Abstract: An organic electroluminescence device may include a cathode, an anode, and an emitting layer disposed between the cathode and the anode, the emitting layer including: (i) at least one anthracene compound with a dipole moment of >1.0×10?30 Cm (0.3 debye); (ii) at least one organic fluorescent compound with (ii-a) an onset of fluorescence at lower energies than that of (i) and at an energy >2.6 eV, (ii-b) photoluminescence quantum yield >70%, and (ii-c) ionization potential >5.3 eV, as component (2); (iii) at least one organic compound with (iii-a) ionization potential <5.3 eV and (iii-b) onset of fluorescence at higher energies than that of (ii). A material may include (ii) and (iii) and electronic equipment may include such organic electroluminescence device(s) or material(s), which may be used in a light emitting layer of an organic electroluminescence device.

Abstract: The present invention relates to an electrically doped semiconducting material comprising at least one metallic element as n-dopant and at least one electron transport matrix compound comprising at least one phosphine oxide group, a process for its preparation, and an electronic device comprising the electrically doped semiconducting material.

Abstract: The present invention relates to an organic light-emitting diode (100) comprising an emission layer (150) and at least one electron transport layer (161), wherein the at least one electron transport layer (161) comprises at least one matrix compound and at least two lithium compounds.

Abstract: The present invention relates to a method comprising the steps: a) providing a layered structure applicable for preparing an organic electronic device, comprising: aa) a substrate comprising a first electrode structure and a non-electrode part; bb) a grid formed by a grid material, wherein open areas of the grid are arranged above at least a part of the first electrode structure and the grid material is arranged above at least a part of the non-electrode part; and cc) a layer stack comprising at least one redox-doped layer having a conductivity of at least 1E?7 S/cm, the layer stack being deposited on the grid; wherein the optical density measured by absorption spectroscopy of the grid material is higher than the optical density of the open areas; and b) irradiating light pulses having a duration of <10 ms and an energy of 0.

Abstract: An active OLED display, comprising a plurality of OLED pixels, each of the OLED pixels comprising an anode, a cathode, and a stack of organic layers, wherein the stack of organic layers is provided between and in contact with the cathode and the anode and comprises an electron transport layer, a hole transport layer, and a light emitting layer provided between the hole transport layer and the electron transport layer, and a driving circuit configured to separately driving the pixels of the plurality of OLED pixels, wherein, for the plurality of OLED pixels, a common hole transport layer is formed by the hole transport layers provided in the stack of organic layers of the plurality of OLED pixels, the common hole transport layer comprising a hole transport matrix material and at least one electrical p-dopant, and the electrical conductivity of the hole transport material being lower than 1×10?3 S·m?1 and higher than 1×10?8 S·m?1.

Abstract: The present invention relates to a method comprising the steps: a) providing a layered structure applicable for preparing an organic electronic device, comprising: aa) a substrate comprising a first electrode structure and a non-electrode part; bb) a grid formed by a grid material, wherein open areas of the grid are arranged above at least a part of the first electrode structure and the grid material is arranged above at least a part of the non-electrode part; and cc) a layer stack comprising at least one redox-doped layer having a conductivity of at least 1E?7 S/cm, the layer stack being deposited on the grid; wherein the optical density measured by absorption spectroscopy of the grid material is higher than the optical density of the open areas; and b) irradiating light pulses having a duration of <10 ms and an energy of 0.

Abstract: The present invention relates to an organic light-emitting diode (100) comprising an emission layer (150) and at least one electron transport layer (161), wherein the at least one electron transport layer (161) comprises at least one matrix compound and at least two lithium compounds.

Abstract: An active OLED display, comprising a plurality of OLED pixels, each of the OLED pixels comprising an anode, a cathode, and a stack of organic layers, wherein the stack of organic layers is provided between and in contact with the cathode and the anode and comprises an electron transport layer, a hole transport layer, and a light emitting layer provided between the hole transport layer and the electron transport layer, and a driving circuit configured to separately driving the pixels of the plurality of OLED pixels, wherein, for the plurality of OLED pixels, a common hole transport layer is formed by the hole transport layers provided in the stack of organic layers of the plurality of OLED pixels, the common hole transport layer comprising a hole transport matrix material and at least one electrical p-dopant, and the electrical conductivity of the hole transport material being lower than 1×10?3 S·m?1 and higher than 1×10?8 S·m?1.

Abstract: The present invention relates to an electrically doped semiconducting material comprising at least one metallic element as n-dopant and at least one electron transport matrix compound comprising at least one phosphine oxide group, a process for its preparation, and an electronic device comprising the electrically doped semiconducting material.

Abstract: The present invention relates to an organic light emitting device that includes a layered structure including a substrate, a bottom electrode and a top electrode, wherein the bottom electrode is closer to the substrate than the top electrode, the region between the bottom electrode and the top electrode defining an electronically active region, wherein the electronically active region includes a scattering layer having a thickness of less than 50 nm; and an organic light emitting device additionally having at least one light emitting layer in the electronically active region, and this device can also include a specific chemical compound outside of the electronically active region.

