Abstract: A sensor for detecting at least one property of a fluid medium in at least one measuring chamber, for detecting an H2 fraction in a measuring gas. The sensor includes at least a first sensor element to detect a heat conductivity of the fluid medium and output a first measuring signal, a second sensor element including a semiconducting metal oxide and designed to output a second measuring signal, a third sensor element for detecting a physical property of the fluid medium, the third sensor element differing from the first sensor element and the second sensor element with regard to the detected physical property and being designed to output a third measuring signal, and an electronic evaluation unit for evaluating the first, second, and third measuring signal. The electronic evaluation unit is designed to change operating parameters of the first and/or second and/or third sensor element.

Abstract: A method for measuring a magnetic field includes radiating a microwave field having a first frequency into at least one measuring location in a crystal, which comprises optically excitable color center defects at the measuring location, radiating excitation light and detecting resulting fluorescence light, applying a deformation force which results in local mechanical strain, wherein an applied first deformation force is selected such that the first frequency corresponds to a resonance frequency of the color center defects under the action of the first deformation force without the magnetic field to be measured and the detected fluorescence light becomes minimal. The method further includes placing the sensor into the magnetic field to be measured to bring about a shift in the resonance frequency and varying the applied deformation force to compensate the shift in the resonance frequency until a minimum fluorescence signal is again acquired at a second deformation force.

Abstract: A method is for measuring phase currents of a device under test, in particular of an inverter, in which a sensor arrangement, which has a component including a crystal lattice with a defect, is arranged in a region of the device under test. The method includes using the sensor arrangement to detect a magnetic field formed by a vector of magnetic fields, the magnetic fields each in turn being brought about by one of the phase currents of the device under test, and calculating a vector of the phase currents from the vector of the magnetic fields based on a coefficient matrix.

Abstract: A method of sequencing a prepared DNA strand includes providing the prepared DNA strand with nucleotides of the types dATP, dCTP, dGTP and/or dTTP, wherein at least one of the types of the nucleotides comprises a predetermined magnetic label. The method further includes placing the prepared DNA strand within a measuring range of a sensor unit comprising an operatively connected magneto-optical transducer unit and an optical sensor and optically exciting the magneto-optical transducer unit. The method continues with acquiring at least one value indicative of a fluorescence signal of the magneto-optical transducer unit, and assigning the acquired value to the at least one type of the nucleotides comprising the predetermined magnetic label.

Abstract: A method for determining a rotational orientation change using an NMR gyroscope includes making use of a measure of determining, in a vapor cell, which is filled at least with a gaseous first element and a gaseous second element having non-vanishing nuclear spin, a nuclear spin component of the second element in the second direction and a nuclear spin component of the second element in a third direction. The second direction and the third direction are perpendicular to a first direction, which corresponds to the direction of the static magnetic field and to the polarization direction of the nuclear spin of the second element. Moreover, the second direction corresponds to the direction of an applied alternating magnetic field, the frequency of which corresponds to the Larmor frequency of the Larmor precession of the nuclear spin of the second element about the static magnetic field.

Abstract: A method for ascertaining a change in a spatial orientation of a nuclear magnetic resonance (NMR) gyroscope having a diamond doped with color centers includes applying a static external magnetic field in a first direction, polarizing a nuclear spin of the color centers of the diamond in a direction of the static magnetic field, and generating a cophasal Larmor precession of the nuclear spin of the color centers of the diamond through application of an alternating magnetic field in a second direction perpendicular to the first direction, whose frequency corresponds to the Larmor frequency of the nuclear spin of the color centers. The method further includes measuring a phase of the Larmor precession, and ascertaining a change in the spatial orientation in a plane perpendicular to the first direction based on a deviation of the precession frequency from an expected value.

Abstract: A transistor for detecting gases in the ambient air. The transistor includes a plurality of electrodes with one electrode being a gate electrode. At least one electrode is individually coated by a ceramic. An ionogel connects all electrodes with each other, the ionogel being an ionic liquid immobilized by a matrix. The use of such a transistor as an air-quality sensor is described. A process for making the transistor is also described. The process includes providing a plurality of electrodes, wherein one of the electrodes is a gate electrode; individually depositing a ceramic precursor on at least one of the plurality of electrodes; and connecting the plurality of electrodes with an ionogel, the ionogel being an ionic liquid immobilized by a matrix. A transistor produced by the process is also described.

Abstract: A method for ascertaining a change in a spatial orientation of a nuclear magnetic resonance (NMR) gyroscope having a diamond doped with color centers includes applying a static external magnetic field in a first direction, polarizing a nuclear spin of the color centers of the diamond in a direction of the static magnetic field, and generating a cophasal Larmor precession of the nuclear spin of the color centers of the diamond through application of an alternating magnetic field in a second direction perpendicular to the first direction, whose frequency corresponds to the Larmor frequency of the nuclear spin of the color centers. The method further includes measuring a phase of the Larmor precession, and ascertaining a change in the spatial orientation in a plane perpendicular to the first direction based on a deviation of the precession frequency from an expected value.

