Abstract: Wafer carriers and methods for moving wafers in a reactor. The wafer carrier may include a platen with a plurality of compartments and a plurality of wafer platforms. The platen is configured to rotate about a first axis. Each of the wafer platforms is associated with one of the compartments and is configured to rotate about a respective second axis relative to the respective compartment. The platen and the wafer platforms rotate with different angular velocities to create planetary motion therebetween. The method may include rotating a platen about a first axis of rotation. The method further includes rotating each of a plurality of wafer platforms carried on the platen and carrying the wafers about a respective second axis of rotation and with a different angular velocity than the platen to create planetary motion therebetween.

Abstract: Apparatus and methods for improving the control of the temperature of a supported member, such as a substrate, in high vacuum processing systems, such as ion beam etch (IBE) systems. The apparatus includes thermoelectric devices that transfer heat from a support member supporting the supported member to a liquid-cooled heat exchange member to regulate the temperature of the support member. The method includes cooling the support member with thermoelectric devices that transfer the heat to the liquid-cooled heat exchange member.

Abstract: A method for producing magneto resistive heads includes the steps of positioning at least two magneto resistive elements in spaced relation to one another and placing the at least two magneto resistive elements in an ion milling environment where material is removed nonselectively from items in the environment. A property of at least two of the plurality of magneto resistive elements is monitored. In response to monitoring, one of the at least two magneto resistive elements is dynamically covered to prevent additional removal of material from the covered magneto resistive element.

Abstract: A method for producing magneto resistive heads includes the steps of positioning at least two magneto resistive elements in spaced relation to one another and placing the at least two magneto resistive elements in an ion milling environment where material is removed nonselectively from items in the environment. A property of at least two of the plurality of magneto resistive elements is monitored. In response to monitoring, one of the at least two magneto resistive elements is dynamically covered to prevent additional removal of material from the covered magneto resistive element.