Abstract: The invention relates to an organic photovoltaic device, in a layered structure, comprising a substrate, a bottom electrode, a top electrode, wherein the bottom electrode is closer to the substrate than the top electrode, an electronically active region, the electronically active region being provided between and being in electrical contact with the bottom electrode and the top electrode, a light absorbing region provided in the electronically active region, and at least one of a non-flat layer provided in the electronically active region, and an electronically inactive non-flat layer provided between the substrate and the bottom electrode. Furthermore, the invention relates to a method of producing a photovoltaic device.

Abstract: The invention relates to an organic electron component having a first electrode, a second electrode, a channel layer comprising an organic semiconducting material and a dopant material.

Abstract: The invention concerns a semiconductor component with a layered arrangement with an electrode, an organic semiconductor layer, an injection layer, and an additive layer, which consists of an additive, which on contact with the molecular doping material modifies its doping affinity with respect to the organic material of the organic semiconductor layer, wherein in the injection layer a layered region is formed with a first doping affinity of the molecular doping material with respect to the organic material and a further layered region is formed with a second, in comparison to the first doping affinity smaller, doping affinity of the molecular doping material with respect to the organic material. Furthermore the invention concerns a method for the manufacture of a semiconductor component and also the application of a semiconductor component.

Abstract: The present invention relates to an organic light emitting device comprising a layered structure including a substrate, a bottom electrode and a top electrode, wherein the bottom electrode is closer to the substrate than the top electrode, the region between the bottom electrode and the top electrode defining an electronically active region, wherein the electronically active region comprises a scattering layer having a thickness of less than 50 nm; and an organic light emitting device additionally having at least one light emitting layer in the electronically active region, and this device further comprising a specific chemical compound outside of the electronically active region.

Abstract: The invention concerns a semiconductor component with a layered arrangement with an electrode, an organic semiconductor layer, an injection layer, and an additive layer, which consists of an additive, which on contact with the molecular doping material modifies its doping affinity with respect to the organic material of the organic semiconductor layer, wherein in the injection layer a layered region is formed with a first doping affinity of the molecular doping material with respect to the organic material and a further layered region is formed with a second, in comparison to the first doping affinity smaller, doping affinity of the molecular doping material with respect to the organic material. Furthermore the invention concerns a method for the manufacture of a semiconductor component and also the application of a semiconductor component.

Abstract: The invention relates to an organic electronic luminescent component with an arrangement of organic layers formed between an electrode and a counter electrode, wherein said arrangement of organic layers is electrically insulated from the electrode and the counter electrode and comprises a light-emitting layer and a charge carrier generation region allocated to the light-emitting layer, wherein the charge carrier generation region is configured to provide positive and negative charge carriers at an application of an electrical AC voltage to the electrode and the counter electrode and wherein a pn-layer transition is formed in the charge carrier generation region by means of a p-doped organic layer and a n-doped organic layer arranged next to the p-doped organic layer.

Abstract: The invention relates to a method for producing a layer structure in an electronic device, especially in an organic light emitting device, the method comprising a step of producing the layer structure as a composite layer structure with free charge carriers generated by charge transfer between a first material and a second material, wherein the composite layer structure is provided as a stack of at least three non-mixed sub-layers made of the first material and the second material, respectively, wherein within the stack of the at least three non-mixed sub-layers each first material sub-layer is followed by an adjacent second material sub-layer and each second material sub-layer is followed by an adjacent first material sub-layer, and wherein the first material and the second material are selected to form a host-dopant material system for the electrical doping. The invention also relates to an electronic device.

Abstract: The invention relates to an organic electronic luminescent component with an arrangement of organic layers formed between an electrode and a counter electrode, wherein said arrangement of organic layers is electrically insulated from the electrode and the counter electrode and comprises a light-emitting layer and a charge carrier generation region allocated to the light-emitting layer, wherein the charge carrier generation region is configured to provide positive and negative charge carriers at an application of an electrical AC voltage to the electrode and the counter electrode and wherein a pn-layer transition is formed in the charge carrier generation region by means of a p-doped organic layer and a n-doped organic layer arranged next to the p-doped organic layer.

Abstract: The invention relates to an organic field-effect transistor, in particular an organic thin-layer field-effect transistor, with a gate electrode, a drain electrode and a source electrode, an active layer of organic material which during operation is configured to form an electrical line channel, a dielectric layer which electrically isolates the active layer from the gate electrode, a dopant material layer which consists of a molecular dopant material whose molecules consist of two or more atoms and which dopant material is an electrical dopant for the organic material of the active layer, and wherein the dopant material layer is formed in a boundary surface region between the active layer and the dielectric layer or is formed adjacent to the boundary surface region.

Abstract: An electronic component, having an anode, a cathode and at least one organic layer arrangement, arranged between the anode and cathode and is in electrical contact with the anode and cathode and has at least one of the following: a zone which generates electrical charges upon application of an electric potential to the anode and cathode and has an np-junction, which is formed with a layer of a p-type organic semiconductor material and an n-doped layer of an n-type organic semiconductor material, which is in contact with a conductive layer of the anode, and a zone which generates further electrical charges upon application of the electric potential to the anode and cathode and has a pn-junction, which is formed with a layer of an n-type organic semiconductor material and a p-doped layer of a p-type organic semiconductor material, which is in contact with a conductive layer of the cathode.