Patents by Inventor Tobias Letz

Tobias Letz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 8859398
    Abstract: Adhesion of dielectric layer stacks to be formed after completing the basic configuration of transistor elements may be increased by avoiding the formation of a metal silicide in the edge region of the substrate. For this purpose, a dielectric protection layer may be selectively formed in the edge region prior to a corresponding pre-clean process or immediately prior to deposition of the refractory metal. Hence, non-reacted metal may be efficiently removed from the edge region without creating a non-desired metal silicide. Hence, the further processing may be continued on the basis of enhanced process conditions for forming interlayer dielectric materials.
    Type: Grant
    Filed: March 30, 2010
    Date of Patent: October 14, 2014
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Tobias Letz, Frank Feustel, Kai Frohberg
  • Patent number: 8841140
    Abstract: By determining at least one surface characteristic of a passivation layer stack used for forming a bump structure, the situation after the deposition and patterning of a terminal metal layer stack may be “simulated,” thereby providing the potential for using well-established bump manufacturing techniques while nevertheless significantly reducing process complexity by omitting the deposition and patterning of the terminal metal layer stack.
    Type: Grant
    Filed: May 18, 2007
    Date of Patent: September 23, 2014
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Tobias Letz, Matthias Lehr, Joerg Hohage, Frank Kuechenmeister
  • Patent number: 8673087
    Abstract: A method for treating a semiconductor device includes dissolving an inert gas species in a wet chemical cleaning solution and treating a material layer of a semiconductor device with the wet chemical cleaning solution in ambient atmosphere. The inert gas species is oversaturated in the wet chemical cleaning solution in the ambient atmosphere.
    Type: Grant
    Filed: May 21, 2008
    Date of Patent: March 18, 2014
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Frank Feustel, Tobias Letz, Christin Bartsch, Andreas Ott
  • Patent number: 8426312
    Abstract: By providing an etch stop layer selectively at the bevel, at least one additional wet chemical bevel etch process may be performed prior to or during the formation of a metallization layer without affecting the substrate material. Hence, the dielectric material, especially the low-k dielectric material, may be reliably removed from the bevel prior to the formation of any barrier and metal layers. The etch stop layer may be formed at an early manufacturing stage so that a bevel etch process may be performed at any desired stage of the formation of circuit elements.
    Type: Grant
    Filed: September 14, 2006
    Date of Patent: April 23, 2013
    Assignee: Globalfoundries Inc.
    Inventors: Ralf Richter, Tobias Letz, Holger Schuehrer
  • Patent number: 8323989
    Abstract: During the formation of a complex metallization system, the influence of a manufacturing environment on sensitive barrier/seed material systems may be monitored or controlled by using an appropriate test pattern and applying an appropriate test strategy. For example, actual probe and reference substrates may be prepared and may be processed with and without exposure to the manufacturing environment of interest, thereby enabling an efficient evaluation of one or more parameters of the environment. Furthermore, an “optimized” manufacturing environment may be obtained on the basis of the test strategy disclosed herein.
    Type: Grant
    Filed: March 30, 2010
    Date of Patent: December 4, 2012
    Assignee: GLOBALFOUNDRIES, Inc.
    Inventors: Frank Feustel, Tobias Letz, Frank Koschinsky
  • Patent number: 8193086
    Abstract: Electromigration behavior in complex metallization systems of semiconductor devices may be enhanced at critical areas between a metal line and a via by locally forming a copper/silicon compound. In some illustrative embodiments, the formation of the copper/silicon compound may be combined with other treatments for cleaning the exposed surface areas and/or modifying the molecular structure thereof.
    Type: Grant
    Filed: December 17, 2009
    Date of Patent: June 5, 2012
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Tobias Letz, Frank Feustel
  • Patent number: 7924569
    Abstract: By providing thermoelectric elements, such as Peltier elements, in a semiconductor device, the overall heat management may be increased. In some illustrative embodiments, the corresponding active cooling/heating systems may be used in a stacked chip configuration to establish an efficient thermally conductive path between temperature critical circuit portions and a heat sink of the stacked chip configuration.
