Abstract: A method of forming a semiconductor device includes providing a base substrate comprising SiC and a growth surface extending along a plane that is angled relative to a first crystallographic plane of the SiC from the base substrate, forming first and second trenches in the base substrate that extend from the growth surface into the base substrate, epitaxially forming a first SiC layer on the growth surface of the base substrate by a step-controlled epitaxy technique, and epitaxially forming a second SiC layer on the first SiC layer, wherein the first SiC layer is a layer of ?-SiC, and wherein the second SiC layer is a layer of ?-SiC.

Abstract: A semiconductor substrate includes a base portion, an auxiliary layer and a surface layer. The auxiliary layer is formed on the base portion. The surface layer is formed on the auxiliary layer. The surface layer is in contact with a first main surface of the semiconductor substrate. The auxiliary layer has a different electrochemical dissolution efficiency than the base portion and the surface layer. At least a portion of the auxiliary layer and at least a portion of the surface layer are converted into a porous structure. Subsequently, an epitaxial layer is formed on the first main surface.

Abstract: The disclosure provides an approach for a non-disruptive system upgrade. Embodiments include installing an upgraded version of an operating system (OS) on a computing system while a current version of the OS continues to run. Embodiments include entering a maintenance mode on the computing system, including preventing the addition of new applications and modifying the handling of storage operations on the computing system for the duration of the maintenance mode. Embodiments include, during the maintenance mode, configuring the upgraded version of the OS. Embodiments include, after configuring the upgraded version of the OS, suspending a subset of applications running on the computing system, transferring control over resources of the computing system to the upgraded version of the OS, and resuming the subset of the applications running on the computing system. Embodiments include exiting the maintenance mode on the computing system.

Abstract: The disclosure provides an approach for a non-disruptive system upgrade. Embodiments include installing an upgraded version of an operating system (OS) on a computing system while a current version of the OS continues to run. Embodiments include entering a maintenance mode on the computing system, including preventing the addition of new applications and modifying the handling of storage operations on the computing system for the duration of the maintenance mode. Embodiments include, during the maintenance mode, configuring the upgraded version of the OS. Embodiments include, after configuring the upgraded version of the OS, suspending a subset of applications running on the computing system, transferring control over resources of the computing system to the upgraded version of the OS, and resuming the subset of the applications running on the computing system. Embodiments include exiting the maintenance mode on the computing system.

Abstract: A transistor device and a method for forming a transistor device are disclosed. The transistor device includes: a SiC semiconductor body that includes a first semiconductor layer and a second semiconductor layer formed on top of the first semiconductor; a trench structure extending from a first surface of the semiconductor body through the second semiconductor layer into the first semiconductor layer; a drain region arranged in the first semiconductor layer; and a plurality of transistor cells each coupled between the drain region and a source node. The trench structure subdivides the second semiconductor layer into a plurality of mesa regions and includes at least one cavity. At least one of the plurality of transistor cells is at least partially integrated in each of the mesa regions.

Abstract: A carrier configured to be attached to a semiconductor substrate via a first surface comprises a continuous carbon structure defining a first surface of the carrier, and a reinforcing material constituting at least 2 vol-% of the carrier.

Abstract: The disclosure provides an approach for a non-disruptive system upgrade. Embodiments include installing an upgraded version of an operating system (OS) on a computing system while a current version of the OS continues to run. Embodiments include entering a maintenance mode on the computing system, including preventing the addition of new applications and modifying the handling of storage operations on the computing system for the duration of the maintenance mode. Embodiments include, during the maintenance mode, configuring the upgraded version of the OS. Embodiments include, after configuring the upgraded version of the OS, suspending a subset of applications running on the computing system, transferring control over resources of the computing system to the upgraded version of the OS, and resuming the subset of the applications running on the computing system. Embodiments include exiting the maintenance mode on the computing system.

Abstract: Methods for processing a semiconductor substrate are proposed. An example of a method includes forming cavities in the semiconductor substrate by implanting ions through a first surface of the semiconductor substrate. The cavities define a separation layer in the semiconductor substrate. A semiconductor layer is formed on the first surface of the semiconductor substrate. Semiconductor device elements are formed in the semiconductor layer. The semiconductor substrate is separated along the separation layer into a first substrate part including the semiconductor layer and a second substrate part.

Abstract: A semiconductor substrate includes a base portion, an auxiliary layer and a surface layer. The auxiliary layer is formed on the base portion. The surface layer is formed on the auxiliary layer. The surface layer is in contact with a first main surface of the semiconductor substrate. The auxiliary layer has a different electrochemical dissolution efficiency than the base portion and the surface layer. At least a portion of the auxiliary layer and at least a portion of the surface layer are converted into a porous structure. Subsequently, an epitaxial layer is formed on the first main surface.

Abstract: A semiconductor substrate includes a base portion, an auxiliary layer and a surface layer. The auxiliary layer is formed on the base portion. The surface layer is formed on the auxiliary layer. The surface layer is in contact with a first main surface of the semiconductor substrate. The auxiliary layer has a different electrochemical dissolution efficiency than the base portion and the surface layer. At least a portion of the auxiliary layer and at least a portion of the surface layer are converted into a porous structure. Subsequently, an epitaxial layer is formed on the first main surface.

