Patents by Inventor Toa Hayasaka

Toa Hayasaka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 5036290
    Abstract: Synchrotron radiation is generated when a base of charged particles is bent by a bending magnet. The synchrotron radiation passes down a lead-out duct as the total number of pumps is limited by the size of the apparatus and many pumps are needed in order to achieve a good vacuum. An ion pump has a main magnetic field, normally generated by a magnet of the ion pump which controls the behavior of the electrons in the ion pump. However, the leakage magnetic field of the bending magnet affects the ion pump, and therefore the ion pump is arranged so that its main magnetic field is aligned with the leakage magnetic field at the ion pump, or at least with a main component thereof. In this way, the effect of the leakage magnetic field on the ion pump is reduced. Indeed, it is possible to use the leakage magnetic field as the main magnetic field of the ion pump.
    Type: Grant
    Filed: March 8, 1990
    Date of Patent: July 30, 1991
    Assignees: Hitachi, Ltd., Nippon Telegraph and Telephone Corp.
    Inventors: Tadasi Sonobe, Mamoru Katane, Takashi Ikeguchi, Manabu Matsumoto, Shinjiro Ueda, Toshiaki Kobari, Takao Takahashi, Toa Hayasaka, Toyoki Kitayama
  • Patent number: 4238706
    Abstract: There is disclosed a soft x-ray source comprising (a) a substrate formed of a thermally conductive material, such as copper or a copper alloy, which tends to generate predominantly hard x-rays upon the collision of an electron beam, (b) an intermediate layer formed on the substrate, the intermediate layer being at least one of rhodium, silver, palladium, and molybdenum, and (c) a silicon film formed on the intermediate layer. There is also disclosed an x-ray lithographic apparatus comprising (a) an electron beam source, (b) the soft x-ray source described above, and (c) means for irradiating an object with the emitted soft x-rays. The method for manufacturing the soft x-ray source comprises (a) preparing a substrate, (b) setting the substrate in a vacuum chamber, (c) introducing a gas or vapor-containing silicon in a vacuum chamber, and (d) forming a silicon film on the intermediate layer by generating a plasma within the vacuum chamber.
    Type: Grant
    Filed: December 5, 1978
    Date of Patent: December 9, 1980
    Assignee: Nippon Electric Co., Ltd.
    Inventors: Hideo Yoshihara, Mikiho Kiuchi, Satoshi Nakayama, Toa Hayasaka, Junji Matsui