Abstract: Integrated circuitry comprising a ribbon or wire (RoW) transistor stack within which the transistors have different threshold voltages (Vt). In some examples, a gate electrode of the transistor stack may include only one workfunction metal. A metal oxide may be deposited around one or more channels of the transistor stack as a solid-state source of a metal oxide species that will diffuse toward the channel region(s). As diffused, the metal oxide may remain (e.g., as a silicate, or hafnate) in close proximity to the channel region, thereby altering the dipole properties of the gate insulator material. Different channels of a transistor stack may be exposed to differing amounts or types of the metal oxide species to provide a range of Vt within the stack. After diffusion, the metal oxide may be stripped as sacrificial, or retained.

Abstract: Integrated circuitry comprising a ribbon or wire (RoW) transistor stack within which the transistors have different threshold voltages (Vt). In some examples, a gate electrode of the transistor stack may include only one workfunction metal. A metal oxide may be deposited around one or more channels of the transistor stack as a solid-state source of a metal oxide species that will diffuse toward the channel region(s). As diffused, the metal oxide may remain (e.g., as a silicate, or hafnate) in close proximity to the channel region, thereby altering the dipole properties of the gate insulator material. Different channels of a transistor stack may be exposed to differing amounts or types of the metal oxide species to provide a range of Vt within the stack. After diffusion, the metal oxide may be stripped as sacrificial, or retained.

Abstract: An integrated circuit capacitor structure, includes a first electrode includes a cylindrical column, a ferroelectric layer around an exterior sidewall of the cylindrical column and a plurality of outer electrodes. The plurality of outer electrodes include a first outer electrode laterally adjacent to a first portion of an exterior of the ferroelectric layer and a second outer electrode laterally adjacent to a second portion of the exterior of the ferroelectric layer, wherein the second outer electrode is above the first outer electrode.

Abstract: Thin film transistors fabricated using a spacer as a fin are described. In an example, a method of forming a fin transistor structure includes patterning a plurality of backbone pillars on a semiconductor substrate. The method may then include conformally depositing a spacer layer over the plurality of backbone pillars and the semiconductor substrate. A spacer etch of the spacer layer is then performed to leave a sidewall of the spacer layer on a backbone pillar to form a fin of the fin transistor structure. Other embodiments may be described and claimed.

Abstract: An integrated circuit capacitor structure, includes a first electrode includes a cylindrical column, a ferroelectric layer around an exterior sidewall of the cylindrical column and a plurality of outer electrodes. The plurality of outer electrodes include a first outer electrode laterally adjacent to a first portion of an exterior of the ferroelectric layer and a second outer electrode laterally adjacent to a second portion of the exterior of the ferroelectric layer, wherein the second outer electrode is above the first outer electrode.

Abstract: Integrated circuitry comprising a ribbon or wire (RoW) transistor stack within which the transistors have different threshold voltages (Vt). In some examples, a gate electrode of the transistor stack may include only one workfunction metal. A metal oxide may be deposited around one or more channels of the transistor stack as a solid-state source of a metal oxide species that will diffuse toward the channel region(s). As diffused, the metal oxide may remain (e.g., as a silicate, or hafnate) in close proximity to the channel region, thereby altering the dipole properties of the gate insulator material. Different channels of a transistor stack may be exposed to differing amounts or types of the metal oxide species to provide a range of Vt within the stack. After diffusion, the metal oxide may be stripped as sacrificial, or retained.

Abstract: Thin film transistors fabricated using a spacer as a fin are described. In an example, a method of forming a fin transistor structure includes patterning a plurality of backbone pillars on a semiconductor substrate. The method may then include conformally depositing a spacer layer over the plurality of backbone pillars and the semiconductor substrate. A spacer etch of the spacer layer is then performed to leave a sidewall of the spacer layer on a backbone pillar to form a fin of the fin transistor structure.

Abstract: A complementary metal oxide semiconductor (CMOS) transistor includes a first transistor with a first gate dielectric layer above a first channel, where the first gate dielectric layer includes Hf1-xZxO2, where 0.33<x<0.5. The first transistor further includes a first gate electrode on the first gate dielectric layer and a first source region and a first drain region on opposite sides of the first gate electrode. The CMOS transistor further includes a second transistor adjacent to the first transistor. The second transistor includes a second gate dielectric layer above a second channel, where the second gate dielectric layer includes Hf1-xZxO2, where 0.5<x<0.99, a second gate electrode on the second gate dielectric layer and a second source region and a second drain region on opposite sides of the second gate electrode.

Abstract: An integrated circuit capacitor structure, includes a first electrode includes a cylindrical column, a ferroelectric layer around an exterior sidewall of the cylindrical column and a plurality of outer electrodes. The plurality of outer electrodes include a first outer electrode laterally adjacent to a first portion of an exterior of the ferroelectric layer and a second outer electrode laterally adjacent to a second portion of the exterior of the ferroelectric layer, wherein the second outer electrode is above the first outer electrode.

Abstract: An apparatus for counting attempts in a sporting game includes a housing with a display for displaying at least a running count of attempts; wrist band means having opposing first and second sides, being connected at the first side with the housing, and being sized and configured to encircle a person's wrist proximal the person's palm; an input contact member mounted at the second side of the wristband means for movement upon contact with the person's palm; an attempt input assembly operably connected with the input contact member to transmit an electrical signal upon detecting movement of the input contact member by the palm; and electronic processing and power elements for receiving input from the attempt input assembly and causing the display to display information related to the movement registered by the input contact member.

Abstract: A lamp base has a projection that carries lamp contacts and has an outer surface formed with retaining formations arrayed with irregular spacing. A socket forms a recess into which the projection can be inserted with play and apertures provided with contacts engageable with the lamp contacts. Retaining formations in the socket fit with the lamp-base retaining formations in only one defined angular alignment of the lamp base and the socket. The projection has a central plug projecting toward the socket and forming a lamp key coded for a predetermined lamp wattage. The socket has a hole corresponding to the plug and itself forming a socket key coded for the maximally admissible lamp wattage for the socket. The lamp base only fits into the socket when the lamp wattage indicated by the lamp key does not exceed the maximally admissible lamp wattage defined by the socket key.

Abstract: A device for holding a compact fluorescent lamp in a light fixture with a socket 10 and a lamp base is shown and described. The bayonet-type fixing of the lamp base in a socket 10 is effected by means of a plug-and-rotate motion. In order to give manufacturers of light fixtures the possibility of manufacturing light fixtures for lamps with a predetermined or maximally admissible lamp wattage, the invention proposes a key system with seven key pairs. Each key pair comprises a lamp key and a socket key and characterizes a predetermined lamp wattage. Concretely speaking, the socket key is a lug arranged in a hole and the lamp key is a plug corresponding to the socket hole with a outwardly open cutout. In addition, a key system for making predetermined lamp types recognizable is described.

Abstract: A face protecting device comprising a generally concave shield having an inwardly projecting peripheral border portion and provided with an observation opening therein, said shield being further provided with two spaced angularly disposed hand grips in the lower portion thereof.