Patents by Inventor Tobias CRAMER

Tobias CRAMER has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Sensitive field effect device and manufacturing method thereof
    Patent number: 11360044
    Abstract: The present invention concerns a sensitive field effect device (100) comprising a semiconductor channel (110), a source electrode (120) connected to said semiconductor channel (110), a drain electrode (130) connected to said semiconductor channel (110), such that said semiconductor channel (110) is interposed between said source electrode (120) and said drain electrode (130), a gate electrode (140) and a dielectric layer (150) interposed between said gate electrode (140) and said semiconductor channel (110), characterized in that said semiconductor channel (110) is a layer and is made of an amorphous oxide and in that said sensor means (170, 171, 172, 173, 174, 175, 175) are configured to change the voltage between said gate electrode (140) and said source electrode (120) upon a sensing event capable of changing their electrical state. The present invention also concerns a sensor and a method for manufacturing said field effect device (100).
    Type: Grant
    Filed: March 14, 2017
    Date of Patent: June 14, 2022
    Assignees: Universidade Nova de Lisboa, Alma Mater Studiorum—Universita di' Bologna
    Inventors: Rodrigo Ferräo De Paiva Martins, Pedro Miguel Cândido Barquinha, Elvira Maria Correia Fortunato, Tobias Cramer, Beatrice Fraboni
  • SENSITIVE FIELD EFFECT DEVICE AND MANUFACTURING METHOD THEREOF
    Publication number: 20190277798
    Abstract: The present invention concerns a sensitive field effect device (100) comprising a semiconductor channel (110), a source electrode (120) connected to said semiconductor channel (110), a drain electrode (130) connected to said semiconductor channel (110), such that said semiconductor channel (110) is interposed between said source electrode (120) and said drain electrode (130), a gate electrode (140) and a dielectric layer (150) interposed between said gate electrode (140) and said semiconductor channel (110), characterized in that said semiconductor channel (110) is a layer and is made of an amorphous oxide and in that said sensor means (170, 171, 172, 173, 174, 175, 175) are configured to change the voltage between said gate electrode (140) and said source electrode (120) upon a sensing event capable of changing their electrical state. The present invention also concerns a sensor and a method for manufacturing said field effect device (100).
    Type: Application
    Filed: March 14, 2017
    Publication date: September 12, 2019
    Inventors: Rodrigo FERRÃO DE PAIVA MARTINS, Pedro Miguel Candido BARQUINHA, Elvira Maria CORREIA FORTUNATO, Tobias CRAMER, Beatrice FRABONI