Abstract: A semiconductor structure including: a substrate including a plurality of conductive layers and a plurality of insulating layers stacked alternately with each other along a vertical direction of the substrate; a first conductive via structure extending from a top conductive layer of the conductive layers to a bottom conductive layer of the conductive layers and including a first capacitive structure, the first capacitive structure extending in a first conductive layer of the conductive layers; a second conductive via structure extending from the top conductive layer to the bottom conductive layer and including a second capacitive structure extending in the first conductive layer; and a third capacitive structure extending in the first conductive layer or a second conductive layer of the conductive layers, wherein the third capacitive structure forms a first mutual capacitance with the first capacitive structure and a second mutual capacitance with the second capacitive structure.