Abstract: A broadside coupled coplanar inductor device includes first and second coplanar inductors in which the conductors of the first and second coplanar inductors are broadside coupled. The conductors are located one above the other at a first distance and the return paths are located to the side of the respective first and second conductor signal paths at a second distance. One or both of the dimensions of the first and second first distances is defined so as to maximize a mutual inductance between the conductors. First and second driver circuit apply voltages across each conductor. The input pulse width modulation signals applied to the first and second driver circuits are 180 degrees out of phase.

Abstract: An assembled circuit board has a topology that defines positions, dimensions and power dissipation of components mounted to the circuit board, including a high power component and one or more low power components. A cold plate makes thermal contact to the high power component through a thermal interface material. A thermally conductive sheet overlays the circuit board and is formed to match the topology of the low power component or components. The sheet has a first portion that makes thermal contact with the cold plate and a second portion that overlays the low power component or components. The cold plate removes heat directly from the high power component and indirectly through the thermally conductive sheet from the low power component or components. The thermally conductive sheet conforms to the topology of the low power components either by preforming or by flexibility.

Abstract: A single device having both thermal and alignment features is provided to mechanically align and more efficiently cool multiple heat generating components. The device includes one or more thermal structures and assembly alignment features, in which the one or more thermal structures make thermal contact with a plurality of heat generating components. The assembly alignment features control the positions of the heat generating components during assembly of the heat generating components onto a common substrate.

Abstract: A cold plate structure, wherein a thermally active region includes fins metal injection molded in a single piece with a fin base sufficiently thin so that the active region mechanically conforms to the heat generating device that the cold plate cools. The fin base is formed as a common structure with a bottom wall of the cold plate, reducing thermal resistance between the device and the fins and also enhancing mechanical flexibility. Another cold plate structure can include multiple thermally active regions, with flexible outer walls and a reduced thickness between active regions, allowing for position variation between multiple heat generation devices that are cooled by the common cold plate. A common base having multiple physically separate active regions can be metal injection molded in a single step, or bases of multiple active regions can be formed individually and joined later to form a common single cold plate structure.

Abstract: Voltage on the output terminal of an inductor is obtained as a first input signal to a control block (CB); the inductor has an input terminal connected to a power switch and driver block at a switching node. A sense input voltage is obtained on an output terminal of a sensing circuit that is not directly connected to the switching node, as a second input signal to the CB. A voltage is generated on a first output terminal of the CB and is selected such that the CB can use its first and second input signals to infer the current through the inductor. A pulse width modulation (PWM) signal is generated on a second output terminal of the CB, based on the inferred current through the inductor; the second output signal from the CB is provided to a PWM input terminal of the power switch and driver block.

Abstract: An method for forming a cooling apparatus for cooling an electronic component. The apparatus has a planar top member of a thermal energy conductive material and a parallel planar bottom member of the material, the planar bottom member including a surface having regions configured for heat exchange contact with the electronic component. The planar top member has a plurality of stamped indent formations at a plurality of locations, each indent formation providing a contact surface such that the planar top member is affixed to the bottom member by braze or solder at each contact surface. Alternatively, the planar bottom member also has a plurality of stamped indent formations in alignment with indent formations of the top member. The planar top member is affixed to the bottom member by brazing or soldering each respective contact surface of an indent formation of the planar top member to an opposing contact surface of a corresponding indent formation of the parallel planar bottom member.

Abstract: A multi-phase buck switching converter having grouped pairs of phases, each phase using two magnetically coupled air-core inductors. For each group, a first driver circuit controlling switching of a first power transistor switching circuit coupled to a first air-core inductor output for driving an output load at the first phase. A second driver circuit controlling switching of a second power transistor switching circuit coupled to a second air-core inductor output for driving said output load at the second phase. The first and second phases are spaced 180° apart. The coupled air-core inductors per group of such orientation, separation distance and mutual inductance polarity relative to each other such that magnetic coupling between the two or more inductors at each phase results in a net increase in effective inductance per unit volume. Each air-core inductor is a metal slab of defined length, height and thickness formed using back-end-of-line semiconductor manufacturing process.

Abstract: An apparatus includes a top wall and a bottom wall. The top wall and the bottom wall define and enclose a first fin area; a second fin area; and a flex region joining the first fin area to the second fin area. The flex region is connected in fluid communication with the interior of the first fin area and the interior of the second fin area. The flex region is bent or twisted at a nonzero angle around at least one axis relative to the broadest surfaces of the first and second fin areas.

Abstract: A printed circuit board (PCB) structure and mounting assembly for joining two PCBs. A first PCB has a top and bottom surface faces and a peripheral end face separating the top and bottom surface. The first PCB has one or more conductive wire ends exposed at a surface of the peripheral end face; the exposed conductive wire ends forming multiple separate electrical contacts across the thickness and length of the PEF surface. A second PCB has a top surface face and one or more conductive pads exposed at the top surface at locations corresponding to locations of the multiple electrical contacts. A surface mount solder material is disposed on one or more exposed conductive pads for electrically connecting with corresponding the multiple electrical contacts. The disposed solder material stably joins the PEF surface of the first PCB to the top surface of the second PCB in a relative perpendicular orientation.

