Abstract: A semiconductor substrate is configured for dicing into separate die or individual semiconductor devices. The semiconductor substrate can comprise silicon, silicon carbide, or gallium nitride. A dicing grid bounds each semiconductor device on the semiconductor substrate. A die singulation process is configured to occur in the dicing grid. Material is coupled to the dicing grid. In one embodiment, the material can comprise carbon. A laser is configured to couple energy to the material coupled to the dicing grid. The energy from the laser heats the material. The heat from the material or the temperature differential between the material and the dicing creates a thermal shock that generates a vertical fracture in the semiconductor substrate that separates the semiconductor device from the remaining semiconductor substrate.

Abstract: A method for manufacturing a wide band gap semiconductor device using a substrate of SiC wafer is disclosed. The method includes coating the substrate with a hard mask material, performing lithography to define patterned openings in the hard mask material of the substrate, etching the substrate to form patterned trenches from the defined patterned openings, removing the hard mask using a chemical process from the substrate, cleaning the substrate with the patterned trenches, performing epitaxy on the substrate to form a uniform single crystal layer over the patterned trenches to create a plurality of micro voids, kiss polishing the substrate, performing another epitaxy on the substrate using a fast epitaxial growth process to provide an active device epitaxial layer suitable to fabricate SiC devices, and after fabrication of the SiC devices, severing the plurality of micro voids to extract the SiC devices from the substrate of the SiC wafer.

Abstract: A semiconductor substrate comprising a first epitaxial silicon carbide layer and a second silicon carbide epitaxial layer. At least one semiconductor device is formed in or on the second silicon carbide epitaxial layer. The semiconductor substrate is formed overlying a silicon carbide substrate having a surface comprising silicon carbide and carbon. An exfoliation process is used to remove the semiconductor substrate from the silicon carbide substrate. The carbon on the surface of the silicon carbide substrate supports separation. A portion of the silicon carbide substrate on the semiconductor substrate is removed after the exfoliation process. The surface of the silicon carbide substrate is prepared for reuse in subsequent formation of semiconductor substrates.

Abstract: A semiconductor substrate comprising a first epitaxial silicon carbide layer and a second silicon carbide epitaxial layer. At least one semiconductor device is formed in or on the second silicon carbide epitaxial layer. The semiconductor substrate is formed overlying a silicon carbide substrate having a surface comprising silicon carbide and carbon. An exfoliation process is used to remove the semiconductor substrate from the silicon carbide substrate. The carbon on the surface of the silicon carbide substrate supports separation. A portion of the silicon carbide substrate on the semiconductor substrate is removed after the exfoliation process. The surface of the silicon carbide substrate is prepared for reuse in subsequent formation of semiconductor substrates.

Abstract: A method for manufacturing a wide band gap semiconductor device using a substrate of SiC wafer is disclosed. The method includes coating the substrate with a hard mask material, performing lithography to define patterned openings in the hard mask material of the substrate, etching the substrate to form patterned trenches from the defined patterned openings, removing the hard mask using a chemical process from the substrate, cleaning the substrate with the patterned trenches, performing epitaxy on the substrate to form a uniform single crystal layer over the patterned trenches to create a plurality of micro voids, kiss polishing the substrate, performing another epitaxy on the substrate using a fast epitaxial growth process to provide an active device epitaxial layer suitable to fabricate SiC devices, and after fabrication of the SiC devices, severing the plurality of micro voids to extract the SiC devices from the substrate of the SiC wafer.

Abstract: This disclosure pertains to a system, methods, and apparatus configured for generating singulated metal droplets and collecting powder metal. The system comprises crucible apparatus each including a crucible housing, a gas inlet, and an alloy nozzle. The crucible housing is operatively coupled to an induction heating element and power supply to provide induction heating of the crucible housing and electromagnetically levitate a mass of molten metal. The gas inlet is operatively coupled to a gas supply and configured to receive a pressurized gas pulse via the gas supply, the pressurized gas pulse being directed at the mass of molten metal. The alloy nozzle is configured to release a metal droplet singulated from the mass of molten level due to the pressurized gas pulse. The system includes a powder collection unit configured to collect powder from one or more dispensing channel configured to catch the falling singulated liquid metal droplet.

Abstract: A method for manufacturing a wide band gap semiconductor device using a substrate of SiC wafer is disclosed. The method includes coating the substrate with a hard mask material, performing lithography to define patterned openings in the hard mask material of the substrate, etching the substrate to form patterned trenches from the defined patterned openings, removing the hard mask using a chemical process from the substrate, cleaning the substrate with the patterned trenches, performing epitaxy on the substrate to form a uniform single crystal layer over the patterned trenches to create a plurality of micro voids, kiss polishing the substrate, performing another epitaxy on the substrate using a fast epitaxial growth process to provide an active device epitaxial layer suitable to fabricate SiC devices, and after fabrication of the SiC devices, severing the plurality of micro voids to extract the SiC devices from the substrate of the SiC wafer.

Abstract: This disclosure pertains to a system, methods, and apparatus configured for generating singulated metal droplets and collecting powder metal. The system comprises crucible apparatus each including a crucible housing, a gas inlet, and an alloy nozzle. The crucible housing is operatively coupled to an induction heating element and power supply to provide induction heating of the crucible housing and electromagnetically levitate a mass of molten metal. The gas inlet is operatively coupled to a gas supply and configured to receive a pressurized gas pulse via the gas supply, the pressurized gas pulse being directed at the mass of molten metal. The alloy nozzle is configured to release a metal droplet singulated from the mass of molten level due to the pressurized gas pulse. The system includes a powder collection unit configured to collect powder from one or more dispensing channel configured to catch the falling singulated liquid metal droplet.

Abstract: A method of making a capacitor on a conductive surface, preferably on a polysilicon surface includes contamination cleaning the surface with a high density plasma (HDP) of a first gaseous agent, such as hydrogen, then growing a silicon nitride barrier layer on the surface using a high density plasma (HDP) of nitrogen. A layer of tantalum oxide is then deposited on the silicon nitride layer to form a capacitor dielectric layer. A second silicon nitride layer is then grown on the capacitor dielectric layer, also using an HDP nitrogen plasma with the addition of a silicon containing gas, such as silane. Finally, a conductive layer is deposited on the second silicon nitride layer to form the capacitor. The HDP plasma is heated using an inductively coupled radio frequency generator. The invention also includes a capacitor constructed on a conductive surface by the method of the invention.