Abstract: This disclosure concerns the production of ZnO (zinc oxide) coated particles for use in rubber as a substitute for bulk ZnO particles. Compared to bulk oxide, oxide coated particles offer the advantage of a higher specific surface per mass unit of ZnO. This implies both ecological and economical benefits. An enhanced process is presented for the synthesis of aggregate particles, comprising a core of CaCO3, which is at least partially coated with ZnO, comprising the steps of: heating a metallic Zn bath, thereby evaporating Zn and forming a Zn-vapor atmosphere; injecting CaCO3 particles as core compound in the Zn-vapor atmosphere; injecting air in the Zn-vapor atmosphere in an amount in excess of the stoechiometric need for the oxidation of the Zn vapor to ZnO. This process is clean and sustainable, producing no unnecessary phases.

Abstract: This disclosure concerns the production of ZnO (zinc oxide) coated particles for use in rubber as a substitute for bulk ZnO particles. Compared to bulk oxide, oxide coated particles offer the advantage of a higher specific surface per mass unit of ZnO. This implies both ecological and economical benefits. An enhanced process is presented for the synthesis of aggregate particles, comprising a core of CaCO3, which is at least partially coated with ZnO, comprising the steps of: heating a metallic Zn bath, thereby evaporating Zn and forming a Zn-vapor atmosphere; injecting CaCO3 particles as core compound in the Zn-vapor atmosphere; injecting air in the Zn-vapor atmosphere in an amount in excess of the stoechiometric need for the oxidation of the Zn vapor to ZnO. This process is clean and sustainable, producing no unnecessary phases.

Abstract: The invention relates to the manufacture of high purity silicon as a base material for the production of e.g. crystalline silicon solar cells. SiCU is converted to Si metal by contacting gaseous SiCU with liquid Zn, thereby obtaining a Si-bearing alloy and Zn-chloride, which is separated. The Si-bearing alloy is then purified at a temperature above the boiling point of Zn. This process does not require complicated technologies and preserves the high purity of the SiCU towards the end product, as the only reactant is Zn, which can be obtained in very high purity grades and continuously recycled.

Abstract: The invention relates to the manufacture of high purity germanium for the manufacture of e.g. infra red optics, radiation detectors and electronic devices. GeCl4 is converted to Ge metal by contacting gaseous GeCl4 with a liquid metal M containing one of Zn, Na and Mg, thereby obtaining a Ge-bearing alloy and a metal M chloride, which is removed by evaporation or skimming. The Ge-bearing alloy is then purified at a temperature above the boiling point of metal M. This process does not require complicated technologies and preserves the high purity of the GeCl4 in the final Ge metal, as the only reactant is metal M, which can be obtained in very high purity grades and continuously recycled.

Abstract: The invention relates to the manufacture of high purity silicon as a base material for the production of e.g. crystalline silicon solar cells. SiHCl3 is converted to Si metal by contacting gaseous SiHCl3 with liquid Zn, thereby obtaining a Si-bearing alloy, H2 and ZnCl2, which are separated. The Si-bearing alloy is then purified at a temperature above the boiling point of Zn. This process does not require complicated technologies and preserves the high purity of the SiHCl3 towards the end product. The only other reactant is Zn, which can be obtained in very high purity grades, and which can be recycled after electrolysis of the Zn-chloride.

Abstract: The invention relates to the manufacture of high purity germanium for the manufacture of e.g. infra red optics, radiation detectors and electronic devices. GeCl4 is converted to Ge metal by contacting gaseous GeCl4 with a liquid metal M containing one of Zn, Na and Mg, thereby obtaining a Ge-bearing alloy and a metal M chloride, which is removed by evaporation or skimming. The Ge-bearing alloy is then purified at a temperature above the boiling point of metal M. This process does not require complicated technologies and preserves the high purity of the GeCl4 in the final Ge metal, as the only reactant is metal M, which can be obtained in very high purity grades and continuously recycled.

Abstract: The invention relates to the manufacture of high purity silicon as a base material for the production of e.g. crystalline silicon solar cells. SiCU is converted to Si metal by contacting gaseous SiCU with liquid Zn, thereby obtaining a Si-bearing alloy and Zn-chloride, which is separated. The Si-bearing alloy is then purified at a temperature above the boiling point of Zn. This process does not require complicated technologies and preserves the high purity of the SiCU towards the end product, as the only reactant is Zn, which can be obtained in very high purity grades and continuously recycled.