Abstract: One silicon MOSFET transistor, which is used as the VThreshold control, and a GaN power HEMT are integrated on a single die to enable a fully integrated depletion-mode power device. GaN area is created on a silicon substrate and GaN FETs are built in the GaN area. Outside of the GaN area, silicon transistors such as switch MOSFETs are built. Front end of line or back end of line metal connections are then made to create interconnections among the GaN FET and the silicon transistor. The short physical proximity of the silicon transistor and GaN HEMT significantly reduces the parasitic resistance and inductance between them. Thus, high speed signals are able to travel from the silicon transistor to the GaN HEMT with a higher frequency and lower distortion, without creating overshoot voltage when there is large parasitic inductance. Therefore, the cascode device can operate at a higher switching frequency.

Abstract: A method for fabricating a semiconductor device includes, for a substrate having a first region protected by a cap layer, forming a first device on a second region of the substrate. The substrate includes an insulator layer disposed between a first semiconductor layer and a second semiconductor layer each including a first semiconductor material. The method further includes forming a second device on the first region, including forming one or more transistors each having a channel formed from a second semiconductor material different from the first semiconductor material.

Abstract: A single device having both thermal and alignment features is provided to mechanically align and more efficiently cool multiple heat generating components. The device includes one or more thermal structures and assembly alignment features, in which the one or more thermal structures make thermal contact with a plurality of heat generating components. The assembly alignment features control the positions of the heat generating components during assembly of the heat generating components onto a common substrate.

Abstract: A broadside coupled coplanar inductor device includes first and second coplanar inductors in which the conductors of the first and second coplanar inductors are broadside coupled. The conductors are located one above the other at a first distance and the return paths are located to the side of the respective first and second conductor signal paths at a second distance. One or both of the dimensions of the first and second first distances is defined so as to maximize a mutual inductance between the conductors. First and second driver circuit apply voltages across each conductor. The input pulse width modulation signals applied to the first and second driver circuits are 180 degrees out of phase.

Abstract: An electrical connector carries large amounts of electrical current between two circuit boards with low resistance and low self-inductance by means of an interdigitated anode and cathode, thereby providing low dynamic voltage loss. The connector also may include, near where power will be consumed, an interposer board with on-board capacitance to provide even lower dynamic voltage loss. The connector has application to delivering low-voltage, high-current power from a power supply on a first board to electronics on a second board: the low resistance provides low voltage drop for a load current that is constant, while the low inductance and the capacitors provide low voltage fluctuation for a load current that changes. These issues are of great importance, for example, in designing high-performance computers.

Abstract: Voltage on the output terminal of an inductor is obtained as a first input signal to a control block (CB); the inductor has an input terminal connected to a power switch and driver block at a switching node. A sense input voltage is obtained on an output terminal of a sensing circuit that is not directly connected to the switching node, as a second input signal to the CB. A voltage is generated on a first output terminal of the CB and is selected such that the CB can use its first and second input signals to infer the current through the inductor. A pulse width modulation (PWM) signal is generated on a second output terminal of the CB, based on the inferred current through the inductor; the second output signal from the CB is provided to a PWM input terminal of the power switch and driver block.

Abstract: A cold plate structure, wherein a thermally active region includes fins metal injection molded in a single piece with a fin base sufficiently thin so that the active region mechanically conforms to the heat generating device that the cold plate cools. The fin base is formed as a common structure with a bottom wall of the cold plate, reducing thermal resistance between the device and the fins and also enhancing mechanical flexibility. Another cold plate structure can include multiple thermally active regions, with flexible outer walls and a reduced thickness between active regions, allowing for position variation between multiple heat generation devices that are cooled by the common cold plate. A common base having multiple physically separate active regions can be metal injection molded in a single step, or bases of multiple active regions can be formed individually and joined later to form a common single cold plate structure.

Abstract: An apparatus includes a top wall and a bottom wall. The top wall and the bottom wall define and enclose a first fin area; a second fin area; and a flex region joining the first fin area to the second fin area. The flex region is connected in fluid communication with the interior of the first fin area and the interior of the second fin area. The flex region is bent or twisted at a nonzero angle around at least one axis relative to the broadest surfaces of the first and second fin areas.

Abstract: One silicon MOSFET transistor, which is used as the VThreshold control, and a GaN power HEMT are integrated on a single die to enable a fully integrated depletion-mode power device. GaN area is created on a silicon substrate and GaN FETs are built in the GaN area. Outside of the GaN area, silicon transistors such as switch MOSFETs are built. Front end of line or back end of line metal connections are then made to create interconnections among the GaN FET and the silicon transistor. The short physical proximity of the silicon transistor and GaN HEMT significantly reduces the parasitic resistance and inductance between them. Thus, high speed signals are able to travel from the silicon transistor to the GaN HEMT with a higher frequency and lower distortion, without creating overshoot voltage when there is large parasitic inductance. Therefore, the cascode device can operate at a higher switching frequency.

Abstract: A cooling apparatus includes a chamber and a pressure-relief element. The chamber includes a coolant in a liquid phase disposed near a heat-generation object. The coolant in the liquid phase dissipates heat from the heat-generation object and is converted from the liquid phase to a vapor phase upon the coolant in the liquid phase reaching a boiling temperature. The pressure-relief element has a conduit. A first end of the conduit is submerged in the coolant in the liquid phase internal to the chamber and a second end of the conduit is connected to atmosphere external to the chamber.

Abstract: A structure for a network switch. The network switch may include a plurality of spine chips arranged on a plurality of spine cards, where one or more spine chips are located on each spine card; and a plurality of leaf chips arranged on a plurality of leaf cards, wherein one or more leaf chips are located on each leaf card, where each spine card is connected to every leaf chip and the plurality of spine chips are surrounded on at least two sides by leaf cards.