Abstract: A semiconductor package assembly having reduced stresses and a method for forming the same are provided. The method includes providing a package substrate comprising a base material, forming an interconnect structure overlying the package substrate, attaching at least one chip to a first surface of the package substrate, thinning the package substrate from a second surface opposite the first surface wherein the semiconductor material is substantially removed, and attaching ball grid array (BGA) balls to deep vias exposed on the second surface of the package substrate after thinning the package substrate.

Abstract: A method includes joining an integrated circuit die having at least one low-k dielectric layer to a package substrate or printed circuit board using a plurality of solder bumps located between the die and the package substrate or printed circuit board. The low-k dielectric layer has a dielectric constant of about 3.0 or less. The solder bumps have a lead concentration of about 5% or less. A stratified underfill is formed between the die and the package substrate or printed circuit board.

Abstract: A multi-level lead frame configuration (114) for an integrated circuit chip (116) comprises a main lead frame (115) having a plurality of lead frame bond fingers (122 and 124) that directly connect to a plurality of bond pads (126) on the integrated circuit chip (116). Associated with the main lead frame (115) is a bus bar lead frame (128 and 130) having a plurality of bus bar lead fingers (118 and 120) that directly connect to a second plurality of inner bond pads (126) on the integrated circuit chip (116). The bus bar bond fingers (118 and 120) associate with the main lead frame (115) and main lead frame bond fingers (122 and 124) to permit a lead-on-chip configuration of the main lead frame and the bus bar lead frame.