Patents by Inventor Tobin Kaufman-Osborn
Tobin Kaufman-Osborn has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11066747Abstract: Implementations described herein relate to apparatus and methods for self-assembled monolayer (SAM) deposition. Apparatus described herein includes processing chambers having various vapor phase delivery apparatus fluidly coupled thereto. SAM precursors may be delivered to process volumes of the chambers via various apparatus which is heated to maintain the precursors in vapor phase. In one implementation, a first ampoule or vaporizer configured to deliver a SAM precursor may be fluidly coupled to the process volume of a process chamber. A second ampoule or vaporizer configured to deliver a material different from the SAM precursor may also be fluidly coupled to the process volume of the process chamber.Type: GrantFiled: March 24, 2017Date of Patent: July 20, 2021Assignee: APPLIED MATERIALS, INC.Inventors: Qiwei Liang, Adib Khan, Tobin Kaufman-Osborn, Srinivas D. Nemani, Ludovic Godet
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Publication number: 20210189562Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.Type: ApplicationFiled: February 23, 2021Publication date: June 24, 2021Applicant: Applied Materials, Inc.Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, David Thompson, Tobin Kaufman-Osborn, Kurt Fredrickson, Thomas Knisley, Liqi Wu
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Patent number: 10954594Abstract: The present disclosure generally relate to a semiconductor processing apparatus. In one embodiment, a processing chamber is disclosed herein. The processing chamber includes a chamber body and lid defining an interior volume, the lid configured to support a housing having a cap, a substrate support disposed in the interior volume, a vaporizer coupled to the cap and having an outlet open to the interior volume of the processing chamber, wherein the vaporizer is configured to deliver a precursor gas to a processing region defined between the vaporizer and the substrate support, and a heater disposed adjacent to the vaporizer, wherein the heater is configured to heat the vaporizer.Type: GrantFiled: December 2, 2015Date of Patent: March 23, 2021Assignee: Applied Materials, Inc.Inventors: Viachslav Babayan, Qiwei Liang, Tobin Kaufman-Osborn, Ludovic Godet, Srinivas D. Nemani
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Patent number: 10947621Abstract: A method and apparatus for delivering gases to a semiconductor processing system are provided. In some embodiments, the apparatus includes a gas inlet line having an inlet valve; a gas outlet line having an outlet valve; a gas flow controller arranged to control the flow through the inlet valve; an orifice contained within at least one of the gas outlet line, the outlet valve, a chemical ampoule outlet valve, or outlet isolation valve; a chemical ampoule fluidly coupled to at least one of the gas inlet line and the gas outlet line; and a processing chamber. In some embodiments, the apparatus further includes a check valve, one or more orifices, and/or a heated divert line.Type: GrantFiled: September 10, 2018Date of Patent: March 16, 2021Assignee: Applied Materials, Inc.Inventors: Adib Khan, Qiwei Liang, Srinivas D. Nemani, Tobin Kaufman-Osborn
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Publication number: 20210074505Abstract: In one example, a chamber inlet assembly includes a chamber inlet, an outer coupling for a delivery line, and an inner coupling for a processing region of a processing chamber. The inner coupling and the outer coupling are on inner and outer ends, respectively, of the chamber inlet, wherein a cross-sectional area of the inner coupling is larger than a cross-sectional area of the outer coupling. The chamber inlet assembly also includes a longitudinal profile including the inner and outer ends and a first side and a second side, the first and second sides being on opposite sides of the chamber inlet, wherein a shape of the longitudinal profile comprises at least one of triangular, modified triangular, trapezoidal, modified trapezoidal, rectangular, modified rectangular, rhomboidal, and modified rhomboidal. The chamber inlet assembly also includes cassette including the chamber inlet and configured to set into a side wall of the processing chamber.Type: ApplicationFiled: November 23, 2020Publication date: March 11, 2021Inventors: Eric Kihara SHONO, Vishwas Kumar PANDEY, Christopher S. OLSEN, Hansel LO, Agus Sofian TJANDRA, Taewan KIM, Tobin KAUFMAN-OSBORN
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Publication number: 20200402792Abstract: Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.Type: ApplicationFiled: September 8, 2020Publication date: December 24, 2020Inventors: Chang Ke, Lei Zhou, Biao Liu, Cheng Pan, Yuanhong Guo, Liqi Wu, Michael S. Jackson, Ludovic Godet, Tobin Kaufman-Osborn, Erica Chen, Paul F. Ma
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Patent number: 10847337Abstract: In one example, a chamber inlet assembly includes a chamber inlet, an outer coupling for a delivery line, and an inner coupling for a processing region of a processing chamber. The inner coupling and the outer coupling are on inner and outer ends, respectively, of the chamber inlet, wherein a cross-sectional area of the inner coupling is larger than a cross-sectional area of the outer coupling. The chamber inlet assembly also includes a longitudinal profile including the inner and outer ends and a first side and a second side, the first and second sides being on opposite sides of the chamber inlet, wherein a shape of the longitudinal profile comprises at least one of triangular, modified triangular, trapezoidal, modified trapezoidal, rectangular, modified rectangular, rhomboidal, and modified rhomboidal. The chamber inlet assembly also includes cassette including the chamber inlet and configured to set into a side wall of the processing chamber.Type: GrantFiled: January 15, 2019Date of Patent: November 24, 2020Assignee: APPLIED MATERIALS, INC.Inventors: Eric Kihara Shono, Vishwas Kumar Pandey, Christopher S. Olsen, Hansel Lo, Agus Sofian Tjandra, Taewan Kim, Tobin Kaufman-Osborn
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Patent number: 10818510Abstract: Implementations described herein generally relate to processes for the fabrication of semiconductor devices in which a self-assembled monolayer (SAM) is used to achieve selective area deposition. Methods described herein relate to alternating SAM molecule and hydroxyl moiety exposure operations which may be utilized to form SAM layers suitable for blocking deposition of subsequently deposited materials.Type: GrantFiled: January 28, 2019Date of Patent: October 27, 2020Assignee: Applied Materials, Inc.Inventors: Tobin Kaufman-Osborn, Keith Tatseun Wong
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Patent number: 10770292Abstract: Methods of depositing a film selectively onto a first material relative to a second material are described. The substrate is pre-cleaned by heating the substrate to a first temperature, cleaning contaminants from the substrate and activating the first surface to promote formation of a self-assembled monolayer (SAM) on the first material. A SAM is formed on the first material by repeated cycles of SAM molecule exposure, heating and reactivation of the first material. A final exposure to the SAM molecules is performed prior to selectively depositing a film on the second material. Apparatus to perform the selective deposition are also described.Type: GrantFiled: June 14, 2018Date of Patent: September 8, 2020Assignee: Applied Materials, Inc.Inventors: Chang Ke, Lei Zhou, Biao Liu, Cheng Pan, Yuanhong Guo, Liqi Wu, Michael S. Jackson, Ludovic Godet, Tobin Kaufman-Osborn, Erica Chen, Paul F. Ma
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Publication number: 20200240014Abstract: A gas injector for processing a substrate includes a body having an inlet connectable to a gas source that is configured to provide a gas flow in a first direction into the inlet when processing a substrate on a substrate support disposed within a processing volume of a processing chamber, and an a gas injection channel formed in the body. The gas injection channel is in fluid communication with the inlet and configured to deliver the gas flow to an inlet of the processing chamber. The gas injection channel has a first interior surface and a second interior surface that are parallel to a second direction and a third direction. The second and third directions do not intersect a center of the substrate, and are at an angle to the first direction towards a first edge of the substrate support.Type: ApplicationFiled: January 29, 2020Publication date: July 30, 2020Inventors: Eric Kihara Shono, Vishwas Kumar Pandey, Christopher S. Olsen, Kartik Shah, Hansel Lo, Tobin Kaufman-Osborn, Rene George, Lara Hawrylchak, Erika Hansen
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Publication number: 20200199748Abstract: The present disclosure generally provides methods of providing at least metastable radical molecular species and/or radical atomic species to a processing volume of a process chamber during an electronic device fabrication process, and apparatus related thereto. In one embodiment, the apparatus is a gas injection assembly disposed between a remote plasma source and a process chamber. The gas injection assembly includes a body, a dielectric liner disposed in the body that defines a gas mixing volume, a first flange to couple the gas injection assembly to a process chamber, and a second flange to couple the gas injection assembly to the remote plasma source. The gas injection assembly further includes one or more gas injection ports formed through the body and the liner.Type: ApplicationFiled: October 24, 2019Publication date: June 25, 2020Inventors: Vishwas Kumar PANDEY, Eric Kihara SHONO, Kartik SHAH, Christopher S. OLSEN, Agus Sofian TJANDRA, Tobin KAUFMAN-OSBORN, Taewan KIM, Hansel LO
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Patent number: 10483097Abstract: A method for in-situ dry cleaning of a SiGe semiconductor surface, ex-situ degreases the Ge containing semiconductor surface and removes organic contaminants. The surface is then dosed with HF (aq) or NH4F (g) generated via NH3+NH or NF3 with H2 or H2O to remove oxygen containing contaminants. In-situ dosing of the SiGe surface with atomic H removes carbon containing contaminants.Type: GrantFiled: September 6, 2017Date of Patent: November 19, 2019Assignee: The Regents of the University of CaliforniaInventors: Tobin Kaufman-Osborn, Andrew C. Kummel, Kiarash Kiantaj
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Publication number: 20190316256Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include exposing the substrate surfaces to a blocking compound to selectively form a blocking layer on at least a portion of the first surface over the second surface. The substrate is sequentially exposed to a metal precursor with a kinetic diameter in excess of 21 angstroms and a reactant to selectively form a metal-containing layer on the second surface over the blocking layer or the first surface. The relatively larger metal precursors of some embodiments allow for the use of blocking layers with gaps or voids without the loss of selectivity.Type: ApplicationFiled: April 12, 2019Publication date: October 17, 2019Inventors: Bhaskar Jyoti Bhuyan, Mark Saly, David Thompson, Tobin Kaufman-Osborn, Kurt Fredrickson, Thomas Knisley, Liqi Wu
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Publication number: 20190301009Abstract: Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot.Type: ApplicationFiled: June 6, 2019Publication date: October 3, 2019Inventors: Tobin KAUFMAN-OSBORN, Srinivas D. NEMANI, Ludovic GODET, Qiwei LIANG, Adib KHAN
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Patent number: 10366878Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include net chemisorption of a self-assembled monolayer on the second surface to prevent deposition of the film on the second surface.Type: GrantFiled: May 5, 2017Date of Patent: July 30, 2019Assignee: Applied Materials, Inc.Inventors: Jessica Sevanne Kachian, Tobin Kaufman-Osborn, David Thompson
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Publication number: 20190228942Abstract: In one example, a chamber inlet assembly includes a chamber inlet, an outer coupling for a delivery line, and an inner coupling for a processing region of a processing chamber. The inner coupling and the outer coupling are on inner and outer ends, respectively, of the chamber inlet, wherein a cross-sectional area of the inner coupling is larger than a cross-sectional area of the outer coupling. The chamber inlet assembly also includes a longitudinal profile including the inner and outer ends and a first side and a second side, the first and second sides being on opposite sides of the chamber inlet, wherein a shape of the longitudinal profile comprises at least one of triangular, modified triangular, trapezoidal, modified trapezoidal, rectangular, modified rectangular, rhomboidal, and modified rhomboidal. The chamber inlet assembly also includes cassette including the chamber inlet and configured to set into a side wall of the processing chamber.Type: ApplicationFiled: January 15, 2019Publication date: July 25, 2019Inventors: Eric Kihara SHONO, Vishwas Kumar PANDEY, Christopher S. OLSEN, Hansel LO, Agus Sofian TJANDRA, Taewan KIM, Tobin KAUFMAN-OSBORN
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Patent number: 10358715Abstract: Embodiments described herein relate to apparatus and methods for processing a substrate. In one embodiment, a cluster tool apparatus is provided having a transfer chamber and a pre-clean chamber, a self-assembled monolayer (SAM) deposition chamber, an atomic layer deposition (ALD) chamber, and a post-processing chamber disposed about the transfer chamber. A substrate may be processed by the cluster tool and transferred between the pre-clean chamber, the SAM deposition chamber, the ALD chamber, and the post-processing chamber. Transfer of the substrate between each of the chambers may be facilitated by the transfer chamber which houses a transfer robot.Type: GrantFiled: June 3, 2016Date of Patent: July 23, 2019Assignee: APPLIED MATERIALS, INC.Inventors: Tobin Kaufman-Osborn, Srinivas D. Nemani, Ludovic Godet, Qiwei Liang, Adib Khan
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Publication number: 20190157101Abstract: Implementations described herein generally relate to processes for the fabrication of semiconductor devices in which a self-assembled monolayer (SAM) is used to achieve selective area deposition. Methods described herein relate to alternating SAM molecule and hydroxyl moiety exposure operations which may be utilized to form SAM layers suitable for blocking deposition of subsequently deposited materials.Type: ApplicationFiled: January 28, 2019Publication date: May 23, 2019Inventors: Tobin KAUFMAN-OSBORN, Keith Tatseun WONG
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Publication number: 20190119813Abstract: A method and apparatus for delivering gases to a semiconductor processing system are provided. In some embodiments, the apparatus includes a gas inlet line having an inlet valve; a gas outlet line having an outlet valve; a gas flow controller arranged to control the flow through the inlet valve; an orifice contained within at least one of the gas outlet line, the outlet valve, a chemical ampoule outlet valve, or outlet isolation valve; a chemical ampoule fluidly coupled to at least one of the gas inlet line and the gas outlet line; and a processing chamber. In some embodiments, the apparatus further includes a check valve, one or more orifices, and/or a heated divert line.Type: ApplicationFiled: September 10, 2018Publication date: April 25, 2019Inventors: Adib KHAN, Qiwei LIANG, Srinivas D. NEMANI, Tobin KAUFMAN-OSBORN
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Patent number: D924825Type: GrantFiled: January 24, 2018Date of Patent: July 13, 2021Assignee: Applied Materials, Inc.Inventors: Eric Kihara Shono, Vishwas Kumar Pandey, Christopher S. Olsen, Hansel Lo, Agus Sofian Tjandra, Taewan Kim, Tobin Kaufman-Osborn