Abstract: Disclosed is a system that comprises a memory device and a processing device, operatively coupled with the memory device, to perform operations that include, determining that a value of a write counter associated with the memory device satisfies a first threshold criterion, wherein the write counter is a global counter indicating a number of write operations to the memory device. The operations performed by the processing device further include determining that a set of failed bit count statistics corresponding to a plurality of codewords of a memory unit satisfies a second threshold criterion. The operations performed by the processing device further include, responsive to determining that the set of failed bit count statistics corresponding to the plurality of codewords of the memory unit satisfies the second threshold criterion, performing a write scrub operation on the memory unit.

Abstract: An apparatus and an associated method relates to a directionally polarized deceleration module (PDM) include a shuttle (125) fixedly coupled to a spring-biased spool (120) rotatable coupled to a module housing (115), a dynamic braking member (DBM) (130) and the shuttle (125) configured to travel inside a channel anchored to the module housing (115). A tether may be anchored on a proximal end to the spool (120). As the tether is retracted, the DBM (130) may be pushed by an angled distal-end of the shuttle (125). The DBM (130) may be forced between the angled distal-end of the shuttle (125) and an inner channel wall, providing motional resistance to the tether. As the tether is extracted, the DBM (130) may be pushed substantially normal to a proximal-end of the shuttle (125), providing minimal motional resistance to the tether. Various PDMs may decelerate safety lanyards in one direction to substantially avoid tangling and/or damage.

Abstract: A difference between a recorded time stamp for a first set of memory cells comprised by an open translation unit (TU) of memory cells and a current time stamp for the open TU is determined, wherein the first set of memory cells comprises a most recently programmed set of memory cells. It is determined, based on a current temperature for the open TU and the difference between the recorded time stamp and the current time stamp, that a second set of memory cells comprised by the open TU is in a coarse programming state. A programming operation is performed on the second set of memory cells using a reduced programming state verify level and a reduced programming state gate step size associated with the second set of memory cells.

Abstract: Methods, apparatuses and systems related to managing deck-specific read levels are described. The apparatus may include a memory array having the memory cells organized into two or more decks. The apparatus can determine a delay between programming the decks. The apparatus can derive and implement the deck-specific read levels by selectively adjusting a base read level with an offset level according to the delay and/or the targeted read location.

Abstract: A programming operation is performed on a first set of memory cells addressable by a first wordline (WL), wherein the first set of memory cells are comprised by an open translation unit (TU) of memory cells. It is determined that a second set of memory cells comprised by the open TU are in a coarse programming state, wherein the second set of memory cells is addressable by a second WL. In response to determining that the second set of memory cells satisfies a threshold criterion, a programming state verify level associated with the second WL is reduced by a verify level offset. A programming state gate step size associated with each WL of the open TU is reduced by a predefined value. A programming operation is performed on the second set of memory cells using the reduced programming state verify level and the reduced programming state gate step size.

Abstract: A processing device of a memory sub-system is configured to perform a plurality of write operations on a memory device comprising a plurality of memory units, the processing device is configured to maintain state information of the memory device in response to performing each write operation of a plurality of write operations on the memory device; identify, in view of the state information, a candidate memory unit of the plurality of memory units that has been written to by at least a threshold fraction of the plurality of write operations performed on the memory device; and responsive to determining that a number of write operations performed on the memory device satisfies a threshold refresh criterion and that one or more of the plurality of memory units that are proximate to the candidate memory unit satisfy a failed bit threshold criterion, refresh data stored at the one or more of the plurality of memory units that are proximate to the candidate memory unit.

Abstract: A current cycle count associated with a memory sub-system is determined. The current cycle count is compared to a set of cycle count threshold levels to determine a current lifecycle stage of the memory sub-system. A temperature associated with the memory sub-system is measured. The temperature is compared to a set of temperature levels to determine a current temperature level of the memory sub-system. A write-to-read delay time corresponding to the current lifecycle stage and the current temperature level is determined.

Abstract: A low profile surface mount electromagnetic component for multi-phase electrical power circuitry implemented on a circuit board includes a magnetic core structure and at least one dual-winding arrangement including windings of different thickness but each including an elongated planar main winding section extending linearly across the magnetic core structure. One of the elongated planar main winding sections overlies the other, and a separator element separates the elongated planar main winding sections while the windings remain magnetically coupled to one another.

Abstract: An electromagnetic component includes a magnetic core and a dual-winding arrangement inside the magnetic core structure. The dual-winding arrangement includes a first winding fabricated from an elongated conductor having a first thickness and defining a first inverted U-shaped main winding portion including out of plane axial bends, and a second winding fabricated from a conductor having a second thickness and being formed into a second inverted U-shaped main winding portion with perpendicular sections extending co-planar to one another without any out of plane axial bends.

Abstract: An apparatus and an associated method relates to a directionally polarized deceleration module (PDM) include a shuttle (125) fixedly coupled to a spring-biased spool (120) rotatable coupled to a module housing (115), a dynamic braking member (DBM) (130) and the shuttle (125) configured to travel inside a channel anchored to the module housing (115). A tether may be anchored on a proximal end to the spool (120). As the tether is retracted, the DBM (130) may be pushed by an angled distal-end of the shuttle (125). The DBM (130) may be forced between the angled distal-end of the shuttle (125) and an inner channel wall, providing motional resistance to the tether. As the tether is extracted, the DBM (130) may be pushed substantially normal to a proximal-end of the shuttle (125), providing minimal motional resistance to the tether. Various PDMs may decelerate safety lanyards in one direction to substantially avoid tangling and/or damage.