Patents by Inventor Todd E Wilke

Todd E Wilke has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20090301879
    Abstract: A protective coating sustains the long term performance of a solid-state hydrogen sensor that includes a catalyst layer for promoting the electrochemical dissociation of hydrogen. The catalyst is susceptible to deterioration in the presence of at least one contaminant, including carbon monoxide, hydrogen sulfide, chlorine, water and oxygen. The coating comprises at least one layer of silicon dioxide having a thickness that permits hydrogen to diffuse to the catalyst layer and that inhibits contaminant(s) from diffusing to the catalyst layer. The preferred coating further comprises at least one layer of a hydrophobic composition, preferably polytetrafluoroethylene, for inhibiting diffusion of water through the protective coating to the catalyst layer. The preferred protective coating further comprising at least one layer of alumina for inhibiting diffusion of oxygen through the protective coating to said catalyst layer.
    Type: Application
    Filed: April 6, 2009
    Publication date: December 10, 2009
    Inventors: Prabhu Soundarrajan, An T. Nguyen Le, Todd E. Wilke
  • Patent number: 7226689
    Abstract: A membrane electrode assembly may be made using a one-sided catalyst coated membrane (CCM) wherein only one catalyst layer, either the anode or the cathode, is coated directly on the ion-exchange membrane. In particular, a one-sided CCM may be used where it may not be practicable to coat both sides of the ion-exchange membrane with catalyst layers such as when PTFE is added to the anode catalyst layer to render it reversal tolerant.
    Type: Grant
    Filed: June 20, 2003
    Date of Patent: June 5, 2007
    Assignee: Ballard Power Systems Inc.
    Inventors: Siyu Ye, Paul Beattie, Todd E Wilke, Shannon R Hodgson, Kyoung Bai, Michael V Lauritzen
  • Publication number: 20040258979
    Abstract: A membrane electrode assembly may be made using a one-sided catalyst coated membrane (CCM) wherein only one catalyst layer, either the anode or the cathode, is coated directly on the ion-exchange membrane. In particular, a one-sided CCM may be used where it may not be practicable to coat both sides of the ion-exchange membrane with catalyst layers such as when PTFE is added to the anode catalyst layer to render it reversal tolerant.
    Type: Application
    Filed: June 20, 2003
    Publication date: December 23, 2004
    Applicant: Ballard Power Systems Inc.
    Inventors: Siyu Ye, Paul Beattie, Todd E. Wilke, Shannon R. Hodgson, Kyoung Bai, Michael V. Lauritzen
  • Publication number: 20040086632
    Abstract: A method for coating an ion-exchange membrane with a catalyst layer by first heating a surface of the membrane to thereby soften the surface, followed by deposition of a catalyst composition and compaction into the ion-exchange membrane to produce a catalyst-coated membrane. Heating of the ion-exchange membrane may be at a temperature between 20° C. and 50° C., typically between 30° C. and 40° C., above the glass transition temperature of the dry ion-exchange membrane. In one embodiment, the catalyst composition is fluidized in a fluidized bed reactor prior to being deposited on the membrane surface. A system for coating the ion-exchange membrane is also provided. The catalyst-coated membrane is particularly useful in electrochemical fuel cells.
    Type: Application
    Filed: October 31, 2002
    Publication date: May 6, 2004
    Applicant: Ballard Power Systems Inc.
    Inventors: Goran Vlajnic, Paul D. Beattie, Todd E. Wilke
  • Patent number: 5434093
    Abstract: A method for forming narrow length transistors by forming a trench in a first layer over a semiconductor substrate. Spacers are then formed within the trench and a gate dielectric is formed between the spacers at the bottom of the trench on the semiconductor substrate. The trench is then filled with a gate electrode material which is chemically-mechanically polished back to isolate the gate electrode material within the trench, and the first layer is removed leaving the gate dielectric, gate electrode and spacers behind.
    Type: Grant
    Filed: August 10, 1994
    Date of Patent: July 18, 1995
    Assignee: Intel Corporation
    Inventors: Robert S. Chau, Chan-Hong Chern, Shahriar S. Ahmed, Robert F. Hainsey, Robert J. Stoner, Todd E. Wilke, Leopoldo D. Yau