. The third conductive component is disposed at the first side of the dielectric layer and between the first conductive component and the second conductive component. Each of the voltage of the first conductive component and the second conductive component is equal to a ground voltage. The third conductive component is configured to receive a first power voltage.

Abstract: The disclosure provides an electronic device including a substrate, a light-emitting unit and a first diffusion element. The light-emitting unit is disposed on the substrate. The first diffusion element is disposed on the light-emitting unit and includes a first surface. The first surface has a plurality of first microstructure monomers. The plurality of first microstructure monomers are disposed in a first direction and a second direction, and the first direction is different from the second direction. The electronic device according to the embodiments of the disclosure is capable of improving the problem of film grains or enhancing the visual effect.

Abstract: A layout method is configured to design a layout of a bridging circuit between source circuit and a destination circuit of a circuit system. The layout method includes: categorizing the bridging circuit into sub-regions according to physical structural characteristics; obtaining default sub-region model units corresponding to the sub-regions from a database; setting the default sub-region model units by the parameters to obtain sub-region models; extracting, using an electromagnetic simulation software, electrical models from the sub-region models, respectively; connecting the sub-region models to obtain, using a circuit simulation software an entire electrical model; evaluating whether the entire electrical model meets a specific requirement of the bridging circuit with respect to the circuit system; and when the entire electrical model meets the specific requirement, obtaining a layout rule according to the sub-region models.

Abstract: An electronic system test method, comprising: (a)inputting a victim test pattern to a victim signal path of a target electronic system and simultaneously inputting at least one aggressor test pattern to at least one aggressor signal path of the target electronic system, according to a major set of test patterns comprising a plurality of minor set of test patterns; (b)acquiring a output response corresponding to the step (a); and (c)after changing the victim test pattern or the aggressor test pattern, and after repeating the step (a) and the step (b) until all of the major test patterns set are used thereby acquiring a plurality of the output responses, determining a combination level according to the output responses. The victim test pattern is an X bit pattern and the aggressor test pattern is a Y bit pattern, X and Y are positive integers larger than or equal to 3.

Abstract: A method for performing memory calibration and an associated System on Chip (SoC) Integrated Circuit (IC) are provided. The method may include: in a power-up and initialization phase, controlling a physical layer (PHY) circuit within the SoC IC to apply power to a memory through a pad set and perform initialization on the memory; in an impedance-calibration-related phase, triggering the memory to perform impedance calibration regarding a set of data pins; in at least one subsequent phase, during performing any calibration operation among a reading-related calibration operation and a writing-related calibration operation, performing a data access test corresponding to a set of test points on a predetermined mask, wherein the predetermined mask is movable with respect to a data eye; and according to whether the data access test is successful, selectively stopping the any calibration operation.

Abstract: A semiconductor device and a method of forming the same is disclosed. The semiconductor device includes a substrate, a first well region disposed within the substrate, a second well region disposed adjacent to the first well region and within the substrate, and an array of well regions disposed within the first well region. The first well region includes a first type of dopants, the second well region includes a second type of dopants that is different from the first type of dopants, and the array of well regions include the second type of dopants. The semiconductor device further includes a metal silicide layer disposed on the array of well regions and within the substrate, a metal silicide nitride layer disposed on the metal silicide layer and within the substrate, and a contact structure disposed on the metal silicide nitride layer.