Patents by Inventor Tobias Repmann
Tobias Repmann has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230136328Abstract: The invention relates to a thin film solar module comprising a monolithic solar cell array (1), including a plurality of solar cells (2) with a layer structure, comprising a rear contact layer (3), a front contact layer (4) and an absorber layer between the rear contact layer and the front contact layer, and an electrical connection structure (6) for electrically serially connecting neighbouring solar cells. The invention also relates to an associated production method. In the thin film solar module according to the invention, the electrical connection structure includes contact strips (7) for electrically serially connecting neighbouring solar cells, wherein the electrical connection structure electrically serially connects two respective solar cells (2m, 2m+1) that are adjacent to one another in a series connection direction (RS) via one or more contact strips (7).Type: ApplicationFiled: March 18, 2021Publication date: May 4, 2023Applicant: First Solar GmbHInventors: Rolf Wächter, Tobias Repmann, Bernd Sprecher
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Patent number: 8425793Abstract: A simple process is disclosed for treating substrates having pre-structured zinc oxide layers on rigid or flexible supports. The ZnO is treated with an etching medium then with a cleaning liquid. The treatment with the etching and cleaning liquids is carried out while the substrate is conveyed through a device. The process is technically simple to implement and makes it possible to regularly and homogeneously roughen and texturize ZnO layers of up to 1 m2. The device for treating substrates having pre-structured zinc oxide layers on rigid or flexible supports has for that purpose a first means for treating the substrate with an etching liquid, a second means for treating the substrate with a cleaning liquid, and another means, in particular transport rollers, for conveying the substrate from the first to the second means.Type: GrantFiled: March 31, 2005Date of Patent: April 23, 2013Inventors: Joachim Müller, Gunnar Schöpe, Hildegard Siekmann, Bernd Rech, Tobias Repmann, Wolfgang Apenzeller, Brigitte Sehrbrock
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Publication number: 20120031479Abstract: Methods and devices for manufacturing a TCO layer of a thin film solar cell over a transparent substrate are described. Thereby, a first ZnO-containing layer is puttered with a sputtering method selected from the group consisting of: DC-sputtering, MF-sputtering, pulsed-sputtering, and combinations thereof, over the substrate with a first set of deposition parameters, a second ZnO-containing layer is puttered with a sputtering method selected from the group consisting of: DC-sputtering, MF-sputtering, pulsed-sputtering, and combinations thereof, over the first ZnO-containing layer with a second set of deposition parameters, at least one of the deposition parameters of the second set of deposition parameters is different from the corresponding parameter of the first set of deposition parameters; and the second ZnO-containing layer is textured.Type: ApplicationFiled: August 11, 2010Publication date: February 9, 2012Applicant: APPLIED MATERIALS, INC.Inventors: Markus KRESS, Tobias REPMANN, Daniel SEVERIN
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Patent number: 7927907Abstract: The invention relates to a method for producing solar cells comprising at least one p-i-n layer sequence containing micro-crystalline layers with the aid of a PECVD method. Said method is characterised in that all layers of the p-i-n layer sequence are deposited in a single-chamber process. The electrodes are interspaced at a distance of between 5 and 15 mm and the gas is distributed by means of a shower-head gas inlet, which guarantees a homogeneous distribution of the gas over the substrate. SiH4 gas streams with values of between 0.01 and 3 sccm/cm2 are added with a process pressure of between 8 and 50 hPa. The heater temperature is set at between 50 and 280° C. and the HF output is between 0.2 and 2 watt/cm2. The H2 gas streams have values of between 0.3 and 30 sccm/cm2, in particular between 0.3 and 10 sccm/cm2.Type: GrantFiled: December 16, 2004Date of Patent: April 19, 2011Assignee: Forschungszentrum Julich GmbHInventors: Tobias Repmann, Bernd Rech
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Publication number: 20100314705Abstract: A semiconductor device module is provided, including a number of n semiconductor devices formed on a substraten being an integer?2; each semiconductor device having a stack of a first contact layer region, a semiconductor layer region, and a second contact layer region wherein the first contact layer region of each (n?1)th semiconductor device is connected to the second contact layer region of the nth semiconductor device by an interconnection; and wherein, of the first and second contact layer regions, at least the first contact layer region of at least one of the semiconductor devices has a varying thickness, the thickness being maximum at the interconnection.Type: ApplicationFiled: June 17, 2009Publication date: December 16, 2010Applicant: APPLIED MATERIALS, INC.Inventors: Tobias Repmann, Axel Straub
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Publication number: 20100263719Abstract: The invention relates to a thin-film solar cell module (71) in which a layer (72) of TCO is applied on a glass substrate (73). On this layer (72) of TCO is disposed a semiconductor layer (75) on which is applied an electrically conducting backside layer (85). The backside layer (85) includes a bridge element (88) in contact with the layer (72) of TCO. Directly on the layer (72) of TCO are applied busbars (82) by means of a printing method. The busbars (82) are herein connected with the backside layer (85) via the layer (72) of TCO.Type: ApplicationFiled: April 16, 2009Publication date: October 21, 2010Inventors: Axel Straub, Tobias Repmann
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Publication number: 20100190275Abstract: A laser scribing device is provided which comprises at least a laser light source. The laser light source may generate a laser beam for scribing cell lines to form a patterned solar cell module. Furthermore, the laser may emit a light beam for generating a light spot on the surface of the solar cell module. The light beam may be modulated compared with the light beam used for the scribing process. By means of the light spot a particular region of the active area of the solar cell module may be illuminated, and the voltage VOC (L) may be measured at a voltage measurement device. The voltage measurement device is connected between the negative contact area and the positive contact area of the solar cell module. The measured voltage VOC (L) depends on the location of the laser spot on the solar cell module and the intensity of the laser spot.Type: ApplicationFiled: January 29, 2009Publication date: July 29, 2010Applicant: Applied Materials, Inc.Inventors: Tobias Repmann, Axel Straub
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Publication number: 20100139753Abstract: A solar cell module comprises a transparent substrate, e.g., a glass substrate. On top of the glass substrate a layer system is deposited. The layer system comprises a front electrode which may be a transparent conductive oxide (TCO) layer. Furthermore, the layer system comprises a thin film semiconductor layer deposited on the front electrode layer. A back electrode is formed on the thin film semiconductor layer which includes a very thin metal layer having a thickness d smaller than 50 nm. A Lambertian reflective layer is deposited on the thin metal layer in order to reflect light transmitted through the metal layer.Type: ApplicationFiled: December 5, 2008Publication date: June 10, 2010Applicant: Applied Materials, Inc.Inventors: Tobias Repmann, Axel Straub
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Publication number: 20090044754Abstract: A device is disclosed for supporting a plasma-enhanced coating process. The device is disposed in the vicinity of a plasma and/or a substrate to be coated and/or an electrode provided for plasma generation. The device at least partially surrounds or limits a side or a plane of the plasma area or a plane in which the substrate or a carrying element carrying the substrate can be arranged, or of one of the electrodes or parts. The device comprises a cavity or a suction channel with one or several suction openings through which a gaseous medium can be suctioned off.Type: ApplicationFiled: February 28, 2008Publication date: February 19, 2009Applicant: Applied Materials, Inc.Inventors: Stephan Wieder, Tobias Repmann, Matthias Bibas, Ulf Stephan, Olaff Steinke
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Publication number: 20080296262Abstract: A simple process is disclosed for treating substrates having pre-structured zinc oxide layers on rigid or flexible supports. The ZnO is treated with an etching medium then with a cleaning liquid. The treatment with the etching and cleaning liquids is carried out while the substrate is conveyed through a device. The process is technically simple to implement and makes it possible to regularly and homogeneously roughen and texturise ZnO layers of up to 1 m2. The device for treating substrates having pre-structured zinc oxide layers on rigid or flexible supports has for that purpose a first means for treating the substrate with an etching liquid, a second means for treating the substrate with a cleaning liquid, and another means, in particular transport rollers, for conveying the substrate from the first to the second means.Type: ApplicationFiled: March 31, 2005Publication date: December 4, 2008Inventors: Joachim Muller, Gunnar Schope, Hildegard Siekmann, Bernd Rech, Tobias Repmann, Wolfgang Apenzeller, Brigitte Sehrbrock
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Publication number: 20080274582Abstract: The invention relates to a method for producing solar cells comprising at least one p-i-n layer sequence containing micro-crystalline layers with the aid of a PECVD method. Said method is characterised in that all layers of the p-i-n layer sequence are deposited in a single-chamber process. The electrodes are interspaced at a distance of between 5 and 15 mm and the gas is distributed by means of a shower-head gas inlet, which guarantees a homogeneous distribution of the gas over the substrate. SiH4 gas streams with values of between 0.01 and 3 sccm/cm2 are added with a process pressure of between 8 and 50 hPa. The heater temperature is set at between 50 and 280° C. and the HF output is between 0.2 and 2 watt/cm2. The H2 gas streams have values of between 0.3 and 30 sccm/cm2, in particular between 0.3 and 10 sccm/cm2.Type: ApplicationFiled: December 16, 2004Publication date: November 6, 2008Inventors: Tobias Repmann, Bernd Rech
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Publication number: 20080216747Abstract: A coating installation coating installation includes a process chamber and a gas line system for supplying a gas into the process chamber. The gas line system has at least one feed opening for feeding gases into the gas line system and outlet openings for letting the gas out of the gas line system. Lines are each arranged between the feed opening(s) and the outlet openings. The flow resistance of the lines between the at least one feed opening and the outlet openings is essentially equally large. The gas line system has at least one branch point at which a first line section opens into at least three second line sections connected to the first line section. The first and second line sections are arranged in different levels and branch out like a tree structure. The line sections may be milled as a recess and/or depression in plates.Type: ApplicationFiled: September 4, 2007Publication date: September 11, 2008Applicant: Applied Materials, Inc.Inventors: Stephan Wieder, Tobias Repmann