Patents by Inventor Todd Christopher Bailey

Todd Christopher Bailey has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Structure resulting from chemical shrink process over BARC (bottom anti-reflective coating)
    Patent number: 8491984
    Abstract: A structure. The structure includes: a hole layer; a hole layer including a top hole layer surface, wherein the hole layer has a thickness in a first direction that is perpendicular to the hole layer surface; a bottom antireflective coating (BARC) layer on and in direct physical contact with the hole layer at the top hole layer surface; a photoresist layer on and in direct physical contact with the BARC layer, wherein a continuous hole in the first direction extends completely through the photoresist layer, the BARC layer, and the hole layer; and a polymerized hole shrinking region in direct physical contact with the photoresist layer at a lateral surface of the photoresist layer and with the hole layer at the top hole layer surface, wherein the hole shrinking region does not extend below the hole layer surface in a direction from the BARC layer to the hole layer.
    Type: Grant
    Filed: December 6, 2011
    Date of Patent: July 23, 2013
    Assignee: International Business Machines Corporation
    Inventors: Todd Christopher Bailey, Colin J. Brodsky, Allen H. Gabor
  • STRUCTURE RESULTING FROM CHEMICAL SHRINK PROCESS OVER BARC (BOTTOM ANTI-REFLECTIVE COATING)
    Publication number: 20120076982
    Abstract: A structure. The structure includes: a hole layer; a hole layer including a top hole layer surface, wherein the hole layer has a thickness in a first direction that is perpendicular to the hole layer surface; a bottom antireflective coating (BARC) layer on and in direct physical contact with the hole layer at the top hole layer surface; a photoresist layer on and in direct physical contact with the BARC layer, wherein a continuous hole in the first direction extends completely through the photoresist layer, the BARC layer, and the hole layer; and a polymerized hole shrinking region in direct physical contact with the photoresist layer at a lateral surface of the photoresist layer and with the hole layer at the top hole layer surface, wherein the hole shrinking region does not extend below the hole layer surface in a direction from the BARC layer to the hole layer.
    Type: Application
    Filed: December 6, 2011
    Publication date: March 29, 2012
    Applicant: International Business Machines Corporation
    Inventors: Todd Christopher Bailey, Colin J. Brodsky, Allen H. Gabor
  • Method for performing chemical shrink process over BARC (bottom anti-reflective coating)
    Patent number: 8110496
    Abstract: A structure and a method for forming the same. The method comprises providing a structure including (a) a hole layer, (b) a BARC (bottom antireflective coating) layer on the top of the hole layer, and (c) a patterned photoresist layer on top of the BARC layer and having a photoresist hole; etching the BARC layer through the photoresist hole to extend the photoresist hole to the hole layer; performing the chemical shrinking process to shrink the extended photoresist hole; and etching the hole layer through the shrunk, extended photoresist hole so as to form a hole in the hole layer.
    Type: Grant
    Filed: July 31, 2007
    Date of Patent: February 7, 2012
    Assignee: International Business Machines Corporation
    Inventors: Todd Christopher Bailey, Colin J. Brodsky, Allen H. Gabor
  • Method for performing chemical shrink process over BARC (bottom anti-reflective coating)
    Patent number: 7288478
    Abstract: A structure and a method for forming the same. The method comprises providing a structure including (a) a hole layer, (b) a BARC (bottom antireflective coating) layer on the top of the hole layer, and (c) a patterned photoresist layer on top of the BARC layer and having a photoresist hole; etching the BARC layer through the photoresist hole to extend the photoresist hole to the hole layer; performing the chemical shrinking process to shrink the extended photoresist hole; and etching the hole layer through the shrunk, extended photoresist hole so as to form a hole in the hole layer.
    Type: Grant
    Filed: July 5, 2005
    Date of Patent: October 30, 2007
    Assignee: International Business Machines Corporation
    Inventors: Todd Christopher Bailey, Colin J. Brodsky, Allen H. Gabor