Abstract: An electrostatic discharge protection device is provided. The electrostatic discharge protection device includes an N-type deep well region (DNW), first and second high-voltage P- and N-type well regions (first and second HVPW and HVNW), a low-voltage N-type well region (LVNW), first and second P- and first N-type doped regions in a P-type semiconductor substrate, and a gate structure. The first and second HVPW and HVNW are located on the DNW. The LVNW is located on the first HVPW. The first P- and N-type doped regions and second P-type doped region are located on the LVNW and the second HVNW and HVPW. The first P-type doped region is electrically connected to a first voltage source. The gate structure on the first and second HVPW and the first HVNW, the second P-type doped region and the first N-type doped region are electrically connected to a second voltage source.

Abstract: An ESD protection device includes a substrate, an epitaxial layer, first to third well regions, and first to sixth doped regions. The first to third well regions are disposed in the epitaxial layer. The third well region is disposed between the first and second well regions. The first and second doped regions are disposed on the first well region and coupled to a pad. The third and fourth doped regions are disposed on the second well region and coupled to a ground terminal. The fifth doped region is disposed on the third well region, and the sixth doped region is disposed in the fifth doped region. The third, fifth, and sixth doped regions have the same conductive type. In response to an electrostatic discharge event occurring on the pad, a discharge path is formed between the pad and the ground terminal.

Abstract: An ESD protection circuit is coupled to a first pad and includes an ESD detection circuit, a P-type transistor, an N-type transistor, and a discharge circuit. The ESD detection circuit determines whether an ESD event occurs on the first pad to generate a detection signal at a first node. The P-type transistor comprises a source coupled to the first pad, a drain coupled to a second node, and a gate coupled to the first node. The N-type transistor comprises a drain coupled to the second node, a source coupled to a ground, and a gate coupled to a second pad. The discharge circuit is coupled between the first pad and the ground and controlled by a driving signal at the second node. When the ESD protection circuit is in an operation mode, the first pad receives a first voltage, and a second pad receives a second voltage.

Abstract: An electrostatic discharge (ESD) protection device is provided. A deep-well region is formed on a substrate. A first well region, a second well region, a third well region, and a fourth well region are formed on the deep-well region. A fifth well region is formed in the fourth well region. A first doped region is formed in the first well region. A second doped region is formed in the second well region. A third doped region is formed in the fourth well region. A gate structure covers the third well region. Each of the substrate, the second well region, the fourth well region, the second doped region, and the third doped region has a first conductivity type. Each of the deep-well region, the first well region, the third well region, the fifth well region, and the first doped region has a second conductivity type.

Abstract: A device and a method of flattening recycled carbon fiber material are provided. A main body is provided with two flat plates at an upper and a lower positions corresponding to each other and an ultrasonic unit is disposed on each of the flat plates. While in use, recycled carbon fiber material is placed at the lower flat plate and then at least one ultrasonic probe of the ultrasonic unit is driven to work and vibrate the recycled carbon fiber material into a flat and thin state. After the flattened recycled carbon fiber material being pressurized to form products required, the product has flat and smooth surfaces with special textures. A thickness of the product can be controlled and the product can be thinned according to users' needs, without surface treatment such as grinding, polishing, etc. Thereby production cost is reduced and yield rate of the products is improved.

Abstract: An ESD protection device includes a substrate, an epitaxial layer, first to third well regions, and first to sixth doped regions. The first to third well regions are disposed in the epitaxial layer. The third well region is disposed between the first and second well regions. The first and second doped regions are disposed on the first well region and coupled to a pad. The third and fourth doped regions are disposed on the second well region and coupled to a ground terminal. The fifth doped region is disposed on the third well region, and the sixth doped region is disposed in the fifth doped region. The third, fifth, and sixth doped regions have the same conductive type. In response to an electrostatic discharge event occurring on the pad, a discharge path is formed between the pad and the ground terminal.

Abstract: A semiconductor structure is provided. At least one first well region is disposed in a semiconductor substrate and has a first conductivity type. At least one gate of a transistor is disposed over the first well region and extends in a first direction. At least one second well region and at least one third well region are disposed on opposite sides of the first well region and extend in the first direction. The second and third well regions have a second conductivity type. A first shielding structure is disposed on at least one end of the gate and partially overlaps the first well region in a vertical projection direction. The first shielding structure is separated from the end of the gate. A bulk ring is disposed in the semiconductor substrate and surrounds the gate, the second well region, the third well region, and the first shielding structure.

Abstract: A device and a method of flattening recycled carbon fiber material are provided. A main body is provided with two flat plates at an upper and a lower positions corresponding to each other and an ultrasonic unit is disposed on each of the flat plates. While in use, recycled carbon fiber material is placed at the lower flat plate and then at least one ultrasonic probe of the ultrasonic unit is driven to work and vibrate the recycled carbon fiber material into a flat and thin state. After the flattened recycled carbon fiber material being pressurized to form products required, the product has flat and smooth surfaces with special textures. A thickness of the product can be controlled and the product can be thinned according to users' needs, without surface treatment such as grinding, polishing, etc. Thereby production cost is reduced and yield rate of the products is improved.

