Abstract: A compound is provided as having a structure of Formula I: where X1 and X2 are each independently a nitrogen atom or a C—R group, C is a carbon atom, R is a hydrogen atom, a deuterium atom, a halogen atom, or a cyano group, CR, and at least one of X1 and X2 is N; L1, L2, and L3 are each independently a single bond, a substituted or unsubstituted aryl group, or substituted or unsubstituted aryl heteroaryl group; and Ar1, Ar2 are each independently a substituted or unsubstituted aryl group or a substituted or unsubstituted heteroaryl group.

Abstract: In accordance with various embodiments of the disclosed subject matter, a shallow trench isolation structure and a fabricating method thereof are provided. The method for forming the shallow trench isolation structure may include: providing a semiconductor substrate; forming a shallow trench in the semiconductor substrate; forming a first insulating layer on a surface of the semiconductor substrate and in the shallow trench, a portion of the first insulating layer in the shallow trench includes an opening; etching the first insulating layer to increase a width of the opening; after etching the first insulating layer, performing a plasma treatment to an exposed surface of the first insulating layer; after the plasma treatment, cleaning the surface of the first insulating layer; and after cleaning the surface of the first insulating layer, filling a second insulating layer into the shallow trench.

Abstract: In accordance with various embodiments of the disclosed subject matter, a shallow trench isolation structure and a fabricating method thereof are provided. The method for forming the shallow trench isolation structure may include: providing a semiconductor substrate; forming a shallow trench in the semiconductor substrate; forming a first insulating layer on a surface of the semiconductor substrate and in the shallow trench, a portion of the first insulating layer in the shallow trench includes an opening; etching the first insulating layer to increase a width of the opening; after etching the first insulating layer, performing a plasma treatment to an exposed surface of the first insulating layer; after the plasma treatment, cleaning the surface of the first insulating layer; and after cleaning the surface of the first insulating layer, filling a second insulating layer into the shallow trench.