Abstract: In accordance with an embodiment, a method for operating a thermal emitter having an electrically conductive semiconductor section includes: providing during an operational cycle, an activation signal having a first energy level to the electrically conductive semiconductor section of the thermal emitter for emitting infrared (IR) radiation; and providing, during a refresh cycle, a refresh signal having a second energy level to the electrically conductive semiconductor section of the thermal emitter, where the second energy level is different from the first energy level.

Abstract: In accordance with an embodiment, a semiconductor device includes: a radiator comprising a radiation layer configured to radiate an electromagnetic wave; a detector comprising a detection layer configured to detect the electromagnetic wave; a substrate; and an interface layer arranged between the radiator or the detector and the substrate, where a thermal conductivity of the radiator or the detector is different from a thermal conductivity of the interface layer.

Abstract: A package for an optical radiation device comprises a base structure having arranged thereon an optical radiation device, an optically transparent lid element bonded to the base structure defining a cavity between the base structure and the lid element, and a bond structure in a bonding region between the base structure and the lid element, wherein the bond structure is arranged to provide an adhesive bond between the base structure and the lid element, and wherein the bond structure comprises a diffusion layer having a gas diffusive material or gas diffusive structure for providing a gas diffusion path between the cavity and the surrounding atmosphere.

Abstract: A detector cell for a photoacoustic gas sensor comprises a first layer structure, a second layer structure arranged at the first layer structure and comprising a membrane structure, and a third layer structure arranged at the second layer structure. The first layer structure and the third layer structure hermetically enclose a cavity, wherein the membrane structure is arranged in the cavity.

Abstract: A detector cell for a photoacoustic gas sensor comprises a first layer structure, a second layer structure arranged at the first layer structure and comprising a membrane structure, and a third layer structure arranged at the second layer structure. The first layer structure and the third layer structure hermetically enclose a cavity, wherein the membrane structure is arranged in the cavity.

Abstract: A detector cell for a photoacoustic gas sensor comprises a first layer structure, a second layer structure arranged at the first layer structure and comprising a membrane structure, and a third layer structure arranged at the second layer structure. The first layer structure and the third layer structure hermetically enclose a cavity, wherein the membrane structure is arranged in the cavity.

Abstract: A detector cell for a photoacoustic gas sensor comprises a first layer structure, a second layer structure arranged at the first layer structure and comprising a membrane structure, and a third layer structure arranged at the second layer structure. The first layer structure and the third layer structure hermetically enclose a cavity, wherein the membrane structure is arranged in the cavity.