    Type: Grant
    Filed: September 1, 2009
    Date of Patent: April 12, 2011
    Assignee: Advanced Micro Devices, Inc.
    Inventor: Tobias Letz
  • Patent number: 7879709
    Abstract: A semiconductor structure comprises a semiconductor substrate. A layer of an electrically insulating material is formed over the semiconductor substrate. An electrically conductive feature is formed in the layer of electrically insulating material. A first layer of a semiconductor material is formed between the electrically conductive feature and the layer of electrically insulating material.
    Type: Grant
    Filed: April 1, 2008
    Date of Patent: February 1, 2011
    Assignee: GLOBALFOUNDRIES Inc.
    Inventors: Frank Feustel, Tobias Letz, Carsten Peters
  • Publication number: 20100289125
    Abstract: In sophisticated semiconductor devices, the electromigration performance of copper metal lines at the top interface thereof may be enhanced by forming a copper alloy that is locally restricted to the interface. To this end, an appropriate alloy-forming species, such as aluminum, may be provided on the basis of a non-masked deposition process and may be subsequently removed by a non-masked etch process, wherein the characteristic of the resulting alloy may be adjusted during an intermediate heat treatment.
    Type: Application
    Filed: April 28, 2010
    Publication date: November 18, 2010
    Inventors: Frank Feustel, Tobias Letz, Axel Preusse
  • Patent number: 7820536
    Abstract: By forming a thin passivation layer after the formation of openings connecting to a highly reactive metal region, any queue time effects may be significantly reduced. Prior to the deposition of a barrier/adhesion layer, the passivation layer may be efficiently removed on the basis of a heat treatment so as to initiate material removal by evaporation.
    Type: Grant
    Filed: August 31, 2006
    Date of Patent: October 26, 2010
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Holger Schuehrer, Tobias Letz, Frank Koschinsky
  • Publication number: 20100248463
    Abstract: Adhesion of dielectric layer stacks to be formed after completing the basic configuration of transistor elements may be increased by avoiding the formation of a metal silicide in the edge region of the substrate. For this purpose, a dielectric protection layer may be selectively formed in the edge region prior to a corresponding pre-clean process or immediately prior to deposition of the refractory metal. Hence, non-reacted metal may be efficiently removed from the edge region without creating a non-desired metal silicide. Hence, the further processing may be continued on the basis of enhanced process conditions for forming interlayer dielectric materials.
    Type: Application
    Filed: March 30, 2010
    Publication date: September 30, 2010
    Inventors: Tobias Letz, Frank Feustel, Kai Frohberg
  • Publication number: 20100244028
    Abstract: During the formation of a complex metallization system, the influence of a manufacturing environment on sensitive barrier/seed material systems may be monitored or controlled by using an appropriate test pattern and applying an appropriate test strategy. For example, actual probe and reference substrates may be prepared and may be processed with and without exposure to the manufacturing environment of interest, thereby enabling an efficient evaluation of one or more parameters of the environment. Furthermore, an “optimized” manufacturing environment may be obtained on the basis of the test strategy disclosed herein.
    Type: Application
    Filed: March 30, 2010
    Publication date: September 30, 2010
    Inventors: Frank Feustel, Tobias Letz, Frank Koschinsky
  • Patent number: 7781343
    Abstract: By forming a protection layer on the back side of a substrate prior to any process sequences, which may deposit material or material residues on the back side, the respective back side uniformity may be significantly enhanced, thereby also increasing process efficiency of subsequent back side critical processes, such as lithography, back end of line processes and the like. In one illustrative embodiment, silicon carbide may be used as a material for forming a respective protection layer.
    Type: Grant
    Filed: June 4, 2007
    Date of Patent: August 24, 2010
    Assignee: Globalfoundries Inc.
