Abstract: The present invention relates a thermal sensor comprising an ionically conductive composition and a conductive layer, wherein said ionically conductive composition comprises an ionic liquid and a thermoplastic resin. The thermal sensor according to the present invention can be used for sensing a temperature from skin, a metal surface, and a conductive polymer.

Abstract: The present application is directed to a bonded structure comprising: a first substrate having an electrically conductive surface; and, a second substrate having an electrically conductive surface; wherein an electrochemically-debondable pressure sensitive adhesive film is disposed between the electrically conductive surfaces of the first and second substrates, said adhesive film being obtained by drying of a solvent-borne composition comprising, based on the weight of the composition: from 5 to 80 wt. % of a) at least one (meth)acrylate copolymer; from 0.1 to 30 wt. % of b) non-polymerizable electrolyte; and, from 10 to 90 wt. % of c) solvent.

Abstract: The present invention relates to a stimulation electrode comprising an ionically conductive pressure sensitive adhesive composition comprising a) a (meth)acrylate resin comprising at least 10% of a (meth)acrylate monomer comprising OH-group by weight of the total weight of the (meth)acrylate resin; and b) an ionic liquid. The stimulation electrode according to the present invention is used in skin applications transferring an electrical signal to the body via skin.

Abstract: A method of manufacturing a skin-compatible electrode (100) comprises printing a circuit pattern (P1) onto a flexible substrate (200) to form an electrically conductive pattern including an electrode pad area (301). A layer of an adhesive composition (401p) is printed in a second pattern (P2) onto the electrode pad area (301) to form an adhesive interface layer (401). The adhesive interface layer (401) is a dry film formed from the adhesive composition (401p) comprising an ionically conductive pressure sensitive adhesive composition comprising a resin (R), an ionic liquid (I), and optionally electrically conductive particles (P). A layer thickness and material of the flexible substrate, the conductive pattern, and the conductive adhesive interface have relatively low stiffness in plane of the flexible substrate (200).

Abstract: The present invention relates to an ionically conductive pressure sensitive adhesive composition useful as an electrode adhesive, which is an ionically conductive (meth)acrylate based pressure sensitive adhesive allowing prolonged biosignal monitoring times without skin irritation and loss of signal quality.

Abstract: The present invention relates to an electrode comprising a conductive pressure sensitive adhesive layer and a conductive layer. Furthermore, the invention refers to a method of manufacturing the electrode and to the use of the electrode for monitoring biosignals.

Abstract: In the frame of manufacturing a photovoltaic cell a layer (3) of silicon compound is deposited on a structure (1). The yet uncovered surface (3a) is treated in a predetermined oxygen (O2) containing atmosphere which additionally contains a dopant (D). Thereby, the silicon compound layer is oxidized and doped in a thin surface area (5).

Abstract: So as to improve large-scale industrial manufacturing of photovoltaic cells and of the respective converter panels at a photovoltaic cell with a microcrystalline layer of intrinsic silicon compound at least one of the adjacent layers of doped silicon material is conceived as a an amorphous layer.

Abstract: The photovoltaic cell comprises, deposited on a transparent substrate in the following order: a first conductive oxide layer; a first p-i-n junction; a second p-i-n junction; a second conductive oxide layer, wherein said first conductive oxide layer is substantially transparent and comprises a low-pressure chemical vapor deposited ZnO layer; and said second conductive oxide layer comprises an at least partially transparent low-pressure chemical vapor deposited ZnO layer; and wherein said first p-i-n junction comprises in the following order: a layer of p-doped a-Si:H deposited using PECVD and having at its end region facing toward said second p-i-n junction a higher band gap than at its end region facing toward said first conductive oxide layer; a buffer layer of a-Si:H deposited using PECVD without voluntary addition of a dopant; a layer of substantially intrinsic a-Si:H deposited using PECVD; a first layer of n-doped a-Si:H deposited using PECVD; and a layer of n-doped ?c-Si:H deposited using PECVD; and whe

Abstract: A photovoltaic cell comprises an electrode layer (1b) of a transparent, electrically conductive oxide which is deposited upon a transparent carrier substrate (7b). There follows a contact layer (11b) which is of first type doped amorphous silicon and has a thickness of at most 10 nm. There follows a layer (26) of first type doped amorphous silicon compound which has a bandgap which is larger than the bandgap of the material of the addressed contact layer (11b). Subsequently to the first type doped amorphous silicon compound layer (2b) there follows a layer of intrinsic type silicon compound (3b) and a layer of second type doped silicon compound (5b).

Abstract: The present application provides a method for the production of photovoltaic devices, preferably tandem solar cells. The method comprises the steps of: Providing at least one substrate comprising a front contact; and depositing at least a first semiconductor stack onto the substrate to produce a photo-voltaic device; and comprises at least two of the steps of: applying a back contact to the photovoltaic device; contacting of the photovoltaic device; removal of unnecessary material from the edge regions of the photovoltaic device; encapsulation; cross-contacting; and/or framing of the photovoltaic device, wherein the substrate is continuously or semi-continuously moved from one step of the method to the next step of the method. The present application furthermore provides a system to carry out the method of the invention.

Abstract: The inventive method for depositing silicon onto a substrate firstly involves the introduction of a reactive silicon-containing gas and hydrogen into the plasma chamber and then the initiation of the plasma. After initiating the plasma, only reactive silicon-containing gas or a gas mixture containing hydrogen is supplied to the plasma chamber in an alternatively continuous manner, and the gas mixture located inside the chamber is, at least in part, simultaneously withdrawn from the chamber. From the start, homogeneous microcrystalline silicon is deposited onto the substrate in the presence of hydrogen.

Abstract: In the frame of photovoltaic cell manufacturing a silicon compound layer is deposited upon a carrier structure. Manufacturing flexibility is increased on one hand by incorporating ambient air exposure of such silicon compound layer and on the other preventing deterioration of reproducibility by such ambient air exposure by enriching the surface of the addressed silicon compound layer which is to be exposed to ambient air to an oxygen enrichment.

Abstract: So as to improve large-scale industrial manufacturing of photovoltaic cells and of the respective converter panels at a photovoltaic cell with a microcrystalline layer of intrinsic silicon compound at least one of the adjacent layers of doped silicon material is conceived as a an amorphous layer.

Abstract: In the frame of manufacturing a photovoltaic cell a layer (3) of silicon compound is deposited on a structure (1). The yet uncovered surface (3a) is treated in a predetermined oxygen (O2) containing atmosphere which additionally contains a dopant (D). Thereby, the silicon compound layer is oxidized and doped in a thin surface area (5).

Abstract: The inventive method for depositing silicon onto a substrate firstly involves the introduction of a reactive silicon-containing gas and hydrogen into the plasma chamber and then the initiation of the plasma. After initiating the plasma, only reactive silicon-containing gas or a gas mixture containing hydrogen is supplied to the plasma chamber in an alternatively continuous manner, and the gas mixture located inside the chamber is, at least in part, simultaneously withdrawn from the chamber. From the start, homogeneous microcrystalline silicon is deposited onto the substrate in the presence of hydrogen.