Abstract: A double screw cutter for recycled carbon fiber material and a method of cutting recycled carbon fiber material by using the same are provided. The double screw cutter includes a housing and counter-rotating twin screws. A cut channel is formed in the housing while a long-fiber feed inlet, a mid-fiber feed inlet, and a short-fiber feed inlet are disposed on an outer surface of the housing and all communicated with the cut channel. A discharge outlet is arranged at a rear end of the housing and communicated with the cut channel. The counter-rotating twin screws are mounted in the cut channel of the housing and provided with two screw rods rotated in opposite directions simultaneously. Thereby recycled carbon fiber with different lengths is cut into a preset length and thus the following processes and applications of the recycled carbon fiber become more convenient.

Abstract: An electrostatic discharge (ESD) protection circuit including a detection circuit, a voltage-divider element, and a discharge element is provided. The detection circuit is coupled between a first power line and a second power line. In response to an ESD event, the detection circuit enables a turn-on signal. The voltage-divider element is coupled between the first power line and a third power line and receives the turn-on signal. The discharge element is coupled between the second and third power lines. In response to the turn-on signal being enabled, the first discharge element discharges an ESD current.

Abstract: An electrostatic discharge (ESD) protection circuit including a detection circuit, a voltage-divider element, and a discharge element is provided. The detection circuit is coupled between a first power line and a second power line. In response to an ESD event, the detection circuit enables a turn-on signal. The voltage-divider element is coupled between the first power line and a third power line and receives the turn-on signal. The discharge element is coupled between the second and third power lines. In response to the turn-on signal being enabled, the first discharge element discharges an ESD current.

Abstract: A graphene dispersion is provided. The graphene dispersion is formed by a graphene powder and a processing solvent, wherein the graphene in the graphene dispersion has an average diameter of 0.5 ?m to 1 ?m, 3 to 5 layers, a solid content of 5% to 50%, and a residue oxygen content less than 1 wt %, and after being left to stand for 12 hours, the graphene dispersion has a distribution concentration increasing from the top section to the bottom section of the storage container, a viscosity of 5000 cps to 8000 cps, and a graphene concentration of 20 wt %.

Abstract: A preparation method a graphene dispersion is provided, including the following steps. First, a homogenization process is performed on a graphene powder and a processing solvent to form a graphene paste. Next, a layer-thinning process is performed on the graphene paste to form a graphene dispersion.

Abstract: An air flow generating device, a graphene dispersion, and a preparation method thereof are provided. The graphene dispersion is formed by a graphene powder and a processing solvent, wherein the graphene in the graphene dispersion has an average diameter of 0.5 ?m to 1 ?m, 3 to 5 layers, a solid content of 5% to 50%, and a residue oxygen content less than 1 wt %, and after being left to stand for 12 hours, the graphene dispersion has a distribution concentration increasing from the top section to the bottom section of the storage container, a viscosity of 5000 cps to 8000 cps, and a graphene concentration of 20 wt %.

Abstract: Described herein are techniques and systems for controlling a broadcast mode and a timer mode to update data stored in respective caches of multiple cache servers. When a cache server is operating in the broadcast mode, the cache server receives a data update or a notification of a data update from a broadcast server. When a cache server is operating in the timer mode, the cache server updates its cache without the use of, or reliance upon, the broadcast server. A cache server is configured to operate in the broadcast mode based on a determination that the broadcast server is capable of broadcasting (e.g., sending) messages and/or data updates to the cache servers. In contrast, a cache server is configured to operate in the timer mode based on a determination that the broadcast server is incapable of broadcasting messages and/or data updates to the cache servers.

Abstract: An air flow generating device, a graphene dispersion, and a preparation method thereof are provided. The graphene dispersion is formed by a graphene powder and a processing solvent, wherein the graphene in the graphene dispersion has an average diameter of 0.5 ?m to 1 ?m, 3 to 5 layers, a solid content of 5% to 50%, and a residue oxygen content less than 1 wt %, and after being left to stand for 12 hours, the graphene dispersion has a distribution concentration increasing from the top section to the bottom section of the storage container, a viscosity of 5000 cps to 8000 cps, and a graphene concentration of 20 wt %.

Abstract: Described herein are techniques and systems for controlling a broadcast mode and a timer mode to update data stored in respective caches of multiple cache servers. When a cache server is operating in the broadcast mode, the cache server receives a data update or a notification of a data update from a broadcast server. When a cache server is operating in the timer mode, the cache server updates its cache without the use of, or reliance upon, the broadcast server. A cache server is configured to operate in the broadcast mode based on a determination that the broadcast server is capable of broadcasting (e.g., sending) messages and/or data updates to the cache servers. In contrast, a cache server is configured to operate in the timer mode based on a determination that the broadcast server is incapable of broadcasting messages and/or data updates to the cache servers.

Abstract: A wound care dressing is provided, including a hydrophobic base fabric, a plurality of electrode pairs, a plurality of hydrogel layers, and a waterproof thin film. The hydrophobic base fabric has a first surface and a second surface opposite to each other. The electrode pairs are arranged in an array and disposed on the first surface of the hydrophobic base fabric. The hydrogel layers are not in contact with one other, and each hydrogel layer covers a top surface and side walls of each electrode in the electrode pairs. After the hydrogel layers are in contact with a wound and absorb tissue fluid from the wound, the hydrogel layers form a restrictive electronic cycling channel with the electrode pairs to establish a plurality of bioelectric fields promoting wound healing on a surface of the wound. The waterproof thin film is disposed on the second surface of the hydrophobic base fabric.