Patents by Inventor Tiqiang PANG

Tiqiang PANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10332691
    Abstract: A method for manufacturing a HEMT/HHMT device based on CH3NH3PbI3 material are provided. The method includes: selecting an Al2O3 substrate; manufacturing a source electrode and a drain electrode; forming a first electron transport layer on a surface of the source electrode, a surface of the drain electrode, and a surface of the Al2O3 substrate not covered by the source electrode and the drain electrode; manufacturing CH3NH3PbI3 material on a surface of the first electron transport layer to form a first light absorbing layer; and forming a gate electrode on a surface of the first light absorbing layer to complete the manufacture of the HEMT device.
    Type: Grant
    Filed: September 1, 2018
    Date of Patent: June 25, 2019
    Assignee: XIDIAN UNIVERSITY
    Inventors: Renxu Jia, Lei Yuan, Yucheng Wang, Tiqiang Pang, Yuming Zhang
  • Publication number: 20180374654
    Abstract: A method for manufacturing a HEMT/HHMT device based on CH3NH3PbI3 material are provided. The method includes: selecting an Al2O3 substrate; manufacturing a source electrode and a drain electrode; forming a first electron transport layer on a surface of the source electrode, a surface of the drain electrode, and a surface of the Al2O3 substrate not covered by the source electrode and the drain electrode; manufacturing CH3NH3PbI3 material on a surface of the first electron transport layer to form a first light absorbing layer; and forming a gate electrode on a surface of the first light absorbing layer to complete the manufacture of the HEMT device.
    Type: Application
    Filed: September 1, 2018
    Publication date: December 27, 2018
    Inventors: Renxu JIA, Lei YUAN, Yucheng WANG, Tiqiang PANG, Yuming ZHANG