Abstract: A mirror (1) for EUV lithography includes a substrate (2) and a reflective coating (3, 4). The reflective coating has a first group (3) of layers (3a, 3b) and a second group (4) of layers (4a, 4b), wherein the first group and second group of layers (3a, 3b; 4a, 4b) reflect radiation having a used wavelength between 5 nm and 30 nm. The first group of layers is arranged between the substrate and the second group of layers, and a decoupling coating (6) is arranged between the first group and second group of layers, said decoupling coating optically decoupling the second group of layers from the first group of layers by preventing the radiation having the used wavelength from reaching the first group of layers. The reflective coating preferably has a correction layer (5) having a layer thickness variation for correcting the surface form of the mirror.

Abstract: A mirror (1) for EUV lithography includes a substrate (2) and a reflective coating (3, 4). The reflective coating has a first group (3) of layers (3a, 3b) and a second group (4) of layers (4a, 4b), wherein the first group and second group of layers (3a, 3b; 4a, 4b) reflect radiation having a used wavelength between 5 nm and 30 nm. The first group of layers is arranged between the substrate and the second group of layers, and a decoupling coating (6) is arranged between the first group and second group of layers, said decoupling coating optically decoupling the second group of layers from the first group of layers by preventing the radiation having the used wavelength from reaching the first group of layers. The reflective coating preferably has a correction layer (5) having a layer thickness variation for correcting the surface form of the mirror.

Abstract: To prevent reflective optical elements (2) for EUV lithography from becoming electrically charged as they are irradiated with EUV radiation (4), an optical system for EUV lithography is proposed, having a reflective optical element (2), including a substrate (21) with a highly reflective coating (22) emitting secondary electrons when irradiated with EUV radiation (4), and a source (3) of electrically charged particles, which is arranged in such a manner that electrically charged particles are applied to the reflective optical element (2), wherein the source (3) for the charge carrier compensation is exclusively a flood gun applying electrons to the reflective optical element (2).