Abstract: Improvements in a variable volume capture device are disclosed to capture a variable amount of sample. The variable amount is controlled by a linear actuator that produces a variable and adjustable stroke length that capture the programmed amount of fluid in the syringe barrel. Air or other supernatant fluid can be separated and expelled at this point. The captured fluid is then dispensed out of the syringe barrel for further testing and analysis. The capture device is then able to drain or flush the sample. Valves located on each side of the syringe barrel allow for sample collecting, dispensing and draining to ensure that the capture device is free to collect new samples. The variable volume capture device can have changeable syringe and barrel diameters and lengths to accommodate larger or smaller ranges of samples.

Abstract: Improvements in a variable volume capture device are disclosed to capture a variable amount of sample. The variable amount is controlled by a linear actuator that produces a variable and adjustable stroke length that capture the programmed amount of fluid in the syringe barrel. Air or other supernatant fluid can be separated and expelled at this point. The captured fluid is then dispensed out of the syringe barrel for further testing and analysis. The capture device is then able to drain or flush the sample. Valves located on each side of the syringe barrel allow for sample collecting, dispensing and draining to ensure that the capture device is free to collect new samples. The variable volume capture device can have changeable syringe and barrel diameters and lengths to accommodate larger or smaller ranges of samples.

Abstract: A semiconductor wafer electroless plating apparatus includes a platen and a fluid bowl. The platen has a top surface defined to support a wafer, and an outer surface extending downward from a periphery of the top surface to a lower surface of the platen. The fluid bowl has an inner volume defined by an interior surface so as to receive the platen, and wafer to be supported thereon, within the inner volume. A seal is disposed around the interior surface of the fluid bowl so as to form a liquid tight barrier when engaged between the interior surface of the fluid bowl and the outer surface of the platen. A number of fluid dispense nozzles are positioned to dispense electroplating solution within the fluid bowl above the seal so as to rise up and flow over the platen, thereby flowing over the wafer when present on the platen.

Abstract: A chemical fluid handling system is defined to supply a number of chemicals to a number of fluid inputs of a mixing manifold. The chemical fluid handling system includes a number of fluid recirculation loops for separately pre-conditioning and controlling the supply of each of the number of chemicals. Each of the fluid recirculation loops is defined to degas, heat, and filter a particular one of the number of chemical components. The mixing manifold is defined to mix the number of chemicals to form the electroless plating solution. The mixing manifold includes a fluid output connected to a supply line. The supply line is connected to supply the electroless plating solution to a fluid bowl within an electroless plating chamber.

Abstract: A semiconductor wafer electroless plating apparatus includes a platen and a fluid bowl. The platen has a top surface defined to support a wafer, and an outer surface extending downward from a periphery of the top surface to a lower surface of the platen. The fluid bowl has an inner volume defined by an interior surface so as to receive the platen, and wafer to be supported thereon, within the inner volume. A seal is disposed around the interior surface of the fluid bowl so as to form a liquid tight barrier when engaged between the interior surface of the fluid bowl and the outer surface of the platen. A number of fluid dispense nozzles are positioned to dispense electroplating solution within the fluid bowl above the seal so as to rise up and flow over the platen, thereby flowing over the wafer when present on the platen.

Abstract: A semiconductor wafer electroless plating apparatus includes a platen and a fluid bowl. The platen has a top surface defined to support a wafer, and an outer surface extending downward from a periphery of the top surface to a lower surface of the platen. The fluid bowl has an inner volume defined by an interior surface so as to receive the platen, and wafer to be supported thereon, within the inner volume. A seal is disposed around the interior surface of the fluid bowl so as to form a liquid tight barrier when engaged between the interior surface of the fluid bowl and the outer surface of the platen. A number of fluid dispense nozzles are positioned to dispense electroplating solution within the fluid bowl above the seal so as to rise up and flow over the platen, thereby flowing over the wafer when present on the platen.

Abstract: A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an electroless plating apparatus that implements a wafer submersion by fluid upwelling method. The upper and lower zones of the system are enclosed by a dual-walled chamber, wherein the inner wall is a chemically inert plastic and the outer wall is a structural metal. The system interfaces with a fluid handling system which provides the necessary chemistry supply and control for the system. The system is ambient controlled. Also, the system interfaces with an ambient controlled managed transfer module (MTM).

Abstract: A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an electroless plating apparatus that implements a wafer submersion by fluid upwelling method. The upper and lower zones of the system are enclosed by a dual-walled chamber, wherein the inner wall is a chemically inert plastic and the outer wall is a structural metal. The system interfaces with a fluid handling system which provides the necessary chemistry supply and control for the system. The system is ambient controlled. Also, the system interfaces with an ambient controlled managed transfer module (MTM).

Abstract: A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an electroless plating apparatus that implements a wafer submersion by fluid upwelling method. The upper and lower zones of the system are enclosed by a dual-walled chamber, wherein the inner wall is a chemically inert plastic and the outer wall is a structural metal. The system interfaces with a fluid handling system which provides the necessary chemistry supply and control for the system. The system is ambient controlled. Also, the system interfaces with an ambient controlled managed transfer module (MTM).