Abstract: A magnetometer is described, having a substrate and a magnetic core, the substrate having an excitation coil for generating a magnetic flux in the magnetic core; and the excitation coil having a coil cross section, which is aligned generally perpendicular to a main plane of extension of the substrate. The magnetic core is situated outside the coil cross section.

Abstract: A microelectromechanical sensor is configured to measure a force, a pressure, or the like. The sensor includes a substrate and a measuring element. The measuring element includes at least two electrically conductive regions, and at least one of the electrically conductive regions is at least partly connected to the substrate. The sensor also includes at least one changing region, and the changing region lies at least partly between the electrically conductive regions. The changing region is configured in a substantially electrically insulating manner in an unloaded state and in a substantially electrically conductive manner in a loaded state.

Abstract: A method for selective etching of an SiGe mixed semiconductor layer on a silicon semiconductor substrate by dry chemical etching of the SiGe mixed semiconductor layer with the aid of an etching gas selected from the group including ClF3 and/or ClF5, a gas selected from the group including Cl2 and/or HCl being added to the etching gas.

Abstract: A particle sensor including a diaphragm, a diaphragm heater, and at least two measuring electrodes situated on the diaphragm, for electrical conductivity measurement, the diaphragm having a thickness of less than or equal to 50 ?m, in order to allow a calorimetric particle quantity determination.

Abstract: A microelectromechanical sensor is configured to measure a force, a pressure, or the like. The sensor includes a substrate and a measuring element. The measuring element includes at least two electrically conductive regions, and at least one of the electrically conductive regions is at least partly connected to the substrate. The sensor also includes at least one changing region, and the changing region lies at least partly between the electrically conductive regions. The changing region is configured in a substantially electrically insulating manner in an unloaded state and in a substantially electrically conductive manner in a loaded state.

Abstract: A method for producing a component, and a component, in particular a micromechanical and/or microfluidic and/or microelectronic component, is provided, the component including at least one patterned material region, and in a first step the patterned material region is produced in that microparticles of a first material are embedded in a matrix of a second material, and in a second step the patterned material region is rendered porous by etching using a dry etching method or a gas-phase etching method.

Abstract: A method for producing micromechanical patterns having a relief-like sidewall outline shape or an angle of inclination that is able to be set, the micromechanical patterns being etched out of a SiGe mixed semiconductor layer that is present on or deposited on a silicon semiconductor substrate, by dry chemical etching of the SiGe mixed semiconductor layer; the sidewall outline shape of the micromechanical pattern being developed by varying the germanium proportion in the SiGe mixed semiconductor layer that is to be etched; a greater germanium proportion being present in regions that are to be etched more strongly; the variation in the germanium proportion in the SiGe mixed semiconductor layer being set by a method selected from the group including depositing a SiGe mixed semiconductor layer having varying germanium content, introducing germanium into a silicon semiconductor layer or a SiGe mixed semiconductor layer, introducing silicon into a germanium layer or an SiGe mixed semiconductor layer and/or by therm

Abstract: A magnetometer is described, having a substrate and a magnetic core, the substrate having an excitation coil for generating a magnetic flux in the magnetic core; and the excitation coil having a coil cross section, which is aligned generally perpendicular to a main plane of extension of the substrate. The magnetic core is situated outside the coil cross section.

Abstract: A method for etching a layer that is to be removed on a substrate, in which a Si1-xGex layer is the layer to be removed, this layer being removed, at least in areas, in gas phase etching with the aid of an etching gas, in particular ClF3. The etching behavior of the Si1-xGex layer can be controlled via the Ge portion in the Si1-xGex layer. The etching method is particularly well-suited for manufacturing self-supporting structures in a micromechanical sensor and for manufacturing such self-supporting structures in a closed hollow space, because the Si1-xGex layer, as a sacrificial layer or filling layer, is etched highly selectively relative to silicon.

Abstract: A method for producing micromechanical patterns having a relief-like sidewall outline shape or an angle of inclination that is able to be set, the micromechanical patterns being etched out of a SiGe mixed semiconductor layer that is present on or deposited on a silicon semiconductor substrate, by dry chemical etching of the SiGe mixed semiconductor layer; the sidewall outline shape of the micromechanical pattern being developed by varying the germanium proportion in the SiGe mixed semiconductor layer that is to be etched; a greater germanium proportion being present in regions that are to be etched more strongly; the variation in the germanium proportion in the SiGe mixed semiconductor layer being set by a method selected from the group including depositing a SiGe mixed semiconductor layer having varying germanium content, introducing germanium into a silicon semiconductor layer or a SiGe mixed semiconductor layer, introducing silicon into a germanium layer or an SiGe mixed semiconductor layer and/or by therm

Abstract: A particle sensor including a diaphragm, a diaphragm heater, and at least two measuring electrodes situated on the diaphragm, for electrical conductivity measurement, the diaphragm having a thickness of less than or equal to 50 ?m, in order to allow a calorimetric particle quantity determination.

Abstract: An encapsulated MEMS process including a high-temperature anti-stiction coating that is stable under processing steps at temperatures over 450 C is described. The coating is applied after device release but before sealing vents in the encapsulation layer. Alternatively, an anti-stiction coating may be applied to released devices directly before encapsulation.