Patents by Inventor Ting Gang Zhu

Ting Gang Zhu has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Second Schottky contact metal layer to improve GaN schottky diode performance
    Patent number: 8823013
    Abstract: A Schottky contact is disposed atop the surface of the semiconductor. A first Schottky contact metal layer is disposed atop a first portion of the semiconductor surface. A second Schottky contact metal is disposed atop a second portion of the surface layer and joins the first Schottky contact metal layer. A first. Schottky contact metal layer has a lower work function than the second Schottky contact metal layer.
    Type: Grant
    Filed: December 12, 2013
    Date of Patent: September 2, 2014
    Assignee: Power Integrations, Inc.
    Inventors: Ting Gang Zhu, Marek Pabisz
  • Second Schottky Contact Metal Layer to Improve GaN Schottky Diode Performance
    Publication number: 20140110721
    Abstract: A Schottky contact is disposed atop the surface of the semiconductor. A first Schottky contact metal layer is disposed atop a first portion of the semiconductor surface. A second Schottky contact metal is disposed atop a second portion of the surface layer and joins the first Schottky contact metal layer. A first. Schottky contact metal layer has a lower work function than the second Schottky contact metal layer.
    Type: Application
    Filed: December 12, 2013
    Publication date: April 24, 2014
    Applicant: Power Integrations, Inc.
    Inventors: Ting Gang Zhu, Marek Pabisz
  • Second contact schottky metal layer to improve GaN schottky diode performance
    Patent number: 8629525
    Abstract: A Schottky diode includes a first nitride-based semiconductor layer disposed atop a substrate. A second nitride-based semiconductor layer is disposed atop a portion of the first nitride-based semiconductor layer. The second layer has a doping concentration lower than that of the first layer. A first Schottky contact metal layer having a first metal work function is disposed on a top planar surface of the second layer, forming a first Schottky junction. A second Schottky contact metal layer having a second metal work function is disposed atop of and laterally surrounding the first Schottky contact metal layer, the metal work function of the second metal layer is higher than that of the first metal layer. A metal layer disposed on first and second planar surfaces forms an ohmic contact with the first nitride-based semiconductor layer.
    Type: Grant
    Filed: September 21, 2011
    Date of Patent: January 14, 2014
    Assignee: Power Integrations, Inc.
    Inventors: Ting Gang Zhu, Marek Pabisz
  • Second contact schottky metal layer to improve GaN schottky diode performance
    Publication number: 20120043551
    Abstract: A Schottky diode includes a first nitride-based semiconductor layer disposed atop a substrate. A second nitride-based semiconductor layer is disposed atop a portion of the first nitride-based semiconductor layer. The second layer has a doping concentration lower than that of the first layer. A first Schottky contact metal layer having a first metal work function is disposed on a top planar surface of the second layer, forming a first Schottky junction. A second Schottky contact metal layer having a second metal work function is disposed atop of and laterally surrounding the first Schottky contact metal layer, the metal work function of the second metal layer is higher than that of the first metal layer. A metal layer disposed on first and second planar surfaces forms an ohmic contact with the first nitride-based semiconductor layer.
    Type: Application
    Filed: September 21, 2011
    Publication date: February 23, 2012
    Applicant: Power Integrations, Inc.
    Inventors: Ting Gang Zhu, Marek Pabisz
  • Second Schottky contact metal layer to improve GaN Schottky diode performance
    Patent number: 8026568
    Abstract: A Schottky contact is disposed atop a surface of a semiconductor. A first Schottky contact metal layer is disposed atop a first portion of the semiconductor surface. A second Schottky contact metal is disposed atop a second portion of the surface layer and adjoins the first Schottky contact metal layer. The first Schottky contact metal layer has a lower work function than the second Schottky contact metal layer.
    Type: Grant
    Filed: October 27, 2006
    Date of Patent: September 27, 2011
    Assignee: Velox Semiconductor Corporation
    Inventors: Ting Gang Zhu, Marek Pabisz
  • Non-activated guard ring for semiconductor devices
    Patent number: 7229866
    Abstract: A guard ring is formed in a semiconductor region that is part of a Schottky junction or Schottky diode. The guard ring is formed by ion implantation into the semiconductor contact layer without completely annealing the semiconductor contact layer to form a high resistance region. The guard ring may be located at the edge of the layer or, alternatively, at a distance away from the edge of the layer. A Schottky metal contact is formed atop the layer, and the edges of the Schottky contact are disposed atop the guard ring.
    Type: Grant
    Filed: September 7, 2004
    Date of Patent: June 12, 2007
    Assignee: Velox Semiconductor Corporation
    Inventors: Ting Gang Zhu, Bryan S. Shelton, Alex D. Ceruzzi, Linlin Liu, Michael Murphy, Milan Pophristic