Abstract: A semiconductor wafer electroless plating apparatus includes a platen and a fluid bowl. The platen has a top surface defined to support a wafer, and an outer surface extending downward from a periphery of the top surface to a lower surface of the platen. The fluid bowl has an inner volume defined by an interior surface so as to receive the platen, and wafer to be supported thereon, within the inner volume. A seal is disposed around the interior surface of the fluid bowl so as to form a liquid tight barrier when engaged between the interior surface of the fluid bowl and the outer surface of the platen. A number of fluid dispense nozzles are positioned to dispense electroplating solution within the fluid bowl above the seal so as to rise up and flow over the platen, thereby flowing over the wafer when present on the platen.

Abstract: A chemical fluid handling system is defined to supply a number of chemicals to a number of fluid inputs of a mixing manifold. The chemical fluid handling system includes a number of fluid recirculation loops for separately pre-conditioning and controlling the supply of each of the number of chemicals. Each of the fluid recirculation loops is defined to degas, heat, and filter a particular one of the number of chemical components. The mixing manifold is defined to mix the number of chemicals to form the electroless plating solution. The mixing manifold includes a fluid output connected to a supply line. The supply line is connected to supply the electroless plating solution to a fluid bowl within an electroless plating chamber.

Abstract: A dry-in/dry-out system is disclosed for wafer electroless plating. The system includes an upper zone for wafer ingress/egress and drying operations. Proximity heads are provided in the upper zone to perform the drying operations. The system also includes a lower zone for electroless plating operations. The lower zone includes an electroless plating apparatus that implements a wafer submersion by fluid upwelling method. The upper and lower zones of the system are enclosed by a dual-walled chamber, wherein the inner wall is a chemically inert plastic and the outer wall is a structural metal. The system interfaces with a fluid handling system which provides the necessary chemistry supply and control for the system. The system is ambient controlled. Also, the system interfaces with an ambient controlled managed transfer module (MTM).

Abstract: A method and apparatus for analyzing plating solutions. The apparatus generally includes a plating cell, a reference electrolyte input, one or more external additive pumps, and a process controller. In one embodiment, the plating cell includes a cavity therein having a larger volumetric portion adjacent a smaller volumetric portion adapted to hold one or more solutions therein. The plating cell also includes a base disposed adjacent the bottom of the plating cell and adapted to receive and mix one or more test solutions as part of the plating solution analysis. In one configuration, the base includes electrical ports adapted to connect stimulation signals to a working electrode, counter electrode, and reference electrode disposed within the cell. The base also includes a thermal sensor in thermal contact with test solutions contained within the vessel.

Abstract: A method and apparatus for automatically refilling reference electrodes used in chemical analysis. The apparatus generally includes a reference electrode including an outer chamber with an electrolyte contained therein, an adapter to secure the plumbing to the reference electrode, and a computer to control the refill unit. The refill unit further includes a pump, a refill bottle, and plumbing to connect the refill bottle to the pump and the pump to the reference electrode. The method generally includes drawing refill electrolyte from a refill bottle and pumping the refill electrolyte to the reference electrode. Embodiments of the invention further include an automatically refillable reference electrode.

Abstract: Embodiments of the invention generally provide an electrochemical processing system configured to provide selected amounts of electrolyte composition components for single plating process. The selected amounts of components to be added to an electrolyte composition may be achieved by a volume measurement device using an ultrasonic sensor to measure volume of a vessel.

Abstract: A method and apparatus for automatically refilling reference electrodes used in chemical analysis. The apparatus generally includes a reference electrode including an outer chamber with an electrolyte contained therein, an adapter to secure the plumbing to the reference electrode, and a computer to control the refill unit. The refill unit further includes a pump, a refill bottle, and plumbing to connect the refill bottle to the pump and the pump to the reference electrode. The method generally includes drawing refill electrolyte from a refill bottle and pumping the refill electrolyte to the reference electrode. Embodiments of the invention further include an automatically refillable reference electrode.

Abstract: A method for forming a low k dielectric constant material over a substrate. According to one embodiment, the method includes combining, in a mixing apparatus fluidly coupled to a solution applicator, an organo silicate glass (OSG) precursor, a solvent and a surfactant with water and an acid catalyst to form a coating solution; aging the coating solution in the mixing apparatus to form an aged coating solution; transporting the aged coating solution to the solution applicator; and then applying the aged coating solution to the substrate with the applicator.

Abstract: To maintain the actual milling rate of a chemical milling solution within a predetermined range, an automated chemical milling controller periodically measures the actual milling rate within the milling tank, senses the actual temperature of the milling solution, and calculates the normalized milling rate and desired amounts of feedstocks necessary to maintain the milling rate within a predetermined range. The controller automatically adds the desired amounts of feedstocks to a milling solution.

Abstract: A syringe which has a barrel, an annular elongate liner that is constrained by the barrel and a plunger head. The liner and the plunger head are made of a fluorinated polymer material, such as Teflon. The plunger head has first and second sealing surfaces and a portion of reduced diameter between them. The first sealing surface provides a fluid seal whereby fluid is drawn into and forced out of the syringe. The second sealing surface forms a particle trap with the inner bore of the liner to keep any fluorinated polymer particles from escaping from the portion of reduced diameter between the first and second sealing surfaces.