    Inventors: Tobias Letz, Holger Schuehrer, Markus Nopper
  • Publication number: 20100164123
    Abstract: Electromigration behavior in complex metallization systems of semiconductor devices may be enhanced at critical areas between a metal line and a via by locally forming a copper/silicon compound. In some illustrative embodiments, the formation of the copper/silicon compound may be combined with other treatments for cleaning the exposed surface areas and/or modifying the molecular structure thereof.
    Type: Application
    Filed: December 17, 2009
    Publication date: July 1, 2010
    Inventors: Tobias Letz, Frank Feustel
  • Publication number: 20100079959
    Abstract: By providing thermoelectric elements, such as Peltier elements, in a semiconductor device, the overall heat management may be increased. In some illustrative embodiments, the corresponding active cooling/heating systems may be used in a stacked chip configuration to establish an efficient thermally conductive path between temperature critical circuit portions and a heat sink of the stacked chip configuration.
    Type: Application
    Filed: September 1, 2009
    Publication date: April 1, 2010
    Inventor: Tobias Letz
  • Publication number: 20090139543
    Abstract: By exposing a wet chemical cleaning solution, such as hydrofluoric acid, to a pressurized inert gas ambient prior to applying the solution to patterned dielectric materials of semiconductor devices, the incorporation of oxygen into the liquid during storage and application may be significantly reduced. For instance, by generating a substantially saturated state in the pressurized inert gas ambient, a substantially oversaturated state may be achieved during the application of the liquid in ambient air, thereby enhancing efficiency of the treatment, for instance, by reducing the amount of material removal of exposed copper surfaces after trench patterning, without requiring sophisticated modifications of process chambers.
    Type: Application
    Filed: May 21, 2008
    Publication date: June 4, 2009
    Inventors: Frank Feustel, Tobias Letz, Christin Bartsch, Andreas Ott
  • Publication number: 20090085145
    Abstract: A semiconductor structure comprises a semiconductor substrate. A layer of an electrically insulating material is formed over the semiconductor substrate. An electrically conductive feature is formed in the layer of electrically insulating material. A first layer of a semiconductor material is formed between the electrically conductive feature and the layer of electrically insulating material.
    Type: Application
    Filed: April 1, 2008
    Publication date: April 2, 2009
    Inventors: Frank Feustel, Tobias Letz, Carsten Peters
  • Publication number: 20090032961
    Abstract: By forming an alloy in a highly localized manner at a transition or contact area between a via and a metal line, the probability of forming an electromigration-induced shallow void may be significantly reduced, while not unduly affecting the overall electrical resistivity of the metal line. In one illustrative embodiment, an electroless deposition process may provide the alloy-forming species on the exposed metal region on the basis of an electroless plating process.
    Type: Application
    Filed: February 25, 2008
    Publication date: February 5, 2009
    Inventors: Frank Feustel, Tobias Letz, Thomas Werner
  • Publication number: 20080132072
    Abstract: By forming a protection layer on the back side of a substrate prior to any process sequences, which may deposit material or material residues on the back side, the respective back side uniformity may be significantly enhanced, thereby also increasing process efficiency of subsequent back side critical processes, such as lithography, back end of line processes and the like. In one illustrative embodiment, silicon carbide may be used as a material for forming a respective protection layer.
    Type: Application
    Filed: June 4, 2007
    Publication date: June 5, 2008
    Inventors: Tobias Letz, Holger Schuehrer, Markus Nopper
  • Publication number: 20080102540
    Abstract: By determining at least one surface characteristic of a passivation layer stack used for forming a bump structure, the situation after the deposition and patterning of a terminal metal layer stack may be “simulated,” thereby providing the potential for using well-established bump manufacturing techniques while nevertheless significantly reducing process complexity by omitting the deposition and patterning of the terminal metal layer stack.
    Type: Application
    Filed: May 18, 2007
    Publication date: May 1, 2008
    Inventors: Tobias Letz, Matthias Lehr, Joerg Hohage, Frank Kuechenmeister