Abstract: The disclosure provides an approach for a non-disruptive system upgrade. Embodiments include installing an upgraded version of an operating system (OS) on a computing system while a current version of the OS continues to run. Embodiments include entering a maintenance mode on the computing system, including preventing the addition of new applications and modifying the handling of storage operations on the computing system for the duration of the maintenance mode. Embodiments include, during the maintenance mode, configuring the upgraded version of the OS. Embodiments include, after configuring the upgraded version of the OS, suspending a subset of applications running on the computing system, transferring control over resources of the computing system to the upgraded version of the OS, and resuming the subset of the applications running on the computing system. Embodiments include exiting the maintenance mode on the computing system.

Abstract: A wafer composite includes a handle substrate, an auxiliary layer formed on a first main surface of the handle substrate, and a silicon carbide structure formed over the auxiliary layer. The handle substrate is subjected to laser radiation that modifies crystalline material along a focal plane in the handle substrate. The focal plane is parallel to the first main surface. The auxiliary layer is configured to stop propagation of microcracks that the laser radiation may generate in the handle substrate.

Abstract: A method for processing a wide band gap semiconductor wafer is proposed. The method includes depositing a non-monocrystalline support layer at a back side of a wide band gap semiconductor wafer, depositing an epitaxial layer at a front side of the wide band gap semiconductor wafer, and splitting the wide band gap semiconductor wafer along a splitting region to obtain a device wafer including at least a part of the epitaxial layer, and a remaining wafer including the non-monocrystalline support layer.

Abstract: Methods for processing a semiconductor substrate are proposed. An example of a method includes forming cavities in the semiconductor substrate by implanting ions through a first surface of the semiconductor substrate. The cavities define a separation layer in the semiconductor substrate. A semiconductor layer is formed on the first surface of the semiconductor substrate. Semiconductor device elements are formed in the semiconductor layer. The semiconductor substrate is separated along the separation layer into a first substrate part including the semiconductor layer and a second substrate part.

Abstract: A method for processing a silicon carbide wafer includes implanting ions into the silicon carbide wafer to form an absorption layer in the silicon carbide wafer. The absorption coefficient of the absorption layer is at least 100 times the absorption coefficient of silicon carbide material of the silicon carbide wafer outside the absorption layer, for light of a target wavelength. The silicon carbide wafer is split along the absorption layer at least by irradiating the silicon carbide wafer with light of the target wavelength to obtain a silicon carbide device wafer and a remaining silicon carbide wafer.

Abstract: A wafer composite includes a handle substrate, an auxiliary layer formed on a first main surface of the handle substrate, and a silicon carbide structure formed over the auxiliary layer. The handle substrate is subjected to laser radiation that modifies crystalline material along a focal plane in the handle substrate. The focal plane is parallel to the first main surface. The auxiliary layer is configured to stop propagation of microcracks that the laser radiation may generate in the handle substrate.

Abstract: A clinical diagnostic system is presented and comprises a sample preparation station for automatically preparing samples comprising analytes of interest, a liquid chromatography (LC) separation station comprising a plurality of LC channels and a sample preparation/LC interface for inputting prepared samples into the LC channels. The system further comprises a controller to assign samples to pre-defined sample preparation workflows each comprising a pre-defined sequence of sample preparation steps and requiring a pre-defined time for completion depending on the analytes. The controller further assigns an LC channel for each prepared sample depending on the analytes and plans an LC channel input sequence for inputting the prepared samples that allows analytes from different LC channels to elute in a non-overlapping LC eluate output sequence based on expected elution times.

Abstract: A semiconductor substrate includes a base portion, an auxiliary layer and a surface layer. The auxiliary layer is formed on the base portion. The surface layer is formed on the auxiliary layer. The surface layer is in contact with a first main surface of the semiconductor substrate. The auxiliary layer has a different electrochemical dissolution efficiency than the base portion and the surface layer. At least a portion of the auxiliary layer and at least a portion of the surface layer are converted into a porous structure. Subsequently, an epitaxial layer is formed on the first main surface.

Abstract: A carrier configured to be attached to a semiconductor substrate via a first surface comprises a continuous carbon structure defining a first surface of the carrier, and a reinforcing material constituting at least 2 vol-% of the carrier.

Abstract: An induction charging device for a partially or fully electrically operated motor vehicle may include a flat temperature control arrangement, a flat charging arrangement, and a heater. The temperature control arrangement may include at least one channel through which a cooling fluid is flowable. The charging arrangement may include at least one charging coil inductively couplable to an external primary coil during a charging process such that a battery of a vehicle is chargeable. The charging arrangement may be coupled to the temperature control arrangement to transfer heat such that a waste heat of the at least one charging coil during the charging process is transferable to the cooling fluid. The heater may be coupled to the temperature control arrangement to transfer heat such that a waste heat of the heater is transferable to the cooling fluid during the charging process and outside of the charging process.