Abstract: An integrated semiconductor circuit includes a cell array having memory cells which can be read by word lines and bit lines. Two bit lines in each case are connected to inputs of the same signal amplifier. In order to compensate for parasitic capacitances which arise at thin sidewall insulations between the patterned word lines and adjacent bit line contacts which connect the bit lines located at a higher level to the active regions located at a deeper level, two additional word lines and dummy contacts of the bit lines are dummy contacts lead past this additional word lines. The additional parasitic capacitances produced by the dummy contacts alter the electrical potential of the respective reference bit line at the signal amplifier in the same way as the parasitic capacitances of activated bit lines, as a result of which the measured differential potential is corrected with respect to the parasitic effects.

Abstract: An integrated semiconductor circuit can have memory cells, which can be read by word lines and bit lines. Two mutually adjacent bit lines in each case are connected to inputs of the same signal amplifier. In order to compensate for parasitic capacitors, which arise at thin sidewall insulations between the patterned word lines and adjacent bit line contacts, additional contact structures which lead past the word lines and represent dummy contacts can be provided. The additional parasitic capacitances produced by the dummy contact alter the electrical potential of the respective reference bit line at the signal amplifier like the parasitic capacitances of activated bit lines, as a result of which the measured differential potential can be corrected with respect to the parasitic effects.

Abstract: A memory chip having an integrated address scrambler unit that has address inputs for applying an address and can be to scramble the address in various ways depending on control bits. In addition, a memory cell array is provided, which is connected downstream of the address scrambler unit. This allows an increase in flexibility during scrambling.

Abstract: A method includes providing a semiconductor memory device having at least one memory cell array. The memory cell array has a multiplicity of memory cells arranged in a matrix-like manner. Each of the memory cells is assigned a physical address and an electrical address. The method also includes inputting a physical address of a memory cell that is to be addressed into an address input device of the semiconductor memory device, decoding the input physical address into the assigned electrical address of the memory cell to be addressed by an address decoder device of the semiconductor memory device, and outputting the electrical address to the memory cell array in order to address the memory cell.

Abstract: An integrated semiconductor circuit can have memory cells, which can be read by word lines and bit lines. Two mutually adjacent bit lines in each case are connected to inputs of the same signal amplifier. In order to compensate for parasitic capacitors, which arise at thin sidewall insulations between the patterned word lines and adjacent bit line contacts, additional contact structures which lead past the word lines and represent dummy contacts can be provided. The additional parasitic capacitances produced by the dummy contact alter the electrical potential of the respective reference bit line at the signal amplifier like the parasitic capacitances of activated bit lines, as a result of which the measured differential potential can be corrected with respect to the parasitic effects.

Abstract: An integrated semiconductor circuit includes a cell array havinb memory cells which can be read by word lines and bit lines. Two bit lines in each case are connected to inputs of the same signal amplifier. In order to compensate for parasitic capacitances which arise at thin sidewall insulations between the patterned word lines and adjacent bit line contacts which connect the bit lines located at a higher level to the active regions located at a deeper level, two additional word lines and dummy contacts of the bit lines are dummy contacts lead past this additional word lines. The additional parasitic capacitances produced by the dummy contacts alter the electrical potential of the respective reference bit line at the signal amplifier in the same way as the parasitic capacitances of activated bit lines, as a result of which the measured differential potential is corrected with respect to the parasitic effects.

Abstract: The invention relates to a semiconductor memory device having