Abstract: A backlight module includes a back board, a lamp board, a wavelength conversion film, an optical film, a coating layer and a reflective component. The back board includes a side wall. The lamp board is arranged on the back board, and includes plural light emitting units. The wavelength conversion film is arranged on the light emitting units. The optical film is arranged on the wavelength conversion film. The coating layer is arranged on the optical film, and adjacent to the optical film. The reflective component is arranged between the side wall and the optical film, and surrounds the wavelength conversion film and the optical film. At an optical wavelength of 450 nanometers, a brightness of a first surface of the reflective component is between 70 and 100, a first chromaticity thereof is between ?10 and 10, and a second chromaticity thereof is between ?10 and 10.

Abstract: A plating membrane includes a support structure extending radially outward from a nozzle that is to direct a flow of a plating solution toward a wafer. The plating membrane also includes a frame, supported by the support structure, having an inner wall that is angled outward from the nozzle. The outward angle of the inner wall relative to the nozzle directs a flow of plating solution from the nozzle in a manner that increases uniformity of the flow of the plating solution toward the wafer, reduces the amount of plating solution that is redirected inward toward the center of the plating membrane, reduces plating material voids in trenches of the wafer (e.g., high aspect ratio trenches), and/or the like.

Abstract: An electronic device includes a light emitting module, a beam splitting film and a diffuser plate. The light emitting module provides a light having a first waveband. The beam splitting film is arranged on the light emitting module. The diffuser plate is arranged on the light emitting module, wherein the beam splitting film is arranged between the light emitting module and the diffuser plate. The beam splitting film has a first transmittance for the first waveband, and the beam splitting film has a second transmittance for a second waveband other than the first waveband, where the first transmittance is greater than the second transmittance.

Abstract: A method for performing memory calibration and an associated System on Chip (SoC) Integrated Circuit (IC) are provided. The method may include: in a power-up and initialization phase, controlling a physical layer (PHY) circuit within the SoC IC to apply power to a memory through a pad set and perform initialization on the memory; in an impedance-calibration-related phase, triggering the memory to perform impedance calibration regarding a set of data pins; in at least one subsequent phase, during performing any calibration operation among a reading-related calibration operation and a writing-related calibration operation, performing a data access test corresponding to a set of test points on a predetermined mask, wherein the predetermined mask is movable with respect to a data eye; and according to whether the data access test is successful, selectively stopping the any calibration operation.

Abstract: A plating membrane includes a support structure extending radially outward from a nozzle that is to direct a flow of a plating solution toward a wafer. The plating membrane also includes a frame, supported by the support structure, having an inner wall that is angled outward from the nozzle. The outward angle of the inner wall relative to the nozzle directs a flow of plating solution from the nozzle in a manner that increases uniformity of the flow of the plating solution toward the wafer, reduces the amount of plating solution that is redirected inward toward the center of the plating membrane, reduces plating material voids in trenches of the wafer (e.g., high aspect ratio trenches), and/or the like.

Abstract: The present invention provides an electronic device including a storage device and a processor. The storage device includes a program code and a database, wherein the database includes a plurality of combinations of printed circuit boards and packages and a plurality of channel models. The processor is configured to execute the program code to perform the steps of: obtaining a first combination of the plurality of combinations of printed circuit boards and packages from the database; obtaining a first channel model of the plurality of channel models from the database, wherein the first channel model is generated according to the first combination; determining first die information; and performing simulation to generate characteristics of a power delivery network and a voltage drop of a system according to the first channel model and the first die information.

Abstract: A power line structure includes a dielectric layer, a first conductive component, a second conductive component, and a third conductive component. The first conductive component is disposed at a first side of the dielectric layer. The second conductive component is disposed at the first side of the dielectric layer. The third conductive component is disposed at the first side of the dielectric layer and between the first conductive component and the second conductive component. Each of the voltage of the first conductive component and the second conductive component is equal to a ground voltage. The third conductive component is configured to receive a first power voltage.

Abstract: The disclosure provides an electronic device including a substrate, a light-emitting unit and a first diffusion element. The light-emitting unit is disposed on the substrate. The first diffusion element is disposed on the light-emitting unit and includes a first surface. The first surface has a plurality of first microstructure monomers. The plurality of first microstructure monomers are disposed in a first direction and a second direction, and the first direction is different from the second direction. The electronic device according to the embodiments of the disclosure is capable of improving the problem of film grains or enhancing the visual effect.

Abstract: A layout method is configured to design a layout of a bridging circuit between source circuit and a destination circuit of a circuit system. The layout method includes: categorizing the bridging circuit into sub-regions according to physical structural characteristics; obtaining default sub-region model units corresponding to the sub-regions from a database; setting the default sub-region model units by the parameters to obtain sub-region models; extracting, using an electromagnetic simulation software, electrical models from the sub-region models, respectively; connecting the sub-region models to obtain, using a circuit simulation software an entire electrical model; evaluating whether the entire electrical model meets a specific requirement of the bridging circuit with respect to the circuit system; and when the entire electrical model meets the specific requirement, obtaining a layout rule according to the sub-region models.

Abstract: An electronic system test method, comprising: (a)inputting a victim test pattern to a victim signal path of a target electronic system and simultaneously inputting at least one aggressor test pattern to at least one aggressor signal path of the target electronic system, according to a major set of test patterns comprising a plurality of minor set of test patterns; (b)acquiring a output response corresponding to the step (a); and (c)after changing the victim test pattern or the aggressor test pattern, and after repeating the step (a) and the step (b) until all of the major test patterns set are used thereby acquiring a plurality of the output responses, determining a combination level according to the output responses. The victim test pattern is an X bit pattern and the aggressor test pattern is a Y bit pattern, X and Y are positive integers larger than or equal to 3.

Abstract: A method for performing memory calibration and an associated System on Chip (SoC) Integrated Circuit (IC) are provided. The method may include: in a power-up and initialization phase, controlling a physical layer (PHY) circuit within the SoC IC to apply power to a memory through a pad set and perform initialization on the memory; in an impedance-calibration-related phase, triggering the memory to perform impedance calibration regarding a set of data pins; in at least one subsequent phase, during performing any calibration operation among a reading-related calibration operation and a writing-related calibration operation, performing a data access test corresponding to a set of test points on a predetermined mask, wherein the predetermined mask is movable with respect to a data eye; and according to whether the data access test is successful, selectively stopping the any calibration operation.

Abstract: A semiconductor device and a method of forming the same is disclosed. The semiconductor device includes a substrate, a first well region disposed within the substrate, a second well region disposed adjacent to the first well region and within the substrate, and an array of well regions disposed within the first well region. The first well region includes a first type of dopants, the second well region includes a second type of dopants that is different from the first type of dopants, and the array of well regions include the second type of dopants. The semiconductor device further includes a metal silicide layer disposed on the array of well regions and within the substrate, a metal silicide nitride layer disposed on the metal silicide layer and within the substrate, and a contact structure disposed on the metal silicide nitride layer.

Abstract: An electromagnetic band gap structure apparatus includes a first conducting layer having at least one first slot. Each of the at least one slot is arranged with a planar conductor unit, and the each planar conductor unit is coupled to a first via. The electromagnetic band gap structure apparatus further includes a second conducting layer in parallel with the first conducting layer. The second conducting layer has a second slot. The second slot is arranged with at least one planar transmission line unit. The each of the at least one planar transmission line unit is coupled to the first conducting layer through a second via, and the each first via is coupled to the second conducting layer.

Abstract: An electronic package structure and a chip thereof are provided. The electronic package structure includes a substrate, a chip, a plurality of signal wires, and a core ground wire. The chip disposed on and electrically connected to the substrate has a core wiring region and an input and output pad region located at a top surface thereof. The input and output pad region is located between the core wiring region and an edge of the chip. The chip includes a plurality of signal pads in the input and output region and a core ground pad adjacent to one of the signal pads. The core ground pad located in the core wiring region. The signal wires are respectively connected to the signal pads. The core ground wire connected to the core ground pad is adjacent to and shields one of the signal wires.

Abstract: A plating membrane includes a support structure extending radially outward from a nozzle that is to direct a flow of a plating solution toward a wafer. The plating membrane also includes a frame, supported by the support structure, having an inner wall that is angled outward from the nozzle. The outward angle of the inner wall relative to the nozzle directs a flow of plating solution from the nozzle in a manner that increases uniformity of the flow of the plating solution toward the wafer, reduces the amount of plating solution that is redirected inward toward the center of the plating membrane, reduces plating material voids in trenches of the wafer (e.g., high aspect ratio trenches), and/or the like.

Abstract: A power line structure includes a dielectric layer, a first conductive component, a second conductive component, and a third conductive component. The first conductive component is disposed at a first side of the dielectric layer. The second conductive component is disposed at the first side of the dielectric layer. The third conductive component is disposed at the first side of the dielectric layer and between the first conductive component and the second conductive component. Each of the voltage of the first conductive component and the second conductive component is equal to a ground voltage. The third conductive component is configured to receive a first power voltage.

Abstract: An electromagnetic band gap structure apparatus includes a first conducting layer having at least one first slot. Each of the at least one slot is arranged with a planar conductor unit, and the each planar conductor unit is coupled to a first via. The electromagnetic band gap structure apparatus further includes a second conducting layer in parallel with the first conducting layer. The second conducting layer has a second slot. The second slot is arranged with at least one planar transmission line unit. The each of the at least one planar transmission line unit is coupled to the first conducting layer through a second via, and the each first via is coupled to the second conducting layer.

Abstract: A memory device that includes a driver IC, a voltage-dividing resistor, at least two noise-suppressing resistors and at least three memory ICs is provided. A terminal of the voltage-dividing resistor is electrically coupled to a voltage source and another other terminal of the voltage-dividing resistor is electrically coupled to the driver IC through an end a connection path. One of the memory ICs is electrically coupled to the voltage-dividing resistor and the driver IC through the end the connection path. Each of at least two of the other memory ICs is electrically coupled to the connection path through one of the noise-suppressing resistors and is further electrically coupled to the driver IC.

Abstract: An electronic package structure and a chip thereof are provided. The electronic package structure includes a substrate, a chip, a plurality of signal wires, and a core ground wire. The chip disposed on and electrically connected to the substrate has a core wiring region and an input and output pad region located at a top surface thereof. The input and output pad region is located between the core wiring region and an edge of the chip. The chip includes a plurality of signal pads in the input and output region and a core ground pad adjacent to one of the signal pads. The core ground pad located in the core wiring region. The signal wires are respectively connected to the signal pads. The core ground wire connected to the core ground pad is adjacent to and shields one of the signal wires.

Abstract: A memory device that includes a driver IC, a voltage-dividing resistor, at least two noise-suppressing resistors and at least three memory ICs is provided. A terminal of the voltage-dividing resistor is electrically coupled to a voltage source and another other terminal of the voltage-dividing resistor is electrically coupled to the driver IC through an end a connection path. One of the memory ICs is electrically coupled to the voltage-dividing resistor and the driver IC through the end the connection path. Each of at least two of the other memory ICs is electrically coupled to the connection path through one of the noise-suppressing resistors and is further electrically coupled to the driver IC.