Patents by Inventor Tobias S. Doorn

Tobias S. Doorn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Semiconductor Fuse Structure and a Method of Manufacturing a Semiconductor Fuse Structure
    Publication number: 20100230673
    Abstract: The invention relates to a semiconductor fuse structure comprising a substrate (1) having a surface, the substrate (1) having a field oxide region (3) at the surface, the fuse structure further comprising a fuse body (FB), the fuse body (FB) comprising polysilicon (PLY), the fuse body (FB) lying over the field oxide region (3) and extending into a current-flow direction (CF), wherein the fuse structure is programmable by means of leading a current through the fuse body (FB), wherein the fuse body (FB) has a tensile strain in the current-flow direction (CF) and a compressive strain in a direction (Z) perpendicular to said surface of the substrate (1). The invention further relates to methods of manufacturing such a semiconductor fuse.
    Type: Application
    Filed: June 6, 2007
    Publication date: September 16, 2010
    Applicant: NXP B.V.
    Inventors: Claire Ravit, Tobias S. Doorn