Patents by Inventor Todd A. Dobson

Todd A. Dobson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus and methods for selective removal of material from wafer alignment marks
    Patent number: 8053371
    Abstract: A process and apparatus for locally removing any material, such as a refractory metal, in particular tungsten, from any desired area of a wafer, such as an alignment mark area of a silicon wafer in process during the formation of integrated circuits thereon.
    Type: Grant
    Filed: February 26, 2007
    Date of Patent: November 8, 2011
    Assignee: Micron Technology, Inc.
    Inventors: Russell C. Zahorik, Guy F. Hudson, Hugh E. Stroupe, Todd A. Dobson, Brian F. Gordon
  • Methods for selective removal of material from wafer alignment marks
    Publication number: 20070207613
    Abstract: A process and apparatus for locally removing any material, such as a refractory metal, in particular tungsten, from any desired area of a wafer, such as an alignment mark area of a silicon wafer in process during the formation of integrated circuits thereon.
    Type: Application
    Filed: February 26, 2007
    Publication date: September 6, 2007
    Inventors: Russell Zahorik, Guy Hudson, Hugh Stroupe, Todd Dobson, Brian Gordon
  • Methods for selective removal of material from wafer alignment marks
    Patent number: 7244681
    Abstract: A process and apparatus for locally removing any material, such as a refractory metal, in particular tungsten, from any desired area of a wafer, such as an alignment mark area of a silicon wafer in process during the formation of integrated circuits thereon.
    Type: Grant
    Filed: August 25, 2003
    Date of Patent: July 17, 2007
    Assignee: Micron Technology, Inc.
    Inventors: Renee Zahorik, legal representative, Guy F. Hudson, Hugh E. Stroupe, Todd A. Dobson, Brian F. Gordon, Russell C. Zahorik, deceased
  • Apparatus for selective removal of material from wafer alignment marks
    Patent number: 6889698
    Abstract: A process and apparatus for locally removing any material, such as a refractory metal, in particular tungsten, from any desired area of a wafer, such as an alignment mark area of a silicon wafer in process during the formation of integrated circuits thereon.
    Type: Grant
    Filed: February 14, 2003
    Date of Patent: May 10, 2005
    Assignee: Micron Technology, Inc.
    Inventors: Russell C. Zahorik, Guy F. Hudson, Hugh E. Stroupe, Todd A. Dobson, Brian F. Gordon
  • Methods for selective removal of material from wafer alignment marks
    Publication number: 20040038543
    Abstract: A process and apparatus for locally removing any material, such as a refractory metal, in particular tungsten, from any desired area of a wafer, such as an alignment mark area of a silicon wafer in process during the formation of integrated circuits thereon.
    Type: Application
    Filed: August 25, 2003
    Publication date: February 26, 2004
    Inventors: Russell C. Zahorik, Guy F. Hudson, Hugh E. Stroupe, Todd A. Dobson, Brian F. Gordon, Renee Zahorik
  • Methods for selective removal of material from wafer alignment marks
    Patent number: 6610610
    Abstract: A process and apparatus for locally removing any material, such as a refractory metal, in particular tungsten, from any desired area of a wafer, such as an alignment mark area of a silicon wafer in process during the formation of integrated circuits thereon.
    Type: Grant
    Filed: August 30, 2001
    Date of Patent: August 26, 2003
    Assignee: Micron Technology, Inc.
    Inventors: Russell C. Zahorik, Guy F. Hudson, Hugh E. Stroupe, Todd A. Dobson, Brian F. Gordon
  • Apparatus for selective removal of material from wafer alignment marks
    Publication number: 20030121538
    Abstract: A process and apparatus for locally removing any material, such as a refractory metal, in particular tungsten, from any desired area of a wafer, such as an alignment mark area of a silicon wafer in process during the formation of integrated circuits thereon.
    Type: Application
    Filed: February 14, 2003
    Publication date: July 3, 2003
    Inventors: Russell C. Zahorik, Guy F. Hudson, Hugh E. Stroupe, Todd A. Dobson, Brian F. Gordon
  • Apparatus for selective removal of material from wafer alignment marks
    Patent number: 6530113
    Abstract: A process and apparatus for locally removing any material, such as a refractory metal, in particular tungsten, from any desired area of a wafer, such as an alignment mark area of a silicon wafer in process during the formation of integrated circuits thereon.
    Type: Grant
    Filed: May 24, 2002
    Date of Patent: March 11, 2003
    Assignee: Micron Technology, Inc.
    Inventors: Russell C. Zahorik, Guy F. Hudson, Hugh E. Stroupe, Todd A. Dobson, Brian F. Gordon
  • Method and apparatus for selective removal of material from wafer alignment marks
    Publication number: 20020144720
    Abstract: A process and apparatus for locally removing any material, such as a refractory metal, in particular tungsten, from any desired area of a wafer, such as an alignment mark area of a silicon wafer in process during the formation of integrated circuits thereon.
    Type: Application
    Filed: May 24, 2002
    Publication date: October 10, 2002
    Inventors: Russell C. Zahorik, Guy F. Hudson, Hugh E. Stroupe, Todd A. Dobson, Brian F. Gordon, Renee Zahorik
  • Method and apparatus for selective removal of material from wafer alignment marks
    Patent number: 6447634
    Abstract: A process and apparatus for locally removing any material, such as a refractory metal, in particular tungsten, from any desired area of a wafer, such as an alignment mark area of a silicon wafer in process during the formation of integrated circuits thereon. The process comprising the steps of aligning said area of said wafer, such as an alignment mark on the wafer, to an etchant dispensing apparatus, placing the surface of the wafer adjacent at least a portion of an annular portion of the etchant dispensing apparatus, dispensing at least one etchant onto said area of said wafer, such as an alignment mark, and removing the at least one etching from the wafer.
    Type: Grant
    Filed: May 9, 2000
    Date of Patent: September 10, 2002
    Assignee: Micron Technology, Inc.
    Inventors: Russell C. Zahorik, Guy F. Hudson, Hugh F. Stroupe, Todd A. Dobson, Brian F. Gordon
  • Method and apparatus for selective removal of material from wafer alignment marks
    Publication number: 20020025687
    Abstract: A process and apparatus for locally removing any material, such as a refractory metal, in particular tungsten, from any desired area of a wafer, such as an alignment mark area of a silicon wafer in process during the formation of integrated circuits thereon.
    Type: Application
    Filed: August 30, 2001
    Publication date: February 28, 2002
    Inventors: Russell C. Zahorik, Guy F. Hudson, Hugh E. Stroupe, Todd A. Dobson, Brian F. Gordon
  • Method and apparatus for selective removal of material from wafer alignment marks
    Patent number: 6329301
    Abstract: A process and apparatus for locally removing any material, such as a refractory metal, in particular tungsten, from any desired area of a wafer, such as an alignment mark area of a silicon wafer in process during the formation of integrated circuits thereon. The process comprising the steps of aligning said area of said wafer, such as an alignment mark on the wafer, to an etchant dispensing apparatus, placing the surface of the wafer adjacent at least a portion of an annular portion of the etchant dispensing apparatus, dispensing at least one etchant onto said area of said wafer, such as an alignment mark, and removing the at least one etching from the wafer.
    Type: Grant
    Filed: August 14, 2000
    Date of Patent: December 11, 2001
    Assignee: Micron Technology, Inc.
    Inventors: Russell C. Zahorik, Guy F. Hudson, Hugh E. Stroupe, Todd A. Dobson, Brian F. Gordon
  • Method and apparatus for selective removal of material from wafer alignment marks
    Patent number: 6103636
    Abstract: A process and apparatus for locally removing any material, such as a refractory metal, in particular tungsten, from any desired area of a wafer, such as an alignment mark area of a silicon wafer in process during the formation of integrated circuits thereon. The process comprising the steps of aligning said area of said wafer, such as an alignment mark on the wafer, to an etchant dispensing apparatus, placing the surface of the wafer adjacent at least a portion of an annular portion of the etchant dispensing apparatus, dispensing at least one etchant onto said area of said wafer, such as an alignment mark, and removing the at least one etching from the wafer.
    Type: Grant
    Filed: August 20, 1997
    Date of Patent: August 15, 2000
    Assignee: Micron Technology, Inc.
    Inventors: Russell C. Zahorik, deceased, Guy F. Hudson, Hugh E. Stroupe, Todd A. Dobson, Brian F. Gordon