Patents by Inventor Toai LE QUANG

Toai LE QUANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for making an electrical contact on a graphite layer, contact obtained by using such a method and electronic device using such a contact
    Patent number: 10263081
    Abstract: A method for manufacturing a graphite layer on an interstitial carbide layer, includes depositing a metal layer formed by one or more metals on a carbide substrate, the metal layer being able to form an interstitial carbide, the metal layer at least partially covering the carbide substrate; performing a heat treatment during which a temperature higher than the dissociation temperature of the carbide of the carbide substrate is applied; wherein the heat allows a reaction between the metal layer and the carbide substrate to form the interstitial carbide layer as well as a first part of the graphite layer at the surface of the interstitial carbide layer, and, when the metal layer only partially covers the carbide substrate, a formation of a second part of the graphite layer at the surface of the carbide substrate which is not covered with the metal layer.
    Type: Grant
    Filed: October 11, 2017
    Date of Patent: April 16, 2019
    Assignee: COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
    Inventors: Vincent Renard, Toai Le Quang, Claude Chapelier
  • METHOD FOR MAKING AN ELECTRICAL CONTACT ON A GRAPHITE LAYER, CONTACT OBTAINED BY USING SUCH A METHOD AND ELECTRONIC DEVICE USING SUCH A CONTACT
    Publication number: 20180108740
    Abstract: A method for manufacturing a graphite layer on an interstitial carbide layer, includes depositing a metal layer formed by one or more metals on a carbide substrate, the metal layer being able to form an interstitial carbide, the metal layer at least partially covering the carbide substrate; performing a heat treatment during which a temperature higher than the dissociation temperature of the carbide of the carbide substrate is applied; wherein the heat allows a reaction between the metal layer and the carbide substrate to form the interstitial carbide layer as well as a first part of the graphite layer at the surface of the interstitial carbide layer, and, when the metal layer only partially covers the carbide substrate, a formation of a second part of the graphite layer at the surface of the carbide substrate which is not covered with the metal layer.
    Type: Application
    Filed: October 11, 2017
    Publication date: April 19, 2018
    Inventors: Vincent RENARD, Toai LE QUANG, Claude